• A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiCVelmre, Enn; Udal, AndresAbstracts of International Conference on Silicon Carbide and Related Materials : ICSCRM'99 : October 10-15, 1999, Research Triangle Park, North-Carolina, USA1999 / paper no 395, 2 p https://www.researchgate.net/publication/250338907_A_Theoretical_Study_of_Electron_Drift_Mobility_Anisotropy_in_n-Type_4H-and_6H-SiC
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• Ambient temperature influence on current suppressing effect caused by self-heating phenomenon at 6H-SiC Schottky interfacesKurel, Raido; Rang, ToomasBEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedings1998 / p. 253-254: ill
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• An experimental study of diffusion welded contacts to p-type silicon carbideKorolkov, OlegTelekommunikatsioon 2002 : IX rahvusvahelise telekommunikatsioonipäeva materjalid2002 / lk. 21-23 : ill
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• Charge carrier transport in SiC Schottky interfaces : shape factor approachKurel, Raido; Rang, Toomas; Rang, Galina; Kasemaa, ArgoBEC 2008 : 2008 International Biennial Baltic Electronics Conference : proceedings of the 11th Biennial Baltic Electronics Conference : Tallinn University of Technology : October 6-8, 2008, Tallinn, Estonia2008 / p. 87-90 : ill
• Clamp mode package diffusion welded power SiC Schottky diodesKorolkov, Oleg; Kuznetsova, Natalja; Rang, ToomasBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 55-58 : ill
• Combustion synthesis of nanoscale boron and silicon carbidesZakaryan, Marieta; Amirkhanyan, Narine; Kirakosyan, Hasmik; Zurnachyan, Alina; Aydinyan, SofiyaCIMTEC 2022 : 15th International Ceramics Congress (June 20-24) CIMTEC 2022 : 9th Forum on New Materials (June 25-29)2022 http://2022.cimtec-congress.org/focused-session-ca-11_1
• Combustion synthesis of silicon carbide by magnesio-carbothermic reduction of amorphous and crystalline silicaKirakosyan, Hasmik; Nazaretyan, Khachik; Beglaryan, Hayk; Ivanov, Roman; Hussainova, Irina; Aydinyan, SofiyaProceedings of the Estonian Academy of Sciences2025 / p. 260-265 https://doi.org/10.3176/proc.2025.2.31
• Comparative characteristics of 6H- and 4H-SiC surfaces in diffusion weldingKorolkov, Oleg; Rang, ToomasProceedings of the Estonian Academy of Sciences. Engineering2001 / 4, p. 347-353 : ill
• Comparative characteristics of diffusion-welded high-voltage stacks and connected in series Schottky diodesSleptšuk, Natalja; Korolkov, Oleg; Land, Raul; Toompuu, Jana; Annus, Paul; Rang, ToomasBEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia2016 / p. 39-42 : ill http://www.ester.ee/record=b2150914*est
• Comparison of individual SiC JBS chips and JBS stacks connected in series by diffusion weldingSleptšuk, Natalja; Korolkov, Oleg; Toompuu, Jana; Rang, ToomasBEC 2010 : 2010 12th Biennial Baltic Electronics Conference : proceedings of the 12th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 4-6, 2010, Tallinn, Estonia2010 / p. 81-84 : ill
• Comparison of Schottky parameters for diffusion-welded and sputter contacts to silicon carbideKuznetsova, NataljaInfo- ja kommunikatsioonitehnoloogia doktorikooli IKTDK teise aastakonverentsi artiklite kogumik : 11.-12. mai 2007, Viinistu kunstimuuseum2007 / lk. 162-165 : ill
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• Comparison of the dynamic behaviour of complementary 6H- and 4H-SiC Schottky structures using numerical simulationRang, Toomas; Kurel, RaidoProceedings of the Estonian Academy of Sciences. Engineering2004 / 3, p. 173-178
• Complementary multi guard ring JBS structures: numerical analysisKoel, Ants; Rang, Toomas; Rang, GalinaBEC 2010 : 2010 12th Biennial Baltic Electronics Conference : proceedings of the 12th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 4-6, 2010, Tallinn, Estonia2010 / p. 85-88 : ill
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• Current suppressing effect in alloy metal and 6H-SiC substrate Schottky contactsRang, Toomas; Blum, AlfonsBEC'96 : the 5th Biennial Baltic Electronics Conference, October 7-11, 1996, Tallinn, Estonia : proceedings1996 / p. 81-84: ill
