• Achieving accuracy in charge carrier mobility modelling in siliconMnatsakanov, T.T.; Gresserov, B.N.; Pomortseva, L.I.Automation, simulation & measurement : ASM'91 : 3rd biennal conference, Tallinn, October 7-11, 1991. Section S / Tallinn Technical University1992 / p. 89-94: ill
• AFM and SEM investigations of ion beam synthesized Mg2Si precipitates in Si substratesAngelov, Christo; Mikli, Valdek; Amov, Blagoj; Goranova, E.Journal of optoelectronics and advanced materials2005 / 1, p. 369-373 https://old.joam.inoe.ro/arhiva/pdf7_1/Angelov3.pdf
• Analyses of frequency dependencies of Q factor for planar inductors on siliconJankovskis, Janis; Yurshevich, Valentins; Rankis, GunarsBEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedings1998 / p. 231-234
• Band gap engineering by cationic substitution in Sn(Zr1−xTix)Se3 alloy for bottom sub-cell application in solar cellsKondrotas, Rokas; Pakstas, Vidas; Franckevicius, Marius; Suchodolskis, Arturas; Tumenas, Saulius; Jasinskas, Vidmantas; Juskenas, Remigijus; Krotkus, Arunas; Muska, Katri; Kauk-Kuusik, MaritJournal of materials chemistry A2023 / p. 26488–26498 : ill https://doi.org/10.1039/D3TA05550G https://www.scopus.com/sourceid/21100232403 https://www.scopus.com/record/display.uri?eid=2-s2.0-85179035366&origin=inward&txGid=403c5793f541ec023234bec980d07d4f https://jcr.clarivate.com/jcr-jp/journal-profile?journal=J%20MATER%20CHEM%20A&year=2023 https://www.webofscience.com/wos/woscc/full-record/WOS:001110735000001
• Comparative ellipsometric and ion beam analytical studies on ion beam crystallized silicon implanted with Zn and Pb ionsLohner, Tivador; Angelov, Christo; Mikli, ValdekThin solid films2008 / 22, p. 8009-8012 https://www.sciencedirect.com/science/article/pii/S0040609008003660
• Corrected accounting of electron-hole scattering in cross-term current equations for Si and SiCVelmre, Enn; Udal, AndresPhysica scripta1999 / Proceedings of 18th Nordic Semiconductor Meeting, Linköping, Sweden, June 7-10, 1998, ISBN 91-87308-71-1, p. 193-197: ill https://ui.adsabs.harvard.edu/abs/1999PhST...79..193V/abstract
• Corrected accounting of electron-hole scattering in cross-term current equations for Si and SiCVelmre, Enn; Udal, Andres18th Nordic Semiconductor Meeting, Linköping, June 7-10, 1998 : abstracts1998 / p. F-88: ill https://iopscience.iop.org/article/10.1238/Physica.Topical.079a00193
• Correlation between the UV-reflectance spectra and the structure of poly-Si films obtained by aluminium induced crystallizationDimova-Malinovska, D.; Angelov, O.; Sendova-Vassileva, M.; Mikli, ValdekJournal of optoelectronics and advanced materials2009 / 9, p. 1079-1085 https://www.researchgate.net/publication/288122478_Correlation_between_the_UV-reflectance_spectra_and_the_structure_of_poly-Si_films_obtained_by_Aluminium_Induced_Crystallization
• A double-emitter silicon differential strain sensitive transistor with an accelerating field in its baseBabichev, G.G.; Kozlovskii, S.I.; Romanov, V.A.; Sharan, N.N.BEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedings1998 / p. 263-264: ill
• Effect of calcium to silicon ratio on the microstructure of hydrated calcium silicate gels prepared under medium alkalinityBa, Haojing; Li, Jiajie; Ni, Wen; Li, Ying; Ju, Yongjian; Zhao, Ben; Wen, Guoping; Hitch, Michael WilliamConstruction and building materials2023 / art. 131240, 11 p.: ill https://doi.org/10.1016/j.conbuildmat.2023.131240
