A step félvezetőtechnológiai szimulációs programTarnay, K.; Drozdy, G.; Masszi, F.; Rang, ToomasMérés és automatika: megjelenik a Méréstechnikai és Automatizálási Tudományos Egyesület Szerkesztésében1981 / p. 460-464 A7 I²L kapu modellezese a TRAN-TRAN nemlineáris aramkölakalizös program segítségévelRang, ToomasHíradástechnika = Journal on communications, computers, convergence, contents, companies1980 / p. 216-220 Ambient temperature influence on current suppressing effect caused by self-heating phenomenon at 6H-SiC Schottky interfacesKurel, Raido; Rang, ToomasBEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedings1998 / p. 253-254: ill An analysis of critical parameters of SiC JBS structuresKurel, Raido; Rang, Toomas; Poirier, LaurentProceedings of the Estonian Academy of Sciences. Engineering2006 / 3-2, p. 284-299 : ill Analog front end components for bio-impedance measurement : current source design and implementation = Bioimpedantsi mõõteseadme analoogosa komponendid : vooluallika disain ja realisatsioonKasemaa, Argo2011 https://digi.lib.ttu.ee/i/?590 Analysis of barrier inhomogeneities of P-type Al/4H-SiC Schottky barrier diodesZiko, Mehadi Hasan; Koel, Ants; Rang, Toomas; Toompuu, JanaSilicon Carbide and Related Materials 2019 : Selected peer-reviewed papers from International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan Materials science forum2020 / p. 960-972 https://doi.org/10.4028/www.scientific.net/MSF.1004.960 Conference proceedings at Scopus Article at Scopus Analysis of deep level centers in GaAs pin-diode structuresKorolkov, Oleg; Toompuu, Jana; Rang, ToomasElektronika ir elektrotechnika = Electronics and electrical engineering2013 / [4 p. ] : ill https://doi.org/10.5755/j01.eee.19.10.5903 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS Analysis of deep level spectrum in GaAs p+-p-i-n-n+ structuresToompuu, Jana; Sleptšuk, Natalja; Korolkov, Oleg; Rang, ToomasMaterials characterization VII2015 / p. 283-294 : ill Analysis of peak current for current crowding effect in 4H- and 6H-SiC Schottky structuresKurel, Raido; Rang, ToomasThe 7th Biennial Conference on Electronics and Microsystem Technology "Baltic Electronics Conference" : BEC 2000 : October 8 - 11, 2000, Tallinn, Estonia : conference proceedings2000 / p. 235-236 : ill Analysis of the basic Schottky parameters for diffusion-welded aluminium contacts to p- and n-type SiCKorolkov, Oleg; Ljutov, Jevgeni; Kuznetsova, Natalja; Ruut, Jana; Rang, ToomasBEC 2004 : proceedings of the 9th Biennial Baltic Electronics Conference : October 3-6, 2004, Tallinn, Estonia2004 / p. 51-53 : ill Andursignaalide töötlemine ja andursüsteemid : metoodiline juhend1989 https://www.ester.ee/record=b1240066*est Andursignaalide töötlemine ja andursüsteemid : metoodiline juhend1988 https://www.ester.ee/record=b1239930*est Application of power line communication technology in street lighting controlFarkas, Tekla D.; Kiraly, Tamás; Pardy, Tamas; Rang, Toomas; Rang, GalinaInternational journal of design and nature and ecodynamics2018 / p. 176–186 : ill https://doi.org/10.2495/DNE-V13-N2-176-186 Journal metrics at Scopus Article at Scopus Article at WOS Arukad põhjendused pole veel kedagi veennud : [TTÜ arengutest tulevikus]Rang, ToomasMente et Manu2004 / 3. nov., lk. 2, 4 : fot https://www.ester.ee/record=b1242496*est ASIC for alcohol sensorKasemaa, Argo; Rang, ToomasBEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedings1998 / p. 283-286: ill Az I²L sztatikus zavar védettségeRang, ToomasMérés és automatika: megjelenik a Méréstechnikai és Automatizálási Tudományos Egyesület Szerkesztésében1980 / p. 466-468 Balti elektroonika konverents (BEC'96)Rang, ToomasSAT-Meedia ja Elektroonika1996 / 8, lk. 14-15: ill Balti elektroonikakonverents 2002 : [TTÜ elektroonikainstituudi korraldusel toimuvast rahvusvahelisest konverentsist BEC'2002]Rang, ToomasMente et Manu2002 / 8. okt., lk. 1 : ill https://www.ester.ee/record=b1242496*est Balti elektroonikakonverents BEC 2010Rang, ToomasTallinna Tehnikaülikooli aastaraamat 20102011 / lk. 279-280 Balti elektroonikakonverentsidRang, ToomasTallinna Tehnikaülikooli aastaraamat 20112012 / lk. 308-316 Baltic Electronics Conference 1996 : (BEC' 96)Rang, ToomasBaltic electronics1995 / 1, p. 38 Baltic Electronics Conference (BEC) series : long and winding roadRang, ToomasBEC 2010 : 2010 12th Biennial Baltic Electronics Conference : proceedings of the 12th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 4-6, 2010, Tallinn, Estonia2010 / p. 11-16 Baltic Electronics Conference BEC'96Rang, ToomasBaltic electronics1996 / 3, p. 25-26 BEC : Baltic Electronics Conference : proceedings of the 4th Biennial Conference, October 9-14, 1994, Tallinn (Estonia)Rang, Toomas; Min, Mart; Ubar, Raimund-Johannes1994 BEC 2002 : proceedings of the 8th Biennial Baltic Electronics Conference : October 6-9, 2002, Tallinn, EstoniaRang, Toomas2002 http://www.ester.ee/record=b2150914*est BEC 2004 : proceedings of the 9th Biennial Baltic Electronics Conference : October 3-6, 2004, Tallinn, Estonia2004 http://www.ester.ee/record=b2150914*est BEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics ConferenceRang, Toomas2006 http://www.ester.ee/record=b2150914*est BEC 2006 järelkajad : [intervjuu Toomas Rangiga elektroonikute konverentsi teemal]Rang, Toomas; Ummelas, MartMente et Manu2006 / 18. okt., lk. 2 : fot https://www.ester.ee/record=b1242496*est BEC 2008 : 2008 International Biennial Baltic Electronics Conference : proceedings of the 11th Biennial Baltic Electronics Conference : Tallinn University of Technology : October 6-8, 2008, Tallinn, EstoniaRang, Toomas2008 http://www.ester.ee/record=b2150914*est BEC 2010 : 2010 12th Biennial Baltic Electronics Conference : proceedings of the 12th Biennial Baltic Electronics Conference : Tallinn University of Technology : October 4-6, 2010, Tallinn, EstoniaRang, Toomas2010 http://www.ester.ee/record=b2150914*est BEC 2012 : 2012 13th Biennial Baltic Electronics Conference : proceedings of the 13th Biennial Baltic Electronics Conference : October 3-5, 2012, Tallinn, Estonia2012 http://www.ester.ee/record=b2150914*est BEC 2014 : 2014 14th Biennial Baltic Electronics Conference : proceedings of the 14th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 6-8, 2014, Tallinn, EstoniaRang, Toomas2014 http://www.ester.ee/record=b2150914*est BEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, EstoniaRang, Toomas2016 http://www.ester.ee/record=b2150914*est BEC'96 : the 5th Biennial Baltic Electronics Conference, October 7-11, 1996, Tallinn, Estonia : proceedingsRang, Toomas; Min, Mart; Ubar, Raimund-Johannes1996 https://www.ester.ee/record=b2150914*est BEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedingsRang, Toomas1998 https://www.ester.ee/record=b2150914*est Can 3D printing bring droplet microfluidics to every lab? - A systematic reviewGyimah, Nafisat; Scheler, Ott; Rang, Toomas; Pardy, TamasMicromachines2021 / art. 339 https://doi.org/10.3390/mi12030339 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS Change in the parameters of electron-irradiated 4H-SIC Schottky diodes as a function of the time during low-temperature isothermal annealingKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Toompuu, Jana; Sleptsuk, Natalja; Rang, ToomasSilicon Carbide and Related Materials 2018 : 