• Degradation of 600-V 4H-SiC Schottky diodes under irradiation with 0.9 MeV electronsLebedev, Alexander A.; Davidovskaja, Klavdia; Kozlovski, Vitali V.; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, JanaSilicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece2017 / p. 447-450 : ill https://doi.org/10.4028/www.scientific.net/MSF.897.447 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-85019977029&origin=inward&txGid=cac2b46fb29177c3805ee39a6870556e
• Degragation of 600-V 4H-SiC Schottky diodes under irradation with 0,9 MeV electronsLebedev, Alexander A.; Davydovskaja, K. S.; Kozlovski, Vitali V.; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, Jana11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]2016 / p. 49
• Diffusion welding contacts to 6H-SiC substratesKorolkov, Oleg; Rang, Toomas43. Internationales Wissenschaftliches Kolloquium, 21.-24.09.19981998 / p. 47-48
• Diffusion welding techniques for power SiC Schottky packagingKorolkov, Oleg; Rang, Toomas; Syrkin, A.; Dmitriev, V.Final programm of the 12th International Conference on Silicon Carbide and Related Materials : ICSCRM2005 : Pittsburgh, PA, USA2005 / p. 71
• Diffusion welding techniques for power SiC Schottky packagingKorolkov, Oleg; Rang, Toomas; Syrkin, A.; Dmitriev, V.Silicon carbide and related materials 20052006 / p. 919-922
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• Electron microscopy study of contact layers in n-type 4H-SiC after diffusion weldingKorolkov, Oleg; Sleptšuk, Natalja; Sitnikova, A.; Rang, ToomasBEC 2008 : 2008 International Biennial Baltic Electronics Conference : proceedings of the 11th Biennial Baltic Electronics Conference : Tallinn University of Technology : October 6-8, 2008, Tallinn, Estonia2008 / p. 91-94 : ill
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• Formation of Diffusion welded Al contacts to semiconductor silicon carbideKorolkov, Oleg2004
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• Formation of large area Al contacts on 6H- and 4H-SiC substratesKorolkov, Oleg; Rang, ToomasAbstracts of the 3rd European Conference on Silicon Carbide and Related Materials : ECSCRM'2000 : Sept. 3-7, 2000, Kloster Banz, Germany2000 / p. 188 https://www.scientific.net/MSF.353-356.603
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• Investigation of charge carrier lifetime temperature-dependence in 4H-SiC diodesVelmre, Enn; Udal, AndresSilicon carbide and related materials 20062007 / p. 375-378 https://www.researchgate.net/publication/250348987_Investigation_of_Charge_Carrier_Lifetime_Temperature-Dependence_in_4H-SiC_Diodes
• Investigation of electrical characteristics of SiC based complementary JBS structuresKurel, Raido2005 https://www.ester.ee/record=b2053292*est
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• Investigation of subcontact layers in SiC after diffusion weldingKorolkov, Oleg; Kuznetsova, Natalja; Sitnikova, A.; Viljus, Mart; Rang, ToomasSilicon carbide and related materials2007 / p. 100 https://www.scientific.net/MSF.600-603.647
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• Measurements of charge carrier lifetime temperature dependence in 4H-SiC power diodesVelmre, Enn; Udal, AndresAbstracts of International Conference on Silicon Carbide and Related Materials : ICSCRM'99 : October 10-15, 1999, Research Triangle Park, North-Carolina, USA1999 / paper no 394, 2 p https://www.researchgate.net/publication/240833834_Measurement_of_Charge_Carrier_Lifetime_Temperature-Dependence_in_4H-SiC_Power_Diodes
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• Modelling of inhomogeneities of SiC Schottky interfacesRang, ToomasSoftware for Electrical Engineering Analysis and Design V : [Fifth International Conference ... : Electrosoft V]2001 / p. 3-15 : ill https://www.witpress.com/Secure/elibrary/papers/ES01/ES01000FU.pdf
• Nano- and Micro-Scale simulations of Ge/3C-SiC and Ge/4H-SiC NN-heterojunction diodesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 2019 Materials science forum2020 / p. 490-496 https://doi.org/10.4028/www.scientific.net/MSF.1004.490 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-85089810011&origin=inward&txGid=62ac56cc823cce52f96865de6b58557f
