Interaction of point defects with impurities in the Si-SiO2 system and its influence on the properties of the interface
autor
Kropman, Daniel
Mellikov, Enn
Lott, Kalju
Kärner, T.
Heinmaa, I.
vastutusandmed
D.Kropman, E.Mellikov, K.Lott, T.Kärner, I.Heinmaa [et al.].
allikas
Getterring and defect engineering in semiconductor technology XIII : CADEST 2009 : proceedings of the XIIIth International Autumn Meeting, Döllnsee-Schorfheide, north of Berlin, Germany, September 26 - October 02, 2009
ilmumiskoht
Stafa-Zurich
kirjastus/väljaandja
Trans Tech Publications
ilmumisaasta
2010
leheküljed
p. 145-148 : ill
leitav
https://www.sciencedirect.com/science/article/abs/pii/S0040609009014564
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