Measurement of charge carrier lifetime temperature-dependence in 4H-SiC power diodes
autor
vastutusandmed
Andres Udal and Enn Velmre
allikas
Proceedings of the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) : Research Triangle Park, North-Carolina, USA, Oct. 10-15, 1999. Vol. 1
ilmumiskoht
[S. l.]
kirjastus/väljaandja
ilmumisaasta
leheküljed
p. 781-784
TTÜ struktuuriüksus
keel
inglise
Udal, A., Velmre, E. Measurement of charge carrier lifetime temperature-dependence in 4H-SiC power diodes // Proceedings of the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) : Research Triangle Park, North-Carolina, USA, Oct. 10-15, 1999. Vol. 1. [S. l.] : Trans Tech Publications, 2000. p. 781-784.