• Nano and micro-scale simulations of Si/4H-SiC and Si/3C-SiC NN-heterojunction diodesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon Carbide and Related Materials 2018 : 12thEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK2019 / p. 357–361 https://doi.org/10.4028/www.scientific.net/MSF.963.357 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-85071843869&origin=inward&txGid=57f6b4e5e5ed4d8b6319161fe45a7730
• Nanoscale and microscale simulations of N-N junction heterostructures of 3C-4H silicon carbideRashid, Muhammad Haroon; Koel, Ants; Rang, Toomas; Gähwiler, Reto; Grosberg, Martin; Jõemaa, RaunoMaterials and contact characterisation VIII2017 / p. 235-248 : ill https://doi.org/10.2495/MC170241 https://www.scopus.com/sourceid/6000195382 https://www.scopus.com/record/display.uri?eid=2-s2.0-85039063073&origin=inward&txGid=ae51660a8a9b7f5fa98eaa8bca050af1
• Non-destructive eddy current measurments for silicon carbide heterostructure analysisSahakyan, Armen; Koel, Ants; Rang, ToomasMaterials and contact characterisation VIII2017 / p. 49-60 : ill https://doi.org/10.2495/MC170061 https://www.scopus.com/sourceid/6000195382 https://www.scopus.com/record/display.uri?eid=2-s2.0-85039058119&origin=inward&txGid=72f8ed67790fde317966170b760cdd41
• Numerical analysis of the influence of deep energy level traps in SiC Schottky structuresKoel, Ants; Rang, Toomas; Rang, GalinaHigh performance structure and materials. VI2012 / p. 439-448 : ill
• Numerical investigation of SiC devices performance considering the incomplecte dopant ionizationVelmre, Enn; Udal, AndresSilicon carbide and related materials 20052006 / p. 1383-1386 https://www.scientific.net/MSF.527-529.1383
• Numerical simulation of a silicon carbide diodeVelmre, Enn; Udal, AndresBEC : Baltic Electronics Conference : proceedings of the 4th Biennial Conference, October 9-14, 1994, Tallinn (Estonia). 21994 / p. 559-566: ill https://www.ester.ee/record=b2150914*est
• Numerical simulation of P-type Al/4H-SiC Schottky barrier diodes [Online resource]Ziko, Mehadi Hasan; Koel, Ants; Rang, ToomasBEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 20182018 / 4 p.: ill https://doi.org/10.1109/BEC.2018.8600976
• Numerical simulations of wideband SiC N-N heterostructure diodePatankar, Udayan Sunil; Koel, Ants; Pardy, TamasLAEDC 2020 : Latin American Electron Devices Conference, San José, Costa Rica, February 25-28, 20202020 / 4 p https://doi.org/10.1109/LAEDC49063.2020.9073489
• Numerical study of current crowding phenomenon in complementary 4H-SiC JBS rectifiersRang, Toomas; Higelin, G.; Kurel, RaidoSilicon Carbide and Related Materials 20032004 / p. 1045-1048 https://www.scientific.net/MSF.457-460.1045
• On dead-time optimization and active gate driving in flyback converters with synchronous rectifiersPhilipps, Daniel; Blinov, Andrei; Peftitsis, DimosthenisIEEE Access2024 / p. 173146-173155 https://doi.org/10.1109/ACCESS.2024.3462956
• Oxidation-abrasion of TiC-based cermets in SiC mediumAntonov, Maksim; Hussainova, Irina; Kübarsepp, Jakob; Traksmaa, RainerWear2011 / p. 23-31 : ill
• Parametric simulation of SiC Schottky JBC structuresRang, Toomas; Kurel, RaidoComputer methods and experimental measurements for surface effects and contact mechanics VIII2007 / p. 315-334 https://www.witpress.com/Secure/elibrary/papers/SECM07/SECM07030FU1.pdf
• Polytypic heterojunctions for wide bandgap semiconductor materialsShenkin, Mikhail; Korolkov, Oleg; Rang, Toomas; Rang, GalinaMaterials characterization VII2015 / p. 273-282 : ill
• Preliminary approach to the timing measurements for reverse recovery applied to the SiC Schottky diode modelPikkov, MihhailThe 7th Biennial Conference on Electronics and Microsystem Technology "Baltic Electronics Conference" : BEC 2000 : October 8 - 11, 2000, Tallinn, Estonia : conference proceedings2000 / p. 321-322 : ill
• Preliminary investigation of diffusion welded contacts to p-type 6H-SiCKorolkov, Oleg; Rang, Toomas; Kuznetsova, Natalja; Ruut, JanaBEC 2002 : proceedings of the 8th Biennial Baltic Electronics Conference : October 6-9, 2002, Tallinn, Estonia2002 / p. 55-56 : ill
