• A DLTS study of 4H-SiC-based p-n junctions fabricated by boron implantationIvanov, Pavel; Potapov, Alexander; Samsonova, Tatyana; Korolkov, Oleg; Sleptšuk, NataljaSemiconductors2011 / p. 1306-1310 : ill https://doi.org/10.1134/S1063782611100101
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• Low-temperature annealing of lightly doped n-4H-SiC layers after irradiation with fast electronsKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSemiconductors2019 / p. 975−978 https://doi.org/10.1134/S1063782619070133 https://www.scopus.com/sourceid/29834 https://www.scopus.com/record/display.uri?eid=2-s2.0-85068585613&origin=inward&txGid=3377015e7d50ef7770bff2c1af848b0e https://jcr.clarivate.com/jcr-jp/journal-profile?journal=SEMICONDUCTORS%2B&year=2022 https://www.webofscience.com/wos/woscc/full-record/WOS:000474481600021