Two-dimensional nonisothermal analysis of the current crowding effect at nonuniform SiC Schottky contacts using device simulator DYNAMIT-2DT

statement of authorship
Raido Kurel and Andres Udal
location of publication
Tallinn
year of publication
pages
p. 51-54 : ill
ISBN
9985-59-292-1
notes
Bibliogr.: 13 ref