Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probe
author
Mizsei, Janos
Korolkov, Oleg
Toompuu, Jana
Rang, Toomas
statement of authorship
J. Mizsei, O. Korolkov, J. Toompuu, T. Rang
source
The 9th European Conference on Silicon Carbide and Related Materials : abstract book : St. Petersburg Russia, 2-6 September, 2012
location of publication
St. Petersburg
publisher
Trans Tech Publications
year of publication
2012
pages
2 p. : ill
conference name, date
9th European Conference on Silicon Carbide and Related Materials, 2-6 September, 2012
conference location
St. Petersburg, Russia
subject term
Schottky barjäär
lekked
dislokatsioon (füüsika)
notes
Bibliogr.: 5 ref
TalTech department
Thomas Johann Seebecki elektroonikainstituut
language
inglise