• A DLTS study of 4H-SiC-based p-n junctions fabricated by boron implantationIvanov, Pavel; Potapov, Alexander; Samsonova, Tatyana; Korolkov, Oleg; SleptÅ¡uk, NataljaSemiconductors2011 / p. 1306-1310 : ill https://doi.org/10.1134/S1063782611100101