• Electrochemical deposition of thin polypyrrole films on silicon substratesIntelmann, Carl Matthias; Sõritski, Vitali; Tsankov, Dimiter; Hinrichs, Karsten; Rappich, Jörg5th ISE Spring Meeting : Dublin (Ireland), 01.-04.05.072007 / ? p
• Electrochemically deposited ultrathin polypyrrole films on siliconIntelmann, Carl Matthias; Sõritski, Vitali; Tsankov, Dimiter; Hinrichs, Karsten; Rappich, JörgGDCh (German Chemical Society) - YoungChemists : Spring Symposium 2007 : Chemnitz (Germany), 22.-24.03.072007 / ? p
• From virtual characterization to test-chips : DFM analysis through pattern enumerationMartins, Mayler G.A.; Pagliarini, Samuel Nascimento; Isgenc, Mehmet Meric; Pileggi, LarryIEEE transactions on computer-aided design of integrated circuits and systems2020 / p. 520-532 https://doi.org//10.1109/TCAD.2018.2889772
• High phonon-drag thermoelectric efficiency of SiC at low temperaturesVelmre, Enn; Udal, Andres; Grivickas, V.Final program of the 10th International Conference on SiC and Related Materials : ICSCRM'2003 : Lyon, France, Oct. 5-10, 20032003 / p. ThP4-13 https://www.researchgate.net/publication/240834700_High_Phonon-Drag_Thermoelectric_Efficiency_of_SiC_at_Low_Temperatures
• Hydrogen interaction with point defects in the Si-SiO2 structures and its influence on the interface propertiesKropman, Daniel; Mellikov, Enn; Kärner, T.; Ugaste, Ülo; Laas, Tõnu; Heinmaa, I.; Abru, Uno; Medvid, A.Solid state phenomena2008 / p. 345-350 https://www.scientific.net/SSP.131-133.345
• Impurity interaction with point defects in the Si-SiO2 structures and its influence on the interface propertiesKropman, Daniel; Mellikov, Enn; Kärner, T.; Ugaste, Ülo; Laas, Tõnu; Heinmaa, I.; Medvid, A.Materials science and engineering : B2006 / p. 222-226 : ill https://www.sciencedirect.com/science/article/pii/S0921510706004375
• Influence of excitonic scattering on charge carrier ambipolar diffusion in siliconUdal, Andres; Velmre, EnnESSDERC'97 : proceedings of the 27th European Solid-State Device Research Conference, Stuttgart, Germany, 22-24 September 19971997 / p. 212-215: ill
• Interaction between point defects in the Si-Si=2 systemKropman, Daniel; Kärner, T.; Samoson, Ago; Heinmaa, I.; Mellikov, EnnNuclear instruments & methods in physics research. Section B2002 / p. 78-82 https://www.sciencedirect.com/science/article/pii/S0168583X0100862X
• Interaction between point defects in the Si-SiO2 system during the process of its formationKropman, Daniel; Kärner, T.; Samoson, Ago; Heidmaa, I.; Ugaste, Ülo; Mellikov, EnnDefect and Diffusion Forum2001 / p. 1737-1744 https://www.sciencedirect.com/science/article/abs/pii/S0168583X0100862X
• Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface propertiesKropman, Daniel; Mellikov, Enn; Kärner, Tiit; Heinmaa, Ivo; Laas, Tõnu; Londos, Charalampos; Misiuk, AndrzejSolid state phenomena2011 / p. 263-266 https://www.sciencedirect.com/science/article/pii/S0040609009014564
• Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface propertiesKropman, Daniel; Kärner, Tiit; Dolgov, Sergei; Heinmaa, Ivo; Laas, Tõnu; Londos, CharalamposPhysica status solidi (c)2011 / p. 694-696 : ill https://www.sciencedirect.com/science/article/pii/S0040609009014564
• Interaktsioon punktdefektide ja lisandite vahel süsteemis Si-SiO2 ja nende mõju piirpinna omadustele : [ettekande sisukokkuvõte]Kropman, Daniel; Kärner, T.; Heinmaa, I.Eesti Füüsika Seltsi aastaraamat 20082009 / lk. 119-120
