• Degragation of 600-V 4H-SiC Schottky diodes under irradation with 0,9 MeV electronsLebedev, Alexander A.; Davydovskaja, K. S.; Kozlovski, Vitali V.; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, Jana11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]2016 / p. 49
• Numerical analysis of the influence of deep energy level traps in SiC Schottky structuresKoel, Ants; Rang, Toomas; Rang, GalinaHigh performance structure and materials. VI2012 / p. 439-448 : ill
• SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, Toomas11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]2016 / p. 42
• SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSilicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece2017 / p. 697-700 : ill https://doi.org/10.4028/www.scientific.net/MSF.897.697 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-85019975531&origin=inward&txGid=18ad7dd3df87b9328e380608cc81401c
• Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probeMizsei, Janos; Korolkov, Oleg; Toompuu, Jana; Mikli, Valdek; Rang, ToomasSilicon Carbide and Related Materials 2012 : selected peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation2013 / p. 677-680 : ill https://doi.org/10.4028/www.scientific.net/MSF.740-742.677 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-84874057454&origin=resultslist&sort=plf-f&src=s&sot=b&sdt=b&s=DOI%2810.4028%2Fwww.scientific.net%2FMSF.740-742.677%29&sessionSearchId=7c6b672404e1b83bceae9002c7d84c88 https://jcr.clarivate.com/jcr-jp/journal-profile?journal=MATER%20SCI%20FORUM&year=2005 https://www.webofscience.com/wos/woscc/full-record/WOS:000319785500161
• The dependence of reverse recovery time on barrier capacitance and series on-resistance in Schottky diodesVeher, Oleksandr; Sleptšuk, Natalja; Toompuu, Jana; Korolkov, Oleg; Rang, ToomasMaterials and contact characterisation VIII2017 / p. 15-22 : ill https://doi.org/10.2495/MC170021 https://www.scopus.com/sourceid/6000195382 https://www.scopus.com/record/display.uri?eid=2-s2.0-85039048136&origin=inward&txGid=4faea48be3ad1b3d32945f9ba70be5f6