täiskirje prindi

Stress relaxation mechanism by strain in the Si-SiO2 system and its influence on the interface properties

autor
vastutusandmed
Daniel Kropman, Enn Mellikov, Tiit Kärner, Tõnu Laas, Arthur Medvid, Pavels Onufrijevs, Edvins Dauksta
allikas
ajakirja aastakäik number kuu
Vol. 178/179
ilmumisaasta
leheküljed
p. 259-262
leitav
ISSN
1012-0394
keel
inglise
Kropman, D., Mellikov, E., Kärner, T., Laas, T., Medvid, A., Onufrijevs, P., Dauksta, E. Stress relaxation mechanism by strain in the Si-SiO2 system and its influence on the interface properties // Solid state phenomena (2011) Vol. 178/179, p. 259-262. https://globaljournals.org/GJSFR_Volume17/1-Stresses-Relaxation-Mechanism.pdf