• Jaan Raik: Computers must undergo a revolution in order to continue their rapid developmentRaik, JaanEstonian Centre of Excellence in ICT Research2021 / p. 43-47 : ill http://www.digar.ee/id/nlib-digar:634779 https://www.ester.ee/record=b5456158*est
• Jaan Raik: kiibidisain aitaks saada Eestil jõukaks tehnoloogiamaaksMaidla, Margusnovaator.err.ee2023
• Kassikuld võib osutuda elektroonikatööstuses kullast kallimaksKristmann, Katriinnovaator.err.ee2024 https://novaator.err.ee/1609237239/kassikuld-voib-osutuda-elektroonikatoostuses-kullast-kallimaks
• Keemia tee klaasist ränisse : tänavune Nobeli keemiaauhind seab õigluse jalule keemiateoreetikute ja arvutikeemikute hulgasStrandberg, MarekSirp2013 / lk. 26 https://www.sirp.ee/s1-artiklid/c21-teadus/2013-10-17-20-15-58-2/
• Kleenukesed päikeseelemendid aitaks vältida ränipaneele ootavat kriisiSibinski, Maciejnovaator.err.ee2024 https://novaator.err.ee/1609243563/kleenukesed-paikeseelemendid-aitaks-valtida-ranipaneele-ootavat-kriisi
• Modeling of charge carrier non-isothermal transport parameters in siliconVelmre, Enn; Udal, AndresBEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedings1998 / p. 71-74: ill
• Modelling of charge carrier non-isothermal transport in silicon and silicon carbideVelmre, Enn; Udal, AndresProceedings of the Estonian Academy of Sciences. Engineering2000 / 2, p. 144-154 : ill https://artiklid.elnet.ee/record=b1004044*est
• Modular synthesis of (Borylmethyl)silanes through orthogonal functionalization of a carbon atomChowdhury, Rajdip; Elek, Gábor Zoltán; Meana-Baamonde, B.; Mendoza, AbrahamOrganic letters2023 / p. 1935-1940 : ill https://doi.org/10.1021/acs.orglett.3c00474 https://www.scopus.com/sourceid/26396 https://www.scopus.com/record/display.uri?eid=2-s2.0-85150281701&origin=inward&txGid=9acd2a8bd99ec794a49f75be08eef962 https://jcr.clarivate.com/jcr-jp/journal-profile?journal=ORG%20LETT&year=2023 https://www.webofscience.com/wos/woscc/full-record/WOS:000953136700001
• Must räni tõi helged lootusedKrustok, JüriEesti Päevaleht2000 / 19. veebr., lk. 23 https://artiklid.elnet.ee/record=b1637055*est
• Point defects interaction with extended defects and impurities and its influence on the Si-SiO2 system propertiesKropman, Daniel; Arbu, Uno; Kärner, T.; Ugaste, Ülo; Mellikov, Enn; Kauk, Marit; Heinmaa, I.; Samoson, Ago; Medvid, A.Gettering and defect engineering in semiconductor technology. XI2005 / p. 333-338 : ill https://www.researchgate.net/publication/243760197_Point_Defects_Interaction_with_Extended_Defects_and_Impurities_and_Its_Influence_on_the_Si-SiO_2_System_Properties
• Point defects interaction with extended defects in the Si-SiO2 system [Electronic resource]Kropman, Daniel; Kärner, T.; Abru, Uno; Ugaste, Ülo; Mellikov, EnnProceedings IVC-16 : Venice, 20042004 / p. SS1-TuP394 [CD-ROM] https://www.researchgate.net/publication/243760197_Point_Defects_Interaction_with_Extended_Defects_and_Impurities_and_Its_Influence_on_the_Si-SiO_2_System_Properties
• Porphyrin-based hybrid nanohelices : cooperative effect between molecular and supramolecular chirality on amplified optical activityAnfar, Zakaria; Kuppan, Balamurugan; Scalabre, Antoine; Nag, Rahul; Pouget, Emilie; Nlate, Sylvain; Magna, Gabriele; Di Filippo, Ilaria; Monti, Donato; Naitana, Mario L.; Stefanelli, Manuela; Nikonovich, Tatsiana; Borovkov, Victor; Aav, Riina; Paolesse, Roberto; Oda, ReikoThe journal of physical chemistry B2024 / p. 1550-1556 https://doi.org/10.1021/acs.jpcb.3c07153
