Solution processed high-K oxides for application as gate dielectric layer in thin film transistor
vastutusandmed
Abayomi Titilope Oluwabi, Atanas Katerski, Arvo Mare, Malle Krunks, Ilona Oja Acik
ilmumiskoht
Tartu
kirjastus/väljaandja
ilmumisaasta
leheküljed
p. 67 : ill
konverentsi nimetus, aeg
ASTRA „TTÜ Institutional Development Programme for 2016-2022“ : Graduate School of Functional materials and technologies Scientific Conference 2020, February 4-5, 2020
konverentsi toimumispaik
Park Inn by Radisson Meriton Conference & Spa Hotel, Tallinn
märkused
ASTRA „TTÜ Institutional Development Programme for 2016-2022“
FMTDK teaduskonverents 2020
TTÜ struktuuriüksus
keel
eesti
Oluwabi, A.T., Katerski, A., Mere, A., Krunks, M., Oja Acik, I. Solution processed high-K oxides for application as gate dielectric layer in thin film transistor // GSFMT Scientific Conference 2020 : Tallinn, February 4-5, 2020 : abstracts. Tartu : [s.n], 2020. p. 67 : ill.