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radiation defects (keyword)
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book article EST
/
book article ENG
Change in the parameters of electron-irradiated 4H-SIC Schottky diodes as a function of the time during low-temperature isothermal annealing
Korolkov, Oleg
;
Kozlovski, Vitali V.
;
Lebedev, Alexander A.
;
Toompuu, Jana
;
Sleptsuk, Natalja
;
Rang, Toomas
Silicon Carbide and Related Materials 2018 : 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK
2019
/
p. 734-737
https://doi.org/10.4028/www.scientific.net/MSF.963.734
Conference proceeding at Scopus
Article at Scopus
book article EST
/
book article ENG
2
book article EST
/
book article ENG
Degradation of 600-V 4H-SiC Schottky diodes under irradiation with 0.9 MeV electrons
Lebedev, Alexander A.
;
Davidovskaja, Klavdia
;
Kozlovski, Vitali V.
;
Korolkov, Oleg
;
Sleptšuk, Natalja
;
Toompuu, Jana
Silicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece
2017
/
p. 447-450 : ill
https://doi.org/10.4028/www.scientific.net/MSF.897.447
Conference proceedings at Scopus
Article at Scopus
book article EST
/
book article ENG
3
book article EST
/
book article ENG
Dependence of the carrier removal rate in 4H-SIC PN structures on irradiation temperature
Lebedev, Alexander A.
;
Davydovskaya, Klavdya S.
;
Kozlovski, Vitali V.
;
Korolkov, Oleg
;
Sleptsuk, Natalja
;
Toompuu, Jana
Silicon Carbide and Related Materials 2018 : 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK
2019
/
p. 730-733
https://doi.org/10.4028/www.scientific.net/MSF.963.730
Conference proceeding at Scopus
Article at Scopus
book article EST
/
book article ENG
4
journal article EST
/
journal article ENG
Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide schottky diodes
Kozlovski, Vitali V.
;
Korolkov, Oleg
;
Davydovskaya, Klavdia S.
;
Lebedev, Alexander A.
;
Levinshteǐn, Michael E.
;
Sleptšuk, Natalja
;
Strel'Chuk, Anatolii M.
;
Toompuu, Jana
Technical Physics Letter
2020
/
p. 287 - 289
https://doi.org/10.1134/S1063785020030244
Journal metrics at Scopus
Article at Scopus
Journal metrics at WOS
Article at WOS
journal article EST
/
journal article ENG
Number of records 4, displaying
1 - 4
keyword
40
1.
radiation defects
2.
axial defects
3.
building defects
4.
critical-sized defects
5.
Deep defects
6.
defects
7.
insulation defects
8.
interface defects
9.
material defects
10.
non-defects
11.
pavement defects
12.
physical defects
13.
point defects
14.
structural defects
15.
general - radiation mechanisms
16.
global radiation
17.
infrared radiation
18.
ionizing radiation
19.
low-level radiation
20.
micrawave radiation
21.
microwave radiation
22.
non-ionizing radiation
23.
ozone/UV radiation
24.
radiation
25.
radiation effects
26.
radiation exposure
27.
radiation hardening
28.
radiation protection
29.
radiation therapy
30.
radiation-hard detectors
31.
radiation-hard electronics
32.
radiofrequency radiation
33.
radiofrequency radiation
34.
recombination radiation reabsorption
35.
solar radiation
36.
synchrotron radiation
37.
terahertz radiation
38.
UV radiation
39.
UVC radiation
40.
γ-radiation
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