Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties
author
statement of authorship
D.Kropman, E.Mellikov, A.Öpik, K.Lott, O.Volobujeva, T.Kärner, I.Heinmaa, T.Laas and A.Medvid
source
journal volume number month
404
year of publication
pages
23/24, p. 5153-5155 : ill
url
Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties
subject term
ISSN
0921-4526
notes
Bibliogr.: 5 ref
language
inglise
Kropman, D., Mellikov, E., Öpik, A., Lott, K., Volobujeva, O., Kärner, T., Heinmaa, I., Laas, T., Medvid, A. Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties // Physica B : condensed matter (2009) 404, 23/24, p. 5153-5155 : ill.