Review of - SiC wide-bandgap heterostructure properties as an alternate semiconductor material

author
Rajput Priti, J.
Nitnaware, V.N.
statement of authorship
Rajput Priti J., Udayan S. Patankar, Ants Koel, and V.N. Nitnaware
source
International Conference on Inventive Research in Material Science and Technology, ICIRMCT 2018 : March 23-24, 2018
location of publication
[S.l.]
publisher
year of publication
pages
art. 020011
series
AIP Conference Proceedings ; 1966, 1
conference name, date
International Conference on Inventive Research in Material Science and Technology : ICIRMCT 2018 : March 23-24, 2018
conference location
Coimbatore, India
kvartiil
Q3
category (general)
ISSN
0094243X
ISBN
978-073541671-0
notes
Bibliogr.: 24 ref
scientific publication
teaduspublikatsioon
classifier
3.1
language
inglise
Rajput Priti, J., Patankar, U.S, Koel, A., Nitnaware, V.N. Review of - SiC wide-bandgap heterostructure properties as an alternate semiconductor material // International Conference on Inventive Research in Material Science and Technology, ICIRMCT 2018 : March 23-24, 2018. [S.l.] : AIP Publishing, 2018. art. 020011. (AIP Conference Proceedings ; 1966, 1). https://doi.org/10.1063/1.5038690