• Ambient temperature influence on current suppressing effect caused by self-heating phenomenon at 6H-SiC Schottky interfacesKurel, Raido; Rang, ToomasBEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedings1998 / p. 253-254: ill
• Analysis of barrier inhomogeneities of P-type Al/4H-SiC Schottky barrier diodesZiko, Mehadi Hasan; Koel, Ants; Rang, Toomas; Toompuu, JanaSilicon Carbide and Related Materials 2019 : Selected peer-reviewed papers from International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan Materials science forum2020 / p. 960-972 https://doi.org/10.4028/www.scientific.net/MSF.1004.960 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-85089802997&origin=inward&txGid=d9ea1cc1bb56f121c6b9ca0d87873517
• Analysis of peak current for current crowding effect in 4H- and 6H-SiC Schottky structuresKurel, Raido; Rang, ToomasThe 7th Biennial Conference on Electronics and Microsystem Technology "Baltic Electronics Conference" : BEC 2000 : October 8 - 11, 2000, Tallinn, Estonia : conference proceedings2000 / p. 235-236 : ill
• Analysis of the basic Schottky parameters for diffusion-welded aluminium contacts to p- and n-type SiCKorolkov, Oleg; Ljutov, Jevgeni; Kuznetsova, Natalja; Ruut, Jana; Rang, ToomasBEC 2004 : proceedings of the 9th Biennial Baltic Electronics Conference : October 3-6, 2004, Tallinn, Estonia2004 / p. 51-53 : ill
• Characterization of Interfaces Between the Metal Film and Silicon Carbide Semiconductor = Metallkontakti ja ränikarbiidi vahelise liidespinna karakteriseerimineZiko, Mehadi Hasan2021 https://digikogu.taltech.ee/et/Item/34be534c-63e8-4013-b271-eaf1a7cb22e7 https://www.ester.ee/record=b5471196*est https://doi.org/10.23658/taltech.52/2021
• Charge carrier transport in SiC Schottky interfaces : shape factor approachKurel, Raido; Rang, Toomas; Rang, Galina; Kasemaa, ArgoBEC 2008 : 2008 International Biennial Baltic Electronics Conference : proceedings of the 11th Biennial Baltic Electronics Conference : Tallinn University of Technology : October 6-8, 2008, Tallinn, Estonia2008 / p. 87-90 : ill
• Clamp mode package diffusion welded power SiC Schottky diodesKorolkov, Oleg; Kuznetsova, Natalja; Rang, ToomasBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 55-58 : ill
• Comparative characteristics of diffusion-welded high-voltage stacks and connected in series Schottky diodesSleptšuk, Natalja; Korolkov, Oleg; Land, Raul; Toompuu, Jana; Annus, Paul; Rang, ToomasBEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia2016 / p. 39-42 : ill http://www.ester.ee/record=b2150914*est
• Comparison of Schottky parameters for diffusion-welded and sputter contacts to silicon carbideKuznetsova, NataljaInfo- ja kommunikatsioonitehnoloogia doktorikooli IKTDK teise aastakonverentsi artiklite kogumik : 11.-12. mai 2007, Viinistu kunstimuuseum2007 / lk. 162-165 : ill
• Computer aided simulation of power Scottky DiodesRang, Toomas; Koel, Ants; Udal, AndresModeling, Simulation and Control1985 / p. 1-13
• Current crowding phenomenon in JBC structuresRang, Toomas; Kurel, Raido; Higelin, G.; Poirier, LaurentComputer Methods and Experimental Measurements for Surface Effects and Contact Mechanics VII2005 / p. 387-396 https://www.witpress.com/elibrary/wit-transactions-on-engineering-sciences/49/15383
• Current suppressing effect in alloy metal and 6H-SiC substrate Schottky contactsRang, Toomas; Blum, AlfonsBEC'96 : the 5th Biennial Baltic Electronics Conference, October 7-11, 1996, Tallinn, Estonia : proceedings1996 / p. 81-84: ill
• Degradation of 600-V 4H-SiC Schottky diodes under irradiation with 0.9 MeV electronsLebedev, Alexander A.; Davidovskaja, Klavdia; Kozlovski, Vitali V.; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, JanaSilicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece2017 / p. 447-450 : ill https://doi.org/10.4028/www.scientific.net/MSF.897.447 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-85019977029&origin=inward&txGid=cac2b46fb29177c3805ee39a6870556e
