Mizsei, J., Korolkov, O., Toompuu, J., Mikli, V., Rang, T.

Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probe

author

Mizsei, Janos

Korolkov, Oleg

Toompuu, Jana

Mikli, Valdek

Rang, Toomas

statement of authorship

J. Mizsei, O. Korolkov, J. Toompuu, V. Mikli and T. Rang

source

Silicon Carbide and Related Materials 2012 : selected peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation

location of publication

Durnten-Zurich

publisher

Trans Tech Publications

year of publication

2013

pages

p. 677-680 : ill

series

Materials science forum ; 740-742

conference name, date

9th European Conference on Silicon Carbide and Related Materials, 2-6 September, 2012

conference location

St. Petersburg, Russian Federation

subject term

Schottky barjäär

lekked

dislokatsioon (füüsika)

keyword

Schottky diodes

leakage currents

Kelvin probe method

dislocations

SEM investigations

ISSN

0255-5476

ISBN

978-3-03785-624-6

notes

Bibliogr.: 4 ref

TTÜ department

Thomas Johann Seebecki elektroonikainstituut

materjaliuuringute teaduskeskus

language

inglise

Mizsei, J., Korolkov, O., Toompuu, J., Mikli, V., Rang, T. Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probe // Silicon Carbide and Related Materials 2012 : selected peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation. Durnten-Zurich : Trans Tech Publications, 2013. p. 677-680 : ill. (Materials science forum ; 740-742).