Gate and base drivers for silicon carbide power transistors : an overview
author
Peftitsis, Dimosthenis
Rabkowski, Jacek
statement of authorship
Dimosthenis Peftitsis, and Jacek Rabkowski
source
IEEE transactions on power electronics
journal volume number month
vol. 31, 10
year of publication
2016
pages
p. 7194-7213 : ill
url
http://dx.doi.org/10.1109/TPEL.2015.2510425
subject term
jõutransistorid
pooljuhtseadised
lülitid
keyword
base driver
gate driver
high efficiency
high switching frequency
high temperature
silicon carbide
switching performance
ISSN
0885-8993
notes
Bibliogr.: 175 ref
TTÜ department
elektrotehnika instituut
language
inglise