Interaction of point defects with impurities in the Si-SiO2 system and its influence on the properties of the interface
statement of authorship
D.Kropman, E.Mellikov, K.Lott, T.Kärner, I.Heinmaa [et al.].
source
Getterring and defect engineering in semiconductor technology XIII : CADEST 2009 : proceedings of the XIIIth International Autumn Meeting, Döllnsee-Schorfheide, north of Berlin, Germany, September 26 - October 02, 2009
location of publication
Stafa-Zurich
publisher
year of publication
pages
p. 145-148 : ill
notes
Bibliogr.: 3 ref
language
inglise
Kropman, D., Mellikov, E., Lott, K., Kärner, T., Heinmaa, I. et al. Interaction of point defects with impurities in the Si-SiO2 system and its influence on the properties of the interface // Getterring and defect engineering in semiconductor technology XIII : CADEST 2009 : proceedings of the XIIIth International Autumn Meeting, Döllnsee-Schorfheide, north of Berlin, Germany, September 26 - October 02, 2009. Stafa-Zurich : Trans Tech Publications, 2010. p. 145-148 : ill.