A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiC
autor
Velmre, Enn
Udal, Andres
vastutusandmed
Enn Velmre, Andres Udal
allikas
Abstracts of International Conference on Silicon Carbide and Related Materials : ICSCRM'99 : October 10-15, 1999, Research Triangle Park, North-Carolina, USA
ilmumiskoht
[S.l.]
ilmumisaasta
1999
leheküljed
paper no 395, 2 p
konverentsi nimetus, aeg
International Conference on Silicon Carbide and Related Materials : ICSCRM'99 : October 10-15, 1999
konverentsi toimumispaik
Research Triangle Park, North-Carolina, USA
leitav
https://www.researchgate.net/publication/250338907_A_Theoretical_Study_of_Electron_Drift_Mobility_Anisotropy_in_n-Type_4H-and_6H-SiC
märksõna
anisotroopia
hajumine
elektronid
liikumine
ränikarbiid
ISSN
0255-5476
TTÜ struktuuriüksus
elektroonikainstituut
keel
inglise