Analysis of barrier inhomogeneities of P-type Al/4H-SiC Schottky barrier diodes
statement of authorship
Mehadi Hasan Ziko, Ants Koel, Toomas Rang, Jana Toompuu
source
Silicon Carbide and Related Materials 2019 : Selected peer-reviewed papers from International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan
location of publication
Zürich
publisher
year of publication
pages
p. 960-972
conference name, date
18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019
conference location
Kyoto, Japan
subject term
kvartiil
category (general)
category (sub)
keyword
ISSN
1662-9752
ISBN
9783035715798
notes
Bibliogr.: 44 ref
scientific publication
teaduspublikatsioon
classifier
TTÜ department
language
inglise
Ziko, M.H., Koel, A., Rang, T., Toompuu, J. Analysis of barrier inhomogeneities of P-type Al/4H-SiC Schottky barrier diodes // Silicon Carbide and Related Materials 2019 : Selected peer-reviewed papers from International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan, Materials science forum. Zürich : Trans Tech Publications, 2020. p. 960-972. (Materials science forum ; 1004).