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Abstracts of International Conference on Silicon Carbide and Related Materials : ICSCRM'99 : October 10-15, 1999, Research Triangle Park, North-Carolina, USA (source)
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book article
A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiC
Velmre, Enn
;
Udal, Andres
Abstracts of International Conference on Silicon Carbide and Related Materials : ICSCRM'99 : October 10-15, 1999, Research Triangle Park, North-Carolina, USA
1999
/
paper no 395, 2 p
book article
2
book article
Measurements of charge carrier lifetime temperature dependence in 4H-SiC power diodes
Velmre, Enn
;
Udal, Andres
Abstracts of International Conference on Silicon Carbide and Related Materials : ICSCRM'99 : October 10-15, 1999, Research Triangle Park, North-Carolina, USA
1999
/
paper no 394, 2 p
book article
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