• Degragation of 600-V 4H-SiC Schottky diodes under irradation with 0,9 MeV electronsLebedev, Alexander A.; Davydovskaja, K. S.; Kozlovski, Vitali V.; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, Jana11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]2016 / p. 49
• Diffusion welding techniques for power SiC Schottky packagingKorolkov, Oleg; Rang, Toomas; Syrkin, A.; Dmitriev, V.Final programm of the 12th International Conference on Silicon Carbide and Related Materials : ICSCRM2005 : Pittsburgh, PA, USA2005 / p. 71
• Diffusion welding techniques for power SiC Schottky packagingKorolkov, Oleg; Rang, Toomas; Syrkin, A.; Dmitriev, V.Silicon carbide and related materials 20052006 / p. 919-922
• Formation of Diffusion welded Al contacts to semiconductor silicon carbideKorolkov, Oleg2004
• High voltage diffusion‐welded stacks on the basis of SiC Schottky diodesKorolkov, Oleg; Sleptšuk, Natalja; Annus, Paul; Land, Raul; Rang, ToomasICSRM 2015 : program guide2015 / p. 73
• High-voltage diffusion‐welded stacks on the basis of SiC Schottky diodesKorolkov, Oleg; Sleptšuk, Natalja; Annus, Paul; Land, Raul; Rang, ToomasSilicon carbide and related materials 2015 (ICSRM 2015) : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy2016 / p. 790-794 : ill https://doi.org/10.4028/www.scientific.net/MSF.858.790 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-84971524628&origin=inward&txGid=6ce68ec9f72641e6b96fc8bcb84e8564
• Hot spots caused by contact inhomogeneities in 4H- and 6H-SiC Schottky structuresKurel, Raido; Rang, ToomasAdvanced Computational Methods in Heat Transfer VI2000 / p. 437-444 https://www.witpress.com/elibrary/wit-transactions-on-engineering-sciences/27/4468
• Interpretation of some physical parameters of SiC Schottky interfaces manufactured by diffusion welding technologyRang, Toomas; Korolkov, Oleg; Ljutov, JevgeniProceedings of the Estonian Academy of Sciences. Engineering2004 / 3, p. 179-184
• Investigation of barrier inhomogeneities and electronic transport on Al-Foil/p-Type-4H-SiCSchottky barrier Diodes using diffusion weldingZiko, Mehadi Hasan; Koel, Ants; Rang, Toomas; Rashid, Muhammad HaroonCrystals2020 / p. 636-647 https://doi.org/10.3390/cryst10080636 https://www.scopus.com/sourceid/21100316020 https://www.scopus.com/record/display.uri?eid=2-s2.0-85090619124&origin=inward&txGid=e6076fc88d9f36281f74d53495b1c0bd https://jcr.clarivate.com/jcr-jp/journal-profile?journal=CRYSTALS&year=2022 https://www.webofscience.com/wos/woscc/full-record/WOS:000567339200001
• Investigation of deep level centers in i- and n-layers of GaAs pin-diodesToompuu, Jana; Korolkov, Oleg; Sleptšuk, Natalja; Rang, ToomasBEC 2014 : 2014 14th Biennial Baltic Electronics Conference : proceedings of the 14th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 6-8, 2014, Tallinn, Estonia2014 / p. 25-28 : ill
• Investigation of electrical characteristics of SiC based complementary JBS structuresKurel, Raido2005 https://www.ester.ee/record=b2053292*est
• Investigation of P-i-n GaAs structures by DLTS method : the deep level transient spectroscopy in application to GaAs p-i-n structures for identification of deep levelsToompuu, Jana2010 https://www.amazon.com/Investigation-p-i-n-GaAs-structures-method/dp/383839223X
• Investigation of the intermediate layer in the metal-silicon carbide contact obtained by diffusion welding = Difusioonkeevitusega valmistatud metalli ja ränikarbiidi vahelise üleminekuala vahekihi uurimineSleptšuk, Natalja2011 https://www.ester.ee/record=b2692547*est
• Large area 4H-SiC power Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailProceedings of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany2000 / p. 890-893
• Large area 6H-SiC Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailProceedings of the Estonian Academy of Sciences. Engineering2000 / 2, p. 155-159 : ill https://artiklid.elnet.ee/record=b1004045*est
• Modelling of inhomogeneities of SiC Schottky interfacesRang, ToomasSoftware for Electrical Engineering Analysis and Design V : [Fifth International Conference ... : Electrosoft V]2001 / p. 3-15 : ill https://www.witpress.com/Secure/elibrary/papers/ES01/ES01000FU.pdf
