• Analysis of barrier inhomogeneities of P-type Al/4H-SiC Schottky barrier diodesZiko, Mehadi Hasan; Koel, Ants; Rang, Toomas; Toompuu, JanaSilicon Carbide and Related Materials 2019 : Selected peer-reviewed papers from International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan Materials science forum2020 / p. 960-972 https://doi.org/10.4028/www.scientific.net/MSF.1004.960 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-85089802997&origin=inward&txGid=d9ea1cc1bb56f121c6b9ca0d87873517
• Investigation of barrier inhomogeneities and electronic transport on Al-Foil/p-Type-4H-SiCSchottky barrier Diodes using diffusion weldingZiko, Mehadi Hasan; Koel, Ants; Rang, Toomas; Rashid, Muhammad HaroonCrystals2020 / p. 636-647 https://doi.org/10.3390/cryst10080636 https://www.scopus.com/sourceid/21100316020 https://www.scopus.com/record/display.uri?eid=2-s2.0-85090619124&origin=inward&txGid=e6076fc88d9f36281f74d53495b1c0bd https://jcr.clarivate.com/jcr-jp/journal-profile?journal=CRYSTALS&year=2022 https://www.webofscience.com/wos/woscc/full-record/WOS:000567339200001
• Modeling and simulations of 4H-SiC/6H-SiC/4H-SiC single quantum-well light emitting diode using diffusion bonding techniqueRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasMicromachines2021 / art. 1499 https://doi.org/10.3390/mi12121499 https://www.scopus.com/sourceid/21100229176 https://www.scopus.com/record/display.uri?eid=2-s2.0-85120832822&origin=inward&txGid=bc0851c7a10e0969a162e223c838be39 https://jcr.clarivate.com/jcr-jp/journal-profile?journal=MICROMACHINES-BASEL&year=2022 https://www.webofscience.com/wos/woscc/full-record/WOS:000736239600001
• Nano and micro-scale simulations of Si/4H-SiC and Si/3C-SiC NN-heterojunction diodesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon Carbide and Related Materials 2018 : 12thEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK2019 / p. 357–361 https://doi.org/10.4028/www.scientific.net/MSF.963.357 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-85071843869&origin=inward&txGid=57f6b4e5e5ed4d8b6319161fe45a7730
• Numerical analysis of the influence of deep energy level traps in SiC Schottky structuresKoel, Ants; Rang, Toomas; Rang, GalinaHigh performance structure and materials. VI2012 / p. 439-448 : ill
• The measurement and tuning of SiC diode voltage doubler represented as diffusion-welded stack [Online resource]Toompuu, Jana; Sleptšuk, Natalja; Land, Raul; Korolkov, Oleg; Rang, ToomasBEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 20182018 / 4 p.: ill https://doi.org/10.1109/BEC.2018.8600963
• The specificity of solid-phase interaction of aluminium with silicon carbide in the manufacture of diffusion-welded contacts to semiconductor devicesSleptšuk, Natalja; Korolkov, Oleg; Toompuu, Jana; Rang, Toomas; Mikli, ValdekElektronika ir elektrotechnika = Electronics and electrical engineering2012 / p. 45-48 : ill https://eejournal.ktu.lt/index.php/elt/article/view/2610