Measurement of charge carrier lifetime temperature dependence in 4H-SiC power diodes
autor
vastutusandmed
A. Udal, Enn Velmre
ilmumiskoht
[S.l.]
ilmumisaasta
leheküljed
paper no 394, 2 p
TTÜ struktuuriüksus
keel
inglise
Udal, A., Velmre, E. Measurement of charge carrier lifetime temperature dependence in 4H-SiC power diodes // Abstracts of International Conference on Silicon Carbide and Related Materials : ICSCRM'99 : October 10-15, 1999, Research Triangle Park, North-Carolina, USA. [S.l.], 1999. paper no 394, 2 p.