Simulation of advanced super-speed BiCMOS static memory cells based on the reverse base current effect of avalanche transistors
author
Zykov, A.
statement of authorship
A.Bubennikov, A.Zykov
location of publication
[Tallinn]
year of publication
pages
p. 63-66: ill
ISBN
9985-59-081-3
notes
Bibl. 2 ref
Bubennikov, A., Zykov, A. Simulation of advanced super-speed BiCMOS static memory cells based on the reverse base current effect of avalanche transistors // BEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedings. [Tallinn], 1998. p. 63-66: ill.