• Amorphous Zn(O,Se) buffer layer for Cu(In,Ga)Se2 thin film solar cellsAbdalla, Akram; Danilson, Mati; Oueslati, Souhaib; Pilvet, Maris; Bereznev, SergeiMaterials science in semiconductor processing2021 / art. 105862 https://doi.org/10.1016/j.mssp.2021.105862 https://www.scopus.com/sourceid/26675 https://www.scopus.com/record/display.uri?eid=2-s2.0-85105288525&origin=inward&txGid=e25ee8a54982dd2857db927c8d530112 https://jcr.clarivate.com/jcr-jp/journal-profile?journal=MAT%20SCI%20SEMICON%20PROC&year=2022 https://www.webofscience.com/wos/woscc/full-record/WOS:000663689800007
• Au/Ga2O3/ZnO heterostructure nanorods arrays for effective photoelectrochemical water splittingAbdalla, Akram; Khan, Ibrahim; Sohail, Manzar; Qurash, AnsanulhaqSolar energy2019 / p. 333-338 : ill https://doi.org/10.1016/j.solener.2019.01.065 https://www.scopus.com/sourceid/13333 https://www.scopus.com/record/display.uri?eid=2-s2.0-85061399506&origin=inward&txGid=a1307cfccff81b1ed907f226eeb36895 https://jcr.clarivate.com/jcr-jp/journal-profile?journal=SOL%20ENERGY&year=2022 https://www.webofscience.com/wos/woscc/full-record/WOS:000463120700035
• Effect of the thickness on the electrical and optical properties of ZN(O,Se) layers prepared by PLDAbdalla, Akram; Bereznev, SergeiGSFMT Scientific Conference 2020 : Tallinn, February 4-5, 2020 : abstracts2020 / p. 10 http://fmtdk.ut.ee/wp-content/uploads/2020/01/GSFMT2020.pdf
• Energy levels determination of Zn(O,Se) thin filmsAbdalla, Akram; Danilson, Mati; Mikli, Valdek; Bereznev, SergeiMaterials science in semiconductor processing2023 / art. 107137 https://doi.org/10.1016/j.mssp.2022.107137 https://www.scopus.com/sourceid/26675 https://www.scopus.com/record/display.uri?eid=2-s2.0-85140141728&origin=inward&txGid=49c63a03e57ede092588efb5eed0dad1 https://jcr.clarivate.com/jcr-jp/journal-profile?journal=MAT%20SCI%20SEMICON%20PROC&year=2023 https://www.webofscience.com/wos/woscc/full-record/WOS:000879888700003
• Preparation of BaSnO3 target material for pulsed laser deposition [Online resource]Abdalla, Akram; Bereznev, Sergei; Volobujeva, Olga; Mikli, ValdekTartu Ülikooli ASTRA projekt PER ASPERA : Funktsionaalsed materjalid ja tehnoloogiad : [7-8 märtsil 2018, Tallinn : teesid] GSFMT Scientific Conference 2018 : Tallinn, March 7-8, 2018 : abstracts2018 / 1 p http://fmtdk.ut.ee/teesid-2018/
• Pulsed laser deposition of Zn(O,Se) layers for optoelectronic applicationPolivtseva, Svetlana; Spalatu, Nicolae; Abdalla, Akram; Volobujeva, Olga; Hiie, Jaan; Bereznev, SergeiACS Applied Energy Materials2018 / p. 6505–6512 : ill http://dx.doi.org/10.1021/acsaem.8b01431
• Pulsed laser deposition of Zn(O,Se) layers in nitrogen background pressureAbdalla, Akram; Bereznev, Sergei; Spalatu, Nicolae; Volobujeva, Olga; Sleptšuk, Natalja; Danilson, MatiScientific reports2019 / art. 17443, 10 p. : ill https://doi.org/10.1038/s41598-019-54008-1 https://www.scopus.com/sourceid/21100200805 https://www.scopus.com/record/display.uri?eid=2-s2.0-85075551305&origin=inward&txGid=f8d9cd263cdd74acbdc8d84687883cf0 https://jcr.clarivate.com/jcr-jp/journal-profile?journal=SCI%20REP-UK&year=2022 https://www.webofscience.com/wos/woscc/full-record/WOS:000498545900001
• Zn(O,Se) as a novel buffer layer for thin film solar cellsAbdalla, Akram; Polivtseva, Svetlana; Spalatu, Nicolae; Volobujeva, Olga; Hiie, Jaan; Bereznev, SergeiTartu Ülikooli ASTRA projekt PER ASPERA : Funktsionaalsed materjalid ja tehnoloogiad : [4.-5. veebr. 2019, Tartu : teesid]2019 http://fmtdk.ut.ee/teesid-2019/
• The effect of laser fluences on the structural and optoelectronic properties of Zn(O,Se) filmsAbdalla, Akram; Kärber, Erki; Mikli, Valdek; Bereznev, SergeiMaterials science in semiconductor processing2021 / art. 105429, 5 p. : ill https://doi.org/10.1016/j.mssp.2020.105429 https://www.scopus.com/sourceid/26675 https://www.scopus.com/record/display.uri?eid=2-s2.0-85091056021&origin=inward&txGid=64615d735ee242d4ccbc4a2b1e361262 https://jcr.clarivate.com/jcr-jp/journal-profile?journal=MAT%20SCI%20SEMICON%20PROC&year=2022 https://www.webofscience.com/wos/woscc/full-record/WOS:000585293900005