Nanoscale and microscale simulations of N-N junction heterostructures of 3C-4H silicon carbide
author
Rashid, Muhammad Haroon
Koel, Ants
Rang, Toomas
Gähwiler, Reto
Grosberg, Martin
Jõemaa, Rauno
statement of authorship
Haroon Rashid, Ants Koel, Toomas Rang, Reto Gähwiler, Martin Grosberg & Rauno Jõemaa
source
Materials and contact characterisation VIII
location of publication
Southampton
publisher
WIT Press
year of publication
2017
pages
p. 235-248 : ill
series
WIT transactions on engineering sciences ; 116
conference name, date
8th International Conference on Computational Methods and Experiments in Materials Characterisation, 21-23 June, 2017
conference location
Tallinn, Estonia
url
http://dx.doi.org/10.2495/MC170241
subject term
pooljuhid
karbiidid
ränikarbiid
elektroonikaaparatuur
keyword
heterostructures
silicon carbide
3C-SiC
4H-SiC
transmission spectrum
projected device density of states (PDDOS)
ISSN
1746-4471
ISBN
978-1-78466-197-7
notes
Bibliogr.: 24 ref
TTÜ department
Thomas Johann Seebecki elektroonikainstituut
language
inglise