• Ränikarbiidil põhinevate jõupooljuhtseadiste disain ja karakteriseerimineRang, Toomas; Rang, GalinaTeadusmõte Eestis. 4, Tehnikateadused. 22007 / lk. 121-131 : ill
• Self-heating phenomenon and current suppressing effect at 6H-SiC Schottky interfacesKurel, Raido; Rang, ToomasProceedings of the 5th NEXUSPAN Workshop on Thermal Aspects in Microsystem Technology, 6-8 May 1998, Budapest, Hungary1998 / p. 88-91 https://www.witpress.com/elibrary/wit-transactions-on-engineering-sciences/22/5010
• Self-heating phenomenon and current suppressing effect at the SiC Schottky interfacesRang, Toomas; Kurel, RaidoSoftware for electrical engineering analysis and design. IV1999 / p. 153-162: ill https://www.witpress.com/elibrary/wit-transactions-on-engineering-sciences/22/5010
• Self-Propagating High-Temperature Synthesis of Silicon Carbide Using Reactions Thermokinetic Coupling ApproachAmirkhanyan, Narine; Kirakosyan, Hasmik; Zakaryan, Marieta; Zurnachyan, Alina; Aydinyan, SofiyaEC-SILICONF2 : The 2nd European Conference on Silicon and Silica Based Materials, Hungary, October 4-8, 20212021 / p. 118
• SiC Schottky diode for use in power convertorsPikkov, Mihhail; Rang, Toomas; Pokatilov, AndreiBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 245-246 : ill
• SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSilicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece2017 / p. 697-700 : ill https://doi.org/10.4028/www.scientific.net/MSF.897.697 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-85019975531&origin=inward&txGid=18ad7dd3df87b9328e380608cc81401c
• SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, Toomas11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]2016 / p. 42
• SiC и GaAs диоды в устройствах силовой электроникиBlinov, Andrei; Vinnikov, Dmitri; Rang, ToomasТехнiчна електродинамiка : тематичний випуск : силова електрониiка та енергоефективнiсть2012 / с. 42-46 : ил
• SiC-diode forward surge current failure mechanisms : experiment and simulationVelmre, Enn; Udal, AndresESREF'97 : proceedings of the 8th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct. 7-10, 1997, Bordeaux, France1997 / p. 1671-1674 https://www.sciencedirect.com/science/article/abs/pii/S0026271497001364
• Silicon carbide - new challenge for power semiconductor devicesRang, Toomas; Rang, Galina2nd International Symposium "Topical Problems of Education in the Field of Electrical and Power Engineering" : Kuressaare, Estonia, January 17-22, 20052005 / p. 36-42 : ill
• Simulations of heterostructures based on 3C-4H and 6H-4H silicon carbide polytypesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon carbide and related materials 2017 : ICSCRM 2017 : selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and related materials, September 17-22, 2017, Washington, DC, USA2018 / p. 302-305 : ill https://doi.org/10.4028/www.scientific.net/MSF.924.302 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-85049022397&origin=inward&txGid=431a5ddd113d435bad943ef29ceddde9
• Sintering of silicon carbide obtained by combustion synthesisAmirkhanyan, Narine; Kirakosyan, Hasmik; Zakaryan, Marieta; Zurnachyan, Alina; Rodriguez, Miguel Angel; Abovyan, L.; Aydinyan, SofiyaCeramics international2023 / p. 26129-26134 https://doi.org/10.1016/j.ceramint.2023.04.233 https://www.scopus.com/sourceid/21522 https://www.scopus.com/record/display.uri?eid=2-s2.0-85159163703&origin=inward&txGid=8e065e65b0005b77294601d466a2fc53 https://jcr.clarivate.com/jcr-jp/journal-profile?journal=CERAM%20INT&year=2023 https://www.webofscience.com/wos/woscc/full-record/WOS:001022877700001
• Some comparative properties of diffusion-welded contacts to 6H and 4H silicon carbideKorolkov, Oleg; Rang, ToomasSilicon Carbide and Related Materials 2001 : ICSCRM2001 : proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28 - November 2, 2001. Part 22002 / p. 941-944 : ill
• Some of comparative properties of diffusion welded contacts to 6H- and 4H-silicon carbideKorolkov, Oleg; Rang, ToomasInternational Conference on Silicon Carbide and Related Materials 2001 - ICSCRM2001 - October 28-November 2, 2001 (Epochal Tsukuba, Ibaraki, Japan) : technical digest2001 / p. 625-626 : ill https://www.researchgate.net/publication/250340293_Some_Comparative_Properties_of_Diffusion-Welded_Contacts_to_6H_and_4H_Silicon_Carbide
