compact view print

Comparison of photon recycling effect in GaAs and GaN structures

author
Velmre, Enn
Udal, Andres
statement of authorship
Enn Velmre and Andres Udal
source
Proceedings of the Estonian Academy of Sciences. Engineering = Eesti Teaduste Akadeemia toimetised. Tehnikateadused
publisher
Estonian Academy Publishers
journal volume number month
vol. 10, 3
year of publication
2004
pages
p. 157-172 : ill
url
https://www.ester.ee/record=b1072102*est
subject term
footonid
absorptsioon
ISSN
1406-0175
notes
Bibliogr.: 31 ref
Kokkuvõte: Footonite tagasineeldumise võrdlus GaAs- ja GaN-struktuurides
Special issue on electronics
TalTech department
elektroonikainstituut
language
inglise
Velmre, E., Udal, A. Comparison of photon recycling effect in GaAs and GaN structures // Proceedings of the Estonian Academy of Sciences. Engineering = Eesti Teaduste Akadeemia toimetised. Tehnikateadused (2004) vol. 10, 3, p. 157-172 : ill. https://www.ester.ee/record=b1072102*est