prindi

Analysis of peak current for current crowding effect in 4H- and 6H-SiC Schottky structures

autor
Kurel, Raido
Rang, Toomas
vastutusandmed
R.Kurel, T.Rang
allikas
The 7th Biennial Conference on Electronics and Microsystem Technology "Baltic Electronics Conference" : BEC 2000 : October 8 - 11, 2000, Tallinn, Estonia : conference proceedings
ilmumiskoht
[Tallinn]
kirjastus/väljaandja
Tallinn Technical University
ilmumisaasta
2000
leheküljed
p. 235-236 : ill
ISBN
9985-59-179-8
märkused
Bibliogr.: 5 ref
Kurel, R., Rang, T. Analysis of peak current for current crowding effect in 4H- and 6H-SiC Schottky structures // The 7th Biennial Conference on Electronics and Microsystem Technology "Baltic Electronics Conference" : BEC 2000 : October 8 - 11, 2000, Tallinn, Estonia : conference proceedings. [Tallinn] : Tallinn Technical University, 2000. p. 235-236 : ill.