• Static and dynamic behavior of the SiC complementary JBS structuresKurel, Raido; Rang, ToomasBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 59-62 : ill
• ZrC-TiC-MoSi2 ceramic composite by spark plasma sinteringHussainova, Irina; Minasyan, Tatevik; Liu, Le; Aydinyan, SofiyaJournal of Physics: Conference Series2020 / art. 012028 https://doi.org/10.1088/1742-6596/1527/1/012028 https://www.scopus.com/sourceid/130053 https://www.scopus.com/record/display.uri?eid=2-s2.0-85086820932&origin=resultslist&sort=plf-f&src=s&sid=2fddd18ec3f656bf7ff5dfd107088ed5&sot=b&sdt=b&s=TITLE-ABS-KEY%28%22ceramic+composite+by+spark+plasma%22%29&sl=50&sessionSearchId=2fddd18ec3f656bf7ff5dfd107088ed5&relpos=0 https://www.webofscience.com/wos/woscc/full-record/WOS:000593872300028
• Temperature effects in alloy metal and 6H-SiC substrate Schottky contacts caused by the current suppressing effectRang, Toomas; Blum, AlfonsProceedings of the International Conference and Exhibition Micro Materials : MicroMat '97, April 16-18, 1997, Berlin, Germany1997 / p. 591-596
• The basic Schottky parameters for combined diffusion welded and sputter metal contactsKuznetsova, Natalja; Korolkov, Oleg; Rang, Toomas; Pikkov, MihhailBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 47-50 : ill
• The measurement and tuning of SiC diode voltage doubler represented as diffusion-welded stack [Online resource]Toompuu, Jana; Sleptšuk, Natalja; Land, Raul; Korolkov, Oleg; Rang, ToomasBEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 20182018 / 4 p.: ill https://doi.org/10.1109/BEC.2018.8600963
• The specificity of solid-phase interaction of aluminium with silicon carbide in the manufacture of diffusion-welded contacts to semiconductor devicesSleptšuk, Natalja; Korolkov, Oleg; Toompuu, Jana; Rang, Toomas; Mikli, ValdekElektronika ir elektrotechnika = Electronics and electrical engineering2012 / p. 45-48 : ill https://eejournal.ktu.lt/index.php/elt/article/view/2610
• Thermopower measurements in 4H-SiC and theoretical calculations considering the phonon drag effectGrivickas, V.; Stölzer, M.; Velmre, Enn; Udal, Andres; Grivickas, P.; Syväjärvi, M.; Yakimova, R.; Bikbajevas, V.Silicon Carbide and Related Materials : ECSCRM2000 : proceedings of the 3rd European Conference on Silicon Carbide and Related Materials : Kloster Banz, Germany, September 20002001 / p. 491-494 : ill https://www.researchgate.net/publication/240833914_Thermopower_Measurements_in_4H-SiC_and_Theoretical_Calculations_Considering_the_Phonon_Drag_Effect
• Thermopower measurements in 4H-SiC and Theoretical calculations considering the phonon drag effectGrivickas, V.; Stölzer, M.; Velmre, Enn; Udal, Andres; Grivickas, P.; Syväjärvi, M.; Yakimova, R.; Bikbajevas, V.Abstracts of the 3rd European Conference on Silicon Carbide and Related Materials : ECSCRM'2000 : Sept. 3-7, 2000, Kloster Banz, Germany2000 / p. 144
• Two dimensional modelling of alloy metal Schottky contacts to 6H-SiC substrateRang, Toomas; Blum, AlfonsProceedings of the ELECTROSOFT 96, May 28-30, San-Miniato, Italy1996 / p. 347-356
• Two-dimensional nonisothermal analysis of the current crowding effect at nonuniform SiC Schottky contacts using device simulator DYNAMIT-2DTKurel, Raido; Udal, AndresBEC 2002 : proceedings of the 8th Biennial Baltic Electronics Conference : October 6-9, 2002, Tallinn, Estonia2002 / p. 51-54 : ill
• Исследование p-n-переходов на основе 4H-SiC, изготовленных имплантацией бора, методом нестационарной емкостной спектроскопииIvanov, Pavel; Potapov, Alexander; Samsonova, Tatyana; Korolkov, Oleg; Sleptšuk, NataljaФизика и техника полупроводников2011 / с. 1358-1362 : ил
• Низкотемпературный отжиг слаболегированных слоев n-4H-SiC после облучения быстрыми электронамиKorolkov, Oleg; Kozlovski, Vitali; Lebedev, Alexander; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasФизика и техника полупроводников2019 / с. 991-994 https://doi.org/10.21883/FTP.2019.07.47879.9089