• Modelling of metal alloy contacts to semiconductor substrateRang, ToomasSimulation and design of microsystems and microstructures1995 / p. 251-258: ill https://www.witpress.com/Secure/elibrary/papers/MIC95/MIC95030FU.pdf
• Numerical analysis of the influence of deep energy level traps in SiC Schottky structuresKoel, Ants; Rang, Toomas; Rang, GalinaHigh performance structure and materials. VI2012 / p. 439-448 : ill
• Numerical simulation of P-type Al/4H-SiC Schottky barrier diodes [Online resource]Ziko, Mehadi Hasan; Koel, Ants; Rang, ToomasBEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 20182018 / 4 p.: ill https://doi.org/10.1109/BEC.2018.8600976
• Numerical study of turn-off phenomenon in complementary 4H-SiC JBS rectifiersRang, Toomas; Kurel, Raido; Higelin, G.BEC 2004 : proceedings of the 9th Biennial Baltic Electronics Conference : October 3-6, 2004, Tallinn, Estonia2004 / p. 47-50 : ill
• Numerical two-carrier simulation of the M-S (Schottky) structuresRang, ToomasResearch report : System Theory Laboratory of Electrical Engineering, University of the Saarland1985 / s. 62
• One-dimensional numerical simulation of complementary power Schottky structuresRang, ToomasIEE proceedings. Part I Solid-state and electron devices1985 / p. 253-256
• Parametric simulation of SiC Schottky JBC structuresRang, Toomas; Kurel, RaidoComputer methods and experimental measurements for surface effects and contact mechanics VIII2007 / p. 315-334 https://www.witpress.com/Secure/elibrary/papers/SECM07/SECM07030FU1.pdf
• Preliminary approach to the timing measurements for reverse recovery applied to the SiC Schottky diode modelPikkov, MihhailThe 7th Biennial Conference on Electronics and Microsystem Technology "Baltic Electronics Conference" : BEC 2000 : October 8 - 11, 2000, Tallinn, Estonia : conference proceedings2000 / p. 321-322 : ill
• Self-heating phenomenon and current suppressing effect at 6H-SiC Schottky interfacesKurel, Raido; Rang, ToomasProceedings of the 5th NEXUSPAN Workshop on Thermal Aspects in Microsystem Technology, 6-8 May 1998, Budapest, Hungary1998 / p. 88-91 https://www.witpress.com/elibrary/wit-transactions-on-engineering-sciences/22/5010
• Self-heating phenomenon and current suppressing effect at the SiC Schottky interfacesRang, Toomas; Kurel, RaidoSoftware for electrical engineering analysis and design. IV1999 / p. 153-162: ill https://www.witpress.com/elibrary/wit-transactions-on-engineering-sciences/22/5010
• SiC JBS diode symmetrical voltage doubler represented as the diffusion-welded stackKorolkov, Oleg; Land, Raul; Toompuu, Jana; Sleptšuk, Natalja; Rang, ToomasSilicon carbide and related materials 2017 : ICSCRM 2017 : selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and related materials, September 17-22, 2017, Washington, DC, USA2018 / p. 862–865 : ill https://doi.org/10.4028/www.scientific.net/MSF.924.862 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-85049003410&origin=inward&txGid=94311121790529c18109c5d884a7af58
• SiC Schottky diode for power convertersPikkov, Mihhail; Rang, ToomasPEDC 2001 : Power Electronics Devices Compatibility : 2nd conference : 3-5 September 2001, Zielona Gora, Poland2001 / p. 156-161 : ill
• SiC Schottky diode for use in power convertorsPikkov, Mihhail; Rang, Toomas; Pokatilov, AndreiBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 245-246 : ill
• SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, Toomas11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]2016 / p. 42
• SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSilicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece2017 / p. 697-700 : ill https://doi.org/10.4028/www.scientific.net/MSF.897.697 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-85019975531&origin=inward&txGid=18ad7dd3df87b9328e380608cc81401c
