Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties
author
Kropman, Daniel
Mellikov, Enn
Öpik, Andres
Lott, Kalju
Volobujeva, Olga
Kärner, T.
Heinmaa, I.
Laas, Tõnu
Medvid, A.
statement of authorship
D.Kropman, E.Mellikov, A.Öpik, K.Lott, O.Volobujeva, T.Kärner, I.Heinmaa, T.Laas, A.Medvid
source
Radiation Interaction with Materials and its use in Technologies : Kaunas, 24-27.09.2008
location of publication
Kaunas
publisher
Technologija
year of publication
2008
pages
p. 204-207
url
https://www.sciencedirect.com/science/article/pii/S0921452609010321
subject term
pinged (füüsika)
relaksatsioon (füüsika)
oksüdatsioon
räniühendid
language
inglise