Velmre, E., Udal, A., Verbitski, I. - TalTech Research Portal

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Study of radiative recombination influence in GaN and GaAs bipolar transistor structures

author

Velmre, Enn

Udal, Andres

Verbitski, Irina

statement of authorship

E.Velmre, A.Udal, I.Verbitski

source

BEC 2004 : proceedings of the 9th Biennial Baltic Electronics Conference : October 3-6, 2004, Tallinn, Estonia

location of publication

Tallinn

publisher

Tallinn University of Technology

year of publication

2004

pages

p. 59-62 : ill

ISBN

9985-59-462-2

notes

Bibliogr.: 21 ref

TalTech department

elektroonikainstituut

language

inglise

Märksõnad ja võtmesõnad

subject term

bipolaartransistorid

galliumiühendid

nitriidid

rekombinatsioon

Velmre, E., Udal, A., Verbitski, I. Study of radiative recombination influence in GaN and GaAs bipolar transistor structures // BEC 2004 : proceedings of the 9th Biennial Baltic Electronics Conference : October 3-6, 2004, Tallinn, Estonia. Tallinn : Tallinn University of Technology, 2004. p. 59-62 : ill.