• Simulation of deep energy traps to explain the VAC temperature dependence anomaly of diffusion welded Schottky contactsKoel, Ants; Rang, Toomas; Rang, GalinaICSCRM2011 : Cleveland Ohio, USA, September 11-16, 2011 : abstracts2011 / p. 340 : ill
• Some of comparative properties of diffusion welded contacts to 6H- and 4H-silicon carbideKorolkov, Oleg; Rang, ToomasInternational Conference on Silicon Carbide and Related Materials 2001 - ICSCRM2001 - October 28-November 2, 2001 (Epochal Tsukuba, Ibaraki, Japan) : technical digest2001 / p. 625-626 : ill https://www.researchgate.net/publication/250340293_Some_Comparative_Properties_of_Diffusion-Welded_Contacts_to_6H_and_4H_Silicon_Carbide
• Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probeMizsei, Janos; Korolkov, Oleg; Toompuu, Jana; Rang, ToomasThe 9th European Conference on Silicon Carbide and Related Materials : abstract book : St. Petersburg Russia, 2-6 September, 20122012 / 2 p. : ill
• Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probeMizsei, Janos; Korolkov, Oleg; Toompuu, Jana; Mikli, Valdek; Rang, ToomasSilicon Carbide and Related Materials 2012 : selected peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation2013 / p. 677-680 : ill https://doi.org/10.4028/www.scientific.net/MSF.740-742.677 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-84874057454&origin=resultslist&sort=plf-f&src=s&sot=b&sdt=b&s=DOI%2810.4028%2Fwww.scientific.net%2FMSF.740-742.677%29&sessionSearchId=7c6b672404e1b83bceae9002c7d84c88 https://jcr.clarivate.com/jcr-jp/journal-profile?journal=MATER%20SCI%20FORUM&year=2005 https://www.webofscience.com/wos/woscc/full-record/WOS:000319785500161
• The basic parameters of diffusion welded Al Schottky contacts to p- and n-SiCKorolkov, Oleg; Ruut, Jana; Kuznetsova, Natalja; Rang, ToomasSilicon Carbide and Related Materials 20032004 / p. 857-860 https://doi.org/10.4028/www.scientific.net/MSF.457-460.857
• The basic Schottky parameters for combined diffusion welded and sputter metal contactsKuznetsova, Natalja; Korolkov, Oleg; Rang, Toomas; Pikkov, MihhailBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 47-50 : ill
• The dependence of reverse recovery time on barrier capacitance and series on-resistance in Schottky diodesVeher, Oleksandr; Sleptšuk, Natalja; Toompuu, Jana; Korolkov, Oleg; Rang, ToomasMaterials and contact characterisation VIII2017 / p. 15-22 : ill https://doi.org/10.2495/MC170021 https://www.scopus.com/sourceid/6000195382 https://www.scopus.com/record/display.uri?eid=2-s2.0-85039048136&origin=inward&txGid=4faea48be3ad1b3d32945f9ba70be5f6
• The Schottky parameter test for combined diffusion welded and sputter large area contactsKorolkov, Oleg; Kuznetsova, Natalja; Rang, Toomas; Syrkin, A.; Dmitriev, V.Silicon carbide and related materials2007 / p. 737-740 https://www.scientific.net/MSF.556-557.737
• Two dimensional modelling of alloy metal Schottky contacts to 6H-SiC substrateRang, Toomas; Blum, AlfonsProceedings of the ELECTROSOFT 96, May 28-30, San-Miniato, Italy1996 / p. 347-356
• Two-dimensional nonisothermal analysis of the current crowding effect at nonuniform SiC Schottky contacts using device simulator DYNAMIT-2DTKurel, Raido; Udal, AndresBEC 2002 : proceedings of the 8th Biennial Baltic Electronics Conference : October 6-9, 2002, Tallinn, Estonia2002 / p. 51-54 : ill
• Расчет туннельного тока в переходах металл - полупроводникRang, ToomasРасчет и проектирование измерительных преобразователей1983 / с. 69-74 : ил https://www.ester.ee/record=b1288985*est https://digikogu.taltech.ee/et/Item/4e3815a3-f217-4ae2-9776-1b5ea3c25959
• Численное моделирование диода шоттки на ЭВМRang, Toomas; Udal, AndresПроблемы моделирования полупроводниковых структур и сложных схем на ЭВМ1982 / с. 21-31 : ил https://www.ester.ee/record=b1339926*est https://www.etera.ee/zoom/121726/view?page=3&p=separate&search=true&tool=search
• Электрофизические свойства тонкопленочных барьеров шоттки на основе сульфида кадмия, изготовленного методом химической пульверизацииKrunks, Malle; Mellikov, Enn; Seilenthal, MatsЭлектрофизические свойства полупроводниковых и диэлектрических материалов1986 / с. 49-55