• Predictable quantum efficient detector. I, Photodiodes and predicted responsivitySildoja, Meelis; Manoocheri, Farshid; Merimaa, Mikko; Ikonen, Erkki; Müller, Ingmar; Werner, Lutz; Gran, Jarle; Kübarsepp, Toomas; Smid, Marek; Rastello, Maria LuisaMetrologia2013 / p. 385-394 : ill https://doi.org/10.1088/0026-1394/50/4/385 https://cris.vtt.fi/en/publications/predictable-quantum-efficient-detector-i-photodiodes-and-predicte https://www.scopus.com/sourceid/15443 https://www.scopus.com/record/display.uri?eid=2-s2.0-84881459696&origin=resultslist&sort=plf-f&src=s&sot=b&sdt=b&s=DOI%2810.1088%2F0026-1394%2F50%2F4%2F385%29&sessionSearchId=c42962733a94ae09ac921c72c691ac9c&relpos=0 https://jcr.clarivate.com/jcr-jp/journal-profile?journal=METROLOGIA&year=2013 https://www.webofscience.com/wos/woscc/full-record/WOS:000322453900009
• Production of silicon free master alloys in EstoniaGorkunov, Valeri; Munter, ReinScientific proceedings of Riga Technical University. 1. [series], Material science and applied chemistry2007 / p. 111-121
• Päikeseenergeetika tulevikku kujundavad kilepinnad ja tandempaneelidPiir, Raitnovaator.err.ee2023 https://novaator.err.ee/1609009796/paikeseenergeetika-tulevikku-kujundavad-kilepinnad-ja-tandempaneelid
• Rapid prototyping of silicon structures by aid of laser and abrasive-jet machiningKruusing, Arvi; Leppävuori, Seppo; Uusimäki, Antti; Uusimäki, M.Design, Test and Microfabrication of MEMS and MOEMS : 30 March-1 April, 1999, Paris, France1999 / p. 870-878 : ill https://opticalengineering.spiedigitallibrary.org/conference-proceedings-of-spie/3680/0000/Rapid-prototyping-of-silicon-structures-by-aid-of-laser-and/10.1117/12.341285.full
• Recombination behaviour at the ultra-thin polypyrrole film/silicon interface investigated by in-situ pulsed photoluminescenceIntelmann, Carl Matthias; Hinrichs, Karsten; Sõritski, Vitali; Yang, Florent; Rappich, JörgJapanese journal of applied physics2008 / 2, p. 554-557 https://iopscience.iop.org/article/10.1143/JJAP.47.554
• Relationships between essential and non-essential elements in plants with different nutritional strategies and silicon absorption capacities : [manuscript]Monei, Nthati Lilian; Benyr, V.; Heilmeier, Hermann; Hitch, Michael William; Wiche, OliverThe international journal of environment & health2023
• Review of - SiC wide-bandgap heterostructure properties as an alternate semiconductor materialPatankar, Udayan Sunil; Rajput Priti, J.; Koel, Ants; Nitnaware, V.N.International Conference on Inventive Research in Material Science and Technology, ICIRMCT 2018 : March 23-24, 20182018 / art. 020011 https://doi.org/10.1063/1.5038690 https://www.scopus.com/sourceid/26916 https://www.scopus.com/record/display.uri?eid=2-s2.0-85047817303&origin=inward&txGid=d9e41a3e816b6aa4753117b1c41d5840 https://www.webofscience.com/wos/woscc/full-record/WOS:000436343800011
• Selective laser melting of commercially pure siliconLai, Zhouyi; Guo, Ting; Zhang, Shengting; Kollo, Lauri; Attar, Hooyar; Wang, Zhi; Prashanth, Konda GokuldossJournal Wuhan University of Technology, Materials Science Edition2022 / p. 1155 - 1165 https://doi.org/10.1007/s11595-022-2647-3 https://www.scopus.com/sourceid/14796 https://www.scopus.com/record/display.uri?eid=2-s2.0-85147689115&origin=inward&txGid=e401e5c113cf2ab9cc7677af6c2b5e59 https://jcr.clarivate.com/jcr-jp/journal-profile?journal=J%20WUHAN%20UNIV%20TECHNOL&year=2022 https://www.webofscience.com/wos/woscc/full-record/WOS:000929749900019
