Interaction between point defects, extended defects and impurities in the Si-SiO2 system during the process of its formation
statement of authorship
D.Kropman, T.Kärner, U.Abru, Ü.Ugaste, E.Mellikov
source
journal volume number month
459
year of publication
pages
1/2, p. 53-57 : ill
subject term
ISSN
0040-6090
notes
Bibliogr.: 13 ref
Kropman, D., Kärner, T., Abru, U., Ugaste, Ü., Mellikov, E.* Interaction between point defects, extended defects and impurities in the Si-SiO2 system during the process of its formation // Thin solid films (2004) 459, 1/2, p. 53-57 : ill.