print

Study of radiative recombination influence in GaN and GaAs bipolar transistor structures

author
Velmre, Enn
Udal, Andres
Verbitski, Irina
statement of authorship
E.Velmre, A.Udal, I.Verbitski
source
BEC 2004 : proceedings of the 9th Biennial Baltic Electronics Conference : October 3-6, 2004, Tallinn, Estonia
location of publication
Tallinn
publisher
Tallinn University of Technology
year of publication
2004
pages
p. 59-62 : ill
subject term
bipolaartransistorid
galliumiühendid
nitriidid
rekombinatsioon
ISBN
9985-59-462-2
notes
Bibliogr.: 21 ref
language
inglise
Velmre, E., Udal, A., Verbitski, I. Study of radiative recombination influence in GaN and GaAs bipolar transistor structures // BEC 2004 : proceedings of the 9th Biennial Baltic Electronics Conference : October 3-6, 2004, Tallinn, Estonia. Tallinn : Tallinn University of Technology, 2004. p. 59-62 : ill.