• Change in the parameters of electron-irradiated 4H-SIC Schottky diodes as a function of the time during low-temperature isothermal annealingKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Toompuu, Jana; Sleptsuk, Natalja; Rang, ToomasSilicon Carbide and Related Materials 2018 : 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK2019 / p. 734-737 https://doi.org/10.4028/www.scientific.net/MSF.963.734 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-85071874502&origin=inward&txGid=a726a88a134fd68a3198db192e8c9ce6
• Comparative results of low temperature annealing of lightly doped n-layers of silicon carbide irradiated by protons and electronsKozlovski, Vitali V.; Korolkov, Oleg; Lebedev, Alexander A.; Toompuu, Jana; Sleptsuk, NataljaSilicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 20192020 / p. 231-236 https://doi.org/10.4028/www.scientific.net/MSF.1004.231 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-85089817325&origin=resultslist&sort=plf-f&src=s&sid=a6fb1194242752ab2b252272d233250c&sot=b&sdt=b&s=TITLE-ABS-KEY%28%22comparative+results+of+low+temperature%22%29&sl=23&sessionSearchId=a6fb1194242752ab2b252272d233250c&relpos=0
• Degradation of 600-V 4H-SiC Schottky diodes under irradiation with 0.9 MeV electronsLebedev, Alexander A.; Davidovskaja, Klavdia; Kozlovski, Vitali V.; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, JanaSilicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece2017 / p. 447-450 : ill https://doi.org/10.4028/www.scientific.net/MSF.897.447 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-85019977029&origin=inward&txGid=cac2b46fb29177c3805ee39a6870556e
• Degragation of 600-V 4H-SiC Schottky diodes under irradation with 0,9 MeV electronsLebedev, Alexander A.; Davydovskaja, K. S.; Kozlovski, Vitali V.; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, Jana11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]2016 / p. 49
• Dependence of the carrier removal rate in 4H-SIC PN structures on irradiation temperatureLebedev, Alexander A.; Davydovskaya, Klavdya S.; Kozlovski, Vitali V.; Korolkov, Oleg; Sleptsuk, Natalja; Toompuu, JanaSilicon Carbide and Related Materials 2018 : 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK2019 / p. 730-733 https://doi.org/10.4028/www.scientific.net/MSF.963.730 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-85071835490&origin=inward&txGid=91cce417d6c19402d77698ef09935e92
• Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide schottky diodesKozlovski, Vitali V.; Korolkov, Oleg; Davydovskaya, Klavdia S.; Lebedev, Alexander A.; Levinshteǐn, Michael E.; Sleptšuk, Natalja; Strel'Chuk, Anatolii M.; Toompuu, JanaTechnical Physics Letter2020 / p. 287 - 289 https://doi.org/10.1134/S1063785020030244 https://www.scopus.com/sourceid/12311 https://www.scopus.com/record/display.uri?eid=2-s2.0-85084000026&origin=resultslist&sort=plf-f&src=s&sid=12bb2cb298eaa413a39b1dd321135230&sot=b&sdt=b&s=TITLE-ABS-KEY%28%22influence+of+the+proton%22%29&sl=35&sessionSearchId=12bb2cb298eaa413a39b1dd321135230&relpos=4 https://jcr.clarivate.com/jcr-jp/journal-profile?journal=TECH%20PHYS%20LETT%2B&year=2022 https://www.webofscience.com/wos/woscc/full-record/WOS:000529352900023
• Low-temperature annealing of lightly doped n-4H-SiC layers after irradiation with fast electronsKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSemiconductors2019 / p. 975−978 https://doi.org/10.1134/S1063782619070133 https://www.scopus.com/sourceid/29834 https://www.scopus.com/record/display.uri?eid=2-s2.0-85068585613&origin=inward&txGid=3377015e7d50ef7770bff2c1af848b0e https://jcr.clarivate.com/jcr-jp/journal-profile?journal=SEMICONDUCTORS%2B&year=2022 https://www.webofscience.com/wos/woscc/full-record/WOS:000474481600021
• SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSilicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece2017 / p. 697-700 : ill https://doi.org/10.4028/www.scientific.net/MSF.897.697 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-85019975531&origin=inward&txGid=18ad7dd3df87b9328e380608cc81401c