• Silica granulates in concrete - dispersion and durability aspectsLagerblad, Björn; Utkin, Pjotr1993 https://www.ester.ee/record=b1025989*est
• Szilicium planar technologiai eljaras szamitögepes stimulaciojaRang, Toomas; Tarnay, K.; Masszi, F.Finommechanika, mikrotechnika: az Optikai, Akusztikai és Filmtechnikai Egyesület, a Híradástechnikai Tudományos Egyesület és a Méréstechnikai és Automatizálási Tudományos Egyesület lapja1979 / p. 257-260
• Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface propertiesKropman, Daniel; Mellikov, Enn; Öpik, Andres; Lott, Kalju; Volobujeva, Olga; Kärner, T.; Heinmaa, I.; Laas, Tõnu; Medvid, A.Physica B : condensed matter2009 / 23/24, p. 5153-5155 : ill
• Stress relaxation mechanism by strain in the Si-SiO2 system and its influence on the interface propertiesKropman, Daniel; Seeman, Viktor; Dolgov, Sergei; Heinmaa, Ivo; Medvid, ArturPhysica Status Solidi (C) Current Topics in Solid State Physics2016 / p. 790 - 792 https://doi.org/10.1002/pssc.201600051 https://www.scopus.com/sourceid/4700152710 https://www.scopus.com/record/display.uri?eid=2-s2.0-84992626289&origin=resultslist&sort=plf-f&src=s&sid=cdfc52fb027a72eafe4f96d734f78c62&sot=b&sdt=b&s=DOI%2810.1002%2Fpssc.201600051%29&sl=27&sessionSearchId=cdfc52fb027a72eafe4f96d734f78c62&relpos=0 https://www.webofscience.com/wos/woscc/full-record/WOS:000399448900017
• Study of ion implanted Fe depth distribution in Si after pulsed ion beam treatmentAngelov, Christo; Georgiev, S.; Amov, Blagoj; Goranova, E.; Mikli, Valdek; Dezsi, I.; Kotai, E.Journal of optoelectronics and advanced materials2007 / 2, p. 307-310 https://www.researchgate.net/publication/289186791_Study_of_the_ion_implanted_Fe_depth_distribution_in_Si_after_pulsed_ion_beam_treatment
• Technonomics of manufacturing of silicon microsystems on WSIBubennikov, Alexander N.; Bubennikov, Alexander A.BEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedings1998 / p. 29-32: ill
• The role of silicon in the hot dip galvanizing processSepper, Sirli; Peetsalu, Priidu; Kulu, Priit; Saarna, Mart; Mikli, ValdekProceedings of the Estonian Academy of Sciences2016 / p. 159-165 : ill https://artiklid.elnet.ee/record=b2768226*est https://doi.org/10.3176/proc.2016.2.11 https://www.scopus.com/sourceid/11500153303 https://www.scopus.com/record/display.uri?eid=2-s2.0-84964237504&origin=inward&txGid=a285ecedd305fe8b43bfa35583c2f68e https://jcr.clarivate.com/jcr-jp/journal-profile?journal=P%20EST%20ACAD%20SCI&year=2016 https://www.webofscience.com/wos/woscc/full-record/WOS:000376418700012
• Ursache und Wirkungsweise der Alkalireaktion in den aus estnischem Portlandölschieferzement hergestellten BetonenKikas, Verner; Ojaste, Kalju; Raado, Lembi-MerikeZKG International = Zement, Kalk, Gips international1999 / 2, S. 106-111
• Valgustkiirgav räniKrustok, JüriHorisont2001 / 1, lk. 12
• Üliõhuke päikesepaneel avab energia tootmisele uued uksedAlvela, Ain; Krautmann, Robertnovaator.err.ee2023 https://novaator.err.ee/1609152358/uliohuke-paikesepaneel-avab-energia-tootmisele-uued-uksed https://digikogu.taltech.ee/et/Item/e7e64926-5d49-40ad-8b3a-e225ea034f7d https://nauka.err.ee/1609153381/uchenyj-iz-jestonii-razrabatyvaet-solnechnye-paneli-kotorye-izmenjat-mir
• Зависимость подвижности электронов и дырок от температуры и концентрации примеси в кремнииRang, Toomas; Velmre, EnnАнализ и моделирование технических устройств и систем АСУТП1977 / с. 115-120 : илл https://www.ester.ee/record=b2190987*est https://digikogu.taltech.ee/et/Item/b7c66054-0b4f-4684-9453-442bc7e6e200
• Изучение иммобилизации протеаз на кремнеземных материалахJegorov, H.R.; Kivisilla, Külliki; Kipper, Heino; Erin, Anne; Köstner, AdoПолучение и применение иммобилизованных ферментов1977 / с. 29-34 https://www.ester.ee/record=b1309558*est https://digikogu.taltech.ee/et/Item/67557c4a-b3ad-4f67-9fe9-4590245ecb73
• Иммобилизация пепсина на кремнеземных материалахLukoševiciene, N.; Sadauskas, P.; Ciurlis, T.; Kreen, Malle; Köstner, AdoПолучение и применение иммобилизованных ферментов1977 / с. 57-66 : илл https://www.ester.ee/record=b1309558*est https://digikogu.taltech.ee/et/Item/67557c4a-b3ad-4f67-9fe9-4590245ecb73
• Инжекционные зависимости времени жизни неосновных носителей заряда в кремнии, легированном золотом и платинойUdal, AndresСиловые быстродействующие полупроводниковые приборы : сборник статей. Часть II1989 / с. 101-105 : ил., табл https://www.ester.ee/record=b1264433*est
• Испульсное легирование кремния в сильноточном газовом разрядеGavrilov, Aleksei; Katšurin, G.A.Письма в Журнал технической физики1982 / с. 388-391 https://www.ester.ee/record=b2142356*est
• Комплексное рентгенодифракционное исследование строения нарушенных слоев, обусловленных резкой кремнииMilvidski, M.; Fomin, V.; Meiler, BorissФизика и химия обработки материалов1986 / с. 122-125 https://www.ester.ee/record=b1804847*est
• Межфазное взаимодействие на контакте Ni-Si и Ni-GaAsMeiler, BorissПоверхность : физика, химия, механика1985 / с. 62-67 : илл https://www.ester.ee/record=b2149829*est
• Наращивание поликристаллических слоев кремния на рельефную поверхность двуокиси кремнияPaat, Aadu; Timma, Enn; Trombovetski, A.Труды по физике : сборник статей. 61973 / с. 27-33 : илл https://www.ester.ee/record=b2190564*est https://digikogu.taltech.ee/et/Item/020d3bce-d60f-45bd-aa8f-4906f2c1d0d6
• О целесообразности увеличения обратного напряжения силовых кремниевых диодовVaher, G.; Tarma, MatiПрименение эпитаксиальной технологии в производстве силовых полупроводниковых приборов : сборник материалов Всесоюзного научно-технического семинара. Часть 11978 / с. 21-24 https://www.ester.ee/record=b1273235*est
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• Определение механической растираемости неорганических носителейKöstner, Ado; Kipper, Heino; Erin, Anne; Pedak, M.Получение и применение иммобилизованных ферментов1977 / с. 51-55 : илл https://www.ester.ee/record=b1309558*est https://digikogu.taltech.ee/et/Item/67557c4a-b3ad-4f67-9fe9-4590245ecb73
• Отжиг имплантированных слоев кремния в плазме импульсного газового разрядаGavrilov, Aleksei; Katšurin, G.A.Физика и техника полупроводников = Physics and technics of semiconductors1981 / с.1232-1234 https://www.ester.ee/record=b1263919*est
• Получение высокохромистых сплавов TiC-Fe-Cr, легированных кремниемKübarsepp, JakobПорошковая металлургия = Powder metallurgy : ежемесячный научно-технический журнал1986 / с. 65-69 : рис., таб https://www.ester.ee/record=b1645489*est
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