Numerical simulations of wideband SiC N-N heterostructure diode
statement of authorship
Udayan S Patankar, Ants Koel, Tamás Pard
source
location of publication
Danvers
publisher
year of publication
pages
4 p
conference name, date
2020 IEEE Latin America Electron Devices Conference (LAEDC), February 25-28, 2020
conference location
San Jose, Costa Rica
subject term
keyword
notes
Bibliogr.: 30 ref
TTÜ department
language
inglise
Patankar, U.S., Koel, A., Pardy, T. Numerical simulations of wideband SiC N-N heterostructure diode // LAEDC 2020 : Latin American Electron Devices Conference, San José, Costa Rica, February 25-28, 2020. Danvers : IEEE, 2020. 4 p.