• Dedicated to the memory of Prof. M. Sheinkman effect of ultrasonic treatment on the defect structure of the Si-SiO2 systemKropman, Daniel; Dolgov, Sergei; Onufrijevs, Pavels; Dauksta, EdvinsGettering and Defect Engineering in Semiconductor Technology XV2014 / p. 352-357 : ill https://doi.org/10.4028/www.scientific.net/SSP.205-206.352 https://www.scopus.com/sourceid/21100305259 https://www.scopus.com/record/display.uri?eid=2-s2.0-84886782662&origin=inward&txGid=689574b4b5c8f661d063627c2f2df3e1 https://jcr.clarivate.com/jcr-jp/journal-profile?journal=SOLID%20STATE%20PHENOM&year=2005 https://www.webofscience.com/wos/woscc/full-record/WOS:000336338000051
• Stress relaxation mechanism by strain in the Si-SiO2 system and its influence on the interface propertiesKropman, Daniel; Mellikov, Enn; Kärner, Tiit; Laas, Tõnu; Medvid, Arthur; Onufrijevs, Pavels; Dauksta, EdvinsSolid state phenomena2011 / p. 259-262 https://globaljournals.org/GJSFR_Volume17/1-Stresses-Relaxation-Mechanism.pdf