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK2019 / p. 734-737 https://doi.org/10.4028/www.scientific.net/MSF.963.734 Conference proceeding at Scopus Article at Scopus Characterization of deep level traps in semiconductor structures using numerical experimentsKoel, Ants; Rang, Toomas; Rang, GalinaMaterials characterization VII2015 / p. 253-261 : ill Characterization of silicon carbide (SiC) and graphene-based novel semiconductor devices = Ränikarbiidil (SiC) ja grafeenil pōhinevate uudsete pooljuhtstruktuuride karakteriseerimineRashid, Muhammad Haroon2021 https://www.ester.ee/record=b5397240*est https://digikogu.taltech.ee/et/Item/a64fd50e-125c-49ad-b0a6-6ad2e01b8bfa https://doi.org/10.23658/taltech.6/2021 Characterization of the temperature dependent behavior of snappy phenomenon by the switching-off of GaAs power diode structuresKoel, Ants; Rang, Toomas; Rang, GalinaHeat transfer XIII : simulation and experiments in heat and mass transfer2014 / p. 439-449 : ill https://doi.org/10.2495/HT140381 Conference proceedings at Scopus Article at Scopus Charge carrier transport in SiC Schottky interfaces : shape factor approachKurel, Raido; Rang, Toomas; Rang, Galina; Kasemaa, ArgoBEC 2008 : 2008 International Biennial Baltic Electronics Conference : proceedings of the 11th Biennial Baltic Electronics Conference : Tallinn University of Technology : October 6-8, 2008, Tallinn, Estonia2008 / p. 87-90 : ill Circuit simulation program oriented physical modeling of integrated circuit elementsRang, Toomas; Tarnay, K.; Szekely, V.Periodica polytechnica. Electrical engineering = Электротехника1980 / p. 37-45 https://www.ester.ee/record=b1198855*est Clamp mode package diffusion welded power SiC Schottky diodesKorolkov, Oleg; Kuznetsova, Natalja; Rang, ToomasBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 55-58 : ill CMOS low power current source with reduced circuit complexityKasemaa, Argo; Rang, Toomas; Annus, PaulIEEE 9th International New Circuits and Systems Conference (NEWCAS) : Bordeaux-France, 26-29 June 2011 : [proceedings]2011 / p. 17-20 https://www.semanticscholar.org/paper/CMOS-low-power-current-source-with-reduced-circuit-Kasemaa-Rang/f5e490ce914a4c6c3195586a28147211c928c28d CMOS SP chip for resistor type semiconductor gas sensorsKasemaa, Argo; Rang, ToomasThe 7th Biennial Conference on Electronics and Microsystem Technology "Baltic Electronics Conference" : BEC 2000 : October 8 - 11, 2000, Tallinn, Estonia : conference proceedings2000 / p. 255-256 : ill CNN-Transformer Hybrid Model Towards Automated Droplet Image Quality Assessment of Portable Imaging Flow CytometerAfrin, Fariha; Ndubuisi Ezechukwu, Dismas; Le Moullec, Yannick; Pardy, Tamas; Rang, Toomas; Koel, AntsIEEE EUROCON 20252025 / 6 p Co-design of a wireless networked control system for reliability and resource-efficiencyAshraf, Kanwal; Le Moullec, Yannick; Pardy, Tamas; Rang, Toomas2024 19th Biennial Baltic Electronics Conference (BEC)2024 / 7 p https://doi.org/10.1109/BEC61458.2024.10737965 Co-design of wireless networked control systems : a reliable and resource-efficient approachAshraf, Kanwal; Le Moullec, Yannick; Pardy, Tamas; Rang, Toomastechrxiv.org2024 / 9 p. : ill https://www.techrxiv.org/users/693853/articles/683291-co-design-of-wireless-networked-control-systems-a-reliable-and-resource-efficient-approach Cogniflow-drop : integrated modular system for automated generation of droplets in microfluidic applicationsJõemaa, Rauno; Gyimah, Nafisat; Ashraf, Kanwal; Pärnamets, Kaiser; Zaft, Alexander; Scheler, Ott; Rang, Toomas; Pardy, TamasIEEE Access2023 / p. 104905-104929 https://doi.org/10.1109/ACCESS.2023.3316726 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS Compact empirical model for droplet generation in a Lab-on-Chip cytometry systemPärnamets, Kaiser; Udal, Andres; Koel, Ants; Pardy, Tamas; Gyimah, Nafisat; Rang, ToomasIEEE Access2022 / p. 127708-127717 https://doi.org/10.1109/ACCESS.2022.3226623 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS Comparative characteristics of 6H- and 4H-SiC surfaces in diffusion weldingKorolkov, Oleg; Rang, ToomasProceedings of the Estonian Academy of Sciences. Engineering2001 / 4, p. 347-353 : ill Comparative characteristics of diffusion welded Al contacts to 6H- and 4H-SiC substratesKorolkov, Oleg; Rang, ToomasThe 7th Biennial Conference on Electronics and Microsystem Technology "Baltic Electronics Conference" : BEC 2000 : October 8 - 11, 2000, Tallinn, Estonia : conference proceedings2000 / p. 23-26 : ill Comparative characteristics of diffusion-welded high-voltage stacks and connected in series Schottky diodesSleptšuk, Natalja; Korolkov, Oleg; Land, Raul; Toompuu, Jana; Annus, Paul; Rang, ToomasBEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia2016 / p. 39-42 : ill http://www.ester.ee/record=b2150914*est Comparative investigation of the graphene-on-silicon carbide and CVD graphene as a basis for biosensor applicationSleptšuk, Natalja; Lebedev, Alexander A.; Eliseyev, Ilya; Korolkov, Oleg; Toompuu, Jana; Land, Raul; Mikli, Valdek; Zubov, Alexander; Rang, ToomasModern Materials and Manufacturing 2019 : 12th International DAAAM Baltic Conference and 27th International Baltic Conference BALTMATTRIB 2019. Selected, peer reviewed papers from the conference Modern Materials and Manufacturing 2019 (MMM 2019), April 24-26, 2019, Tallinn, Estonia2019 / p. 185-190 : ill https://www.ester.ee/record=b5235278*est https://www.scientific.net/KEM.799.185 https://doi.org/10.4028/www.scientific.net/KEM.799.185 Conference proceeding at Scopus Article at Scopus Comparison of GaAs based high voltage diode stacksVoitovitš, Viktor; Kuznetsova, Natalja; Rang, Toomas; Pikkov, Mihhail; Ruut, JanaEPE-PEMC 2004 : 11th International Power Electronics and Motion Control Conference : 2-4 September 2004, Riga, Latvia : proceedings. Vol. 2 of 7, Devices, control of converters, measurements and sensors2004 / p. 2-391 - 2-394 : ill Comparison of individual SiC JBS chips and JBS stacks connected in series by diffusion weldingSleptšuk, Natalja; Korolkov, Oleg; Toompuu, Jana; Rang, ToomasBEC 2010 : 2010 12th Biennial Baltic Electronics Conference : proceedings of the 12th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 4-6, 2010, Tallinn, Estonia2010 / p. 81-84 : ill Comparison of the dynamic behaviour of complementary 6H- and 4H-SiC Schottky structures using numerical simulationRang, Toomas; Kurel, RaidoProceedings of the Estonian Academy of Sciences. Engineering2004 / 3, p. 173-178 Comparison of turn-on characteristics of thyristor structures based on wide bandgap materialsRang, Toomas; Vaselo, Aleksandr; Rang, Galina; Pikkov, MihhailProceedings of the Estonian Academy of Sciences. Engineering2007 / 4, p. 445-454 : ill Complementary multi guard ring JBS structures: numerical analysisKoel, Ants; Rang, Toomas; Rang, GalinaBEC 2010 : 2010 12th Biennial Baltic Electronics Conference : proceedings of the 12th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 4-6, 2010, Tallinn, Estonia2010 / p. 85-88 : ill Computer aided examination of I²L structuresRang, ToomasInternational journal of electronics1981 / p. 445-463 https://doi.org/10.1080/00207218108901286 Computer aided examination of the avalanche multiplication in Si, GaA and IkP complementary pn-junctionsRang, ToomasModelling, simulation and control1985 / p. 23-40 Computer aided modeling of high frequency power M-S structuresRang, Toomas; Udal, AndresProceedings of the seventh Colloquium on Microwave Communication : Budapest, 6-10 Sept. 19821982 / p. 238-241 Computer aided simulation of dynamic behaviour of the I²L flip-flopRang, ToomasMicroelectronics '82 : proceedings of the 3. Microelectronics Conference of the Socialist Countries ; from 5.-7. May 1982, Siófok, Hungary1982 / p. 153-154 Computer aided simulation of power Scottky DiodesRang, Toomas; Koel, Ants; Udal, AndresModeling, Simulation and Control1985 / p. 1-13 Computer-aided examination of the I²L current source and the behaviour of the I²L flip-flop used in static memory cellsRang, ToomasPeriodica polytechnica. Electrical engineering = Электротехника1981 / p. 159-165 : joon https://www.ester.ee/record=b1198855*est https://pp.bme.hu/ee/article/view/4776/3881 Contact manufacturing technologies for wide band-gap semiconductor materials (invited)Rang, ToomasBEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedings1998 / p. 17-28: ill Current crowding phenomenon in JBC structuresRang, Toomas; Kurel, Raido; Higelin, G.; Poirier, LaurentComputer Methods and Experimental Measurements for Surface Effects and Contact Mechanics VII2005 / p. 387-396 https://www.witpress.com/elibrary/wit-transactions-on-engineering-sciences/49/15383 Current suppressing effect in alloy metal and 6H-SiC substrate Schottky contactsRang, Toomas; Blum, AlfonsBEC'96 : the 5th Biennial Baltic Electronics Conference, October 7-11, 1996, Tallinn, Estonia : proceedings1996 / p. 81-84: ill Deep reinforcement learning-based digital twin for droplet microfluidics controlGyimah, Nafisat; Scheler, Ott; Rang, Toomas; Pardy, TamasPhysics of Fluids2023 / art. 082020 https://doi.org/10.1063/5.0159981 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS Design of Cyber Bio-analytical Physical Systems : formal methods, architectures, and multi-system interaction strategiesAshraf, Kanwal; Le Moullec, Yannick; Pardy, Tamas; Rang, ToomasMicroprocessors and microsystems2023 / art. 104780, 14 p. : ill https://doi.org/10.1016/j.micpro.2023.104780 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS Design of two stage high efficiency power amplifier in 0.13um technology for 2.4 GHz ISM band applicationsPatankar, Udayan Sunil; Koel, Ants; Rang, ToomasJournal of Advanced Research in Dynamical and Control Systems2018 / p. 822–829 http://www.jardcs.org/backissues/abstract.php?archiveid=3585 Development of a low-cost, wireless smart thermostat for isothermal DNA amplification in lab-on-a-chip devicesPardy, Tamas; Sink, Henri; Koel, Ants; Rang, ToomasMicromachines2019 / art. 437, 13 p. : ill https://doi.org/10.3390/mi10070437 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS Development of automated detection and wireless reporting for a handheld point-of-care testPardy, Tamas; Filograno, Leonardo; Baumann, Cindy; Rang, Toomas2020 17th Biennial Baltic electronics conference, Tallinn, Estonia, October 6-8, 2020 : proceedings2021 / 4 p. : ill https://doi.org/10.1109/BEC49624.2020.9276773 Development of e-learning course: myths and realityRang, Toomas; Rang, GalinaSymposium "Topical Problems of Education in the Field of Electrical and Power Engineering" : Kuressaare, Estonia, January 19-24, 20042004 / p. 9-11 Development of national standard for voltage unit based on solid-state references = Pinge mõõtühiku riigietaloni arendamise Zener-tüüpi etalonpingeallikate baasilPokatilov, Andrei; Kübarsepp, Toomas2008 https://www.ester.ee/record=b2425069*est Development of temperature control solutions for non-instrumented nucleic acid amplification tests (NINAAT)Pardy, Tamas; Rang, Toomas; Tulp, IndrekMicromachines2017 / p. 1-11 : ill https://doi.org/10.3390/mi8060180 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS Diffusion welded Al contacts to p-type SiCKorolkov, Oleg; Rang, Toomas; Syrkin, A.; Dmitriev, V.Silicon Carbide and Related Materials 2002 : ECSCRM20022003 / p. 697-700 https://www.scientific.net/MSF.433-436.697 Diffusion welded contacts and related art applied to semiconductor materialsKorolkov, Oleg; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasElektronika ir elektrotechnika = Electronics and electrical engineering2011 / p. 67-70 : ill https://eejournal.ktu.lt/index.php/elt/article/view/359 Diffusion welded contacts for silicon semiconductor devicesKorolkov, Oleg; Rang, ToomasProceedings of the International Conference and Exhibition Micro Materials : MicroMat '97, April 16-18, 1997, Berlin, Germany1997 / p. 1035-1037 The diffusion welded contacts in power electronicsKorolkov, Oleg; Rang, ToomasBEC : Baltic Electronics Conference : proceedings of the 4th Biennial Conference, October 9-14, 1994, Tallinn (Estonia). 21994 / p. 573-578: ill https://www.ester.ee/record=b2150914*est Diffusion welding contacts to 6H-SiC substratesKorolkov, Oleg; Rang, Toomas43. Internationales Wissenschaftliches Kolloquium, 21.-24.09.19981998 / p. 47-48 Diffusion welding techniques for power SiC Schottky packagingKorolkov, Oleg; Rang, Toomas; Syrkin, A.; Dmitriev, V.Final programm of the 12th International Conference on Silicon Carbide and Related Materials : ICSCRM2005 : Pittsburgh, PA, USA2005 / p. 71 Diffusion welding techniques for power SiC Schottky packagingKorolkov, Oleg; Rang, Toomas; Syrkin, A.; Dmitriev, V.Silicon carbide and related materials 20052006 / p. 919-922 Diffusion welding technology as a method of metallization of ceramic substratesKorolkov, Oleg; Rang, ToomasBEC'96 : the 5th Biennial Baltic Electronics Conference, October 7-11, 1996, Tallinn, Estonia : proceedings1996 / p. 479-482: ill Diffusion welding technology for 6H-SiC substratesKorolkov, Oleg; Rang, ToomasBEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedings1998 / p. 251-252: ill Diffusion welding technology for wide bandgap materialsRang, Toomas; Korolkov, OlegProceedings of the European COPEX Seminar, June 17-19, 1997, Vienna, Austria1997 / p. 124-127 Digital twin for controlled generation of water-in-oil microdroplets with required sizeGyimah, Nafisat; Scheler, Ott; Rang, Toomas; Pardy, Tamas2022 23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 25-27 April 2022, St Julian, Malta : proceedings2022 / p. 85-91 https://doi.org/10.1109/EuroSimE54907.2022.9758876 DLTS measurements on 4H-SiC JBS-diodes with boron implanted local p-n junctionsIvanov, Pavel; Korolkov, Oleg; Samsonova, Tatyana; Sleptšuk, Natalja; Potapov, Alexander; Toompuu, Jana; Rang, ToomasMaterials science forum2011 / p. 409-412 https://www.researchgate.net/publication/272046403_DLTS_measurements_on_4H-SiC_JBS-diodes_with_boron_implanted_local_p-n_junctions Education environment for electronics and microsystemsAjaots, Maido; Min, Mart; Rang, Toomas; Ubar, Raimund-JohannesFirst European Workshop on Microelectronics Education, Villard de Lans, France, February 5-6, 1996 : proceedings1996 / p. 39 Education environment for electronics and microsystemsAjaots, Maido; Min, Mart; Rang, Toomas; Ubar, Raimund-JohannesMicroelectronics education : proceedings of the European Workshop, Grenoble, France, 5-6 Feb 19961996 / p. 145-148: ill Effects of the inclusion of armchair graphene nanoribbons on the electrical conduction properties of NN-heterojunction 4H-6H/SiC diodesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasAdvanced Materials and Processing Technologies : 2nd International Conference on Sensors, Materials and Manufacturing (ICSMM 2018, November 19-21, 2018, Taiwan); International Conference on Materials Sciences and Nanomaterials (ICMSN 2018, July 11-13, 2018, United Kingdom) and the 2nd International Conference on Materials and Intelligent Manufacturing (ICMIM 2018, August 24-26, 2018, Japan)2019 / p. 29–35 : ill https://doi.org/10.4028/www.scientific.net/MSF.962.29 Conference proceeding at Scopus Article at Scopus Ela ise ja lase ka teistel elada! : [T.Rangi nägemus Tehnikaülikooli arengust eelseisvaks viieks aastaks]Rang, ToomasMente et Manu2005 / 12. jaan., lk. 5-6. (TTÜ 2005-2010) https://www.ester.ee/record=b1242496*est Electron microscopy study of contact layers in n-type 4H-SiC after diffusion weldingKorolkov, Oleg; Sleptšuk, Natalja; Sitnikova, A.; Rang, ToomasBEC 2008 : 2008 International Biennial Baltic Electronics Conference : proceedings of the 11th Biennial Baltic Electronics Conference : Tallinn University of Technology : October 6-8, 2008, Tallinn, Estonia2008 / p. 91-94 : ill Electronics design and testUbar, Raimund-Johannes; Kruus, Margus; Rang, ToomasPublic service review : European Union. 132007 / p. 52-53 Electronics in EstoniaRang, ToomasBEC'96 : the 5th Biennial Baltic Electronics Conference, October 7-11, 1996, Tallinn, Estonia : proceedings1996 / p. 49-56: ill Elektroonika - mis see on?Rang, ToomasElektroonika 2004 : XI rahvusvahelise telekommunikatsioonipäeva materjalid2004 / lk. 7-9 Elektroonika Eestis - tööstus, haridus, teadusRang, ToomasTallinna Tehnikaülikooli aastaraamat 19961997 / lk. 221-230 Elektroonika Eestis - tööstus, teadus, haridus - järelmõtteidRang, ToomasInsenerikultuur Eestis. 31997 / lk. 139-147 https://www.ester.ee/record=b1063622*est Elektroonika kui Eesti innovatsioonisüsteemi infrastruktuurMin, Mart; Rang, Toomas; Ubar, Raimund-JohannesEesti teadlaste kongress, 11.-15. augustini 1996. a. Tallinnas : ettekannete kokkuvõtted1996 / lk. 265 https://www.ester.ee/record=b1052731*est Elektroonikainseneride harimisest meil ja mujalRang, ToomasElektroonika 2000 : VII rahvusvahelise telekommunikatsioonipäeva konverentsi ettekannete materjalid2000 / lk. 7-14 https://www.ester.ee/record=b1399956*est Elektroonikaspetsialistide koolitus tööstuse tarbeks - Elektroonikainstituudi visioonRang, ToomasRaadiotehnika 2001 : VIII rahvusvahelise telekommunikatsioonipäeva materjalid2001 / lk. 110-114 : ill Elektroonikud pidasid konverentsi : [BEC'98]Rang, ToomasTehnikaülikool1998 / 12. okt., lk. 1 11th Baltic Electronics conference BEC2008Rang, ToomasEstonian journal of engineering2010 / 1, p. 5-6 : ill Embedded blur-free single-image acquisition pipeline for droplet microfluidic imaging flow cytometry (IFC)Afrin, Fariha; Pärnamets, Kaiser; Le Moullec, Yannick; Udal, Andres; Koel, Ants; Pardy, Tamas; Rang, ToomasIEEE Access2024 / p. 92431-92441 https://doi.org/10.1109/ACCESS.2024.3421637 Estonian electronic industryRang, ToomasAutomation, simulation & measurement : ASM'91 : 3rd biennal conference, Tallinn, October 7-11, 1991. Section S / Tallinn Technical University1992 / p. 4-10: ill Estonian electronic industry - May 1995Rang, Toomas; Tani, Harry; Tamm, UljasBaltic electronics1995 / 1, p. 12-16: ill Et progressirongist mitte maha jääda : [V Balti Elektroonika Konverents]Rang, ToomasTehnikaülikool1996 / 11. okt., lk. 1-2 https://www.ester.ee/record=b5309277*est E-õppe müüdid ja tegelikkus : omad ja laenatud kogemusedRang, ToomasAvaja2004 / 21. jaan., lk. 8 : portr Exercises. Final test questions : supplementary material in the course "Microelectronics"Rang, Toomas2003 https://www.