Low-temperature annealing of lightly doped n-4H-SiC layers after irradiation with fast electronsKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSemiconductors2019 / p. 975−978 https://doi.org/10.1134/S1063782619070133 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS