Dedicated to the memory of Prof. M. Sheinkman effect of ultrasonic treatment on the defect structure of the Si-SiO2 system
statement of authorship
D. Kropman, S. Dolgov, P. Onufrijevs, E. Dauksta
source
Gettering and Defect Engineering in Semiconductor Technology XV
location of publication
[S.l.]
publisher
year of publication
pages
p. 352-357 : ill
series
Solid state phenomena ; 205-206
conference name, date
15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013, 22-27 September 2013
conference location
Oxford, UK
ISSN
1012-0394
ISBN
978-303785824-0
notes
Bibliogr.: 14 ref
scientific publication
teaduspublikatsioon
TalTech department
language
inglise
quartile
classifier
Kropman, D., Dolgov, S., Onufrijevs, P., Dauksta, E. Dedicated to the memory of Prof. M. Sheinkman effect of ultrasonic treatment on the defect structure of the Si-SiO2 system // Gettering and Defect Engineering in Semiconductor Technology XV. [S.l.] : Trans Tech Publications, 2014. p. 352-357 : ill. (Solid state phenomena ; 205-206).