Investigation of silicon carbide diode structures via numerical simulations including anisotropic effects
autor
vastutusandmed
E.Velmre, A.Udal, F.Masszi and E.Nordlander
allikas
Simulation of semiconductor devices and processes. Vol. 6
ilmumiskoht
Wien
kirjastus/väljaandja
ilmumisaasta
leheküljed
p. 340-343: ill
ISBN
978-3-7091-6619-2 (Online)
978-3-7091-7363-3
märkused
Bibl.: 7 ref
keel
inglise
võtmesõna
Diode Structure
Conductivity Anisotropy
Bottom Contact
Field Penetration Depth
Mobility Anisotropy
Velmre, E., Udal, A., Masszi, F., Nordlander, E. Investigation of silicon carbide diode structures via numerical simulations including anisotropic effects // Simulation of semiconductor devices and processes. Vol. 6. Wien : Springer, 1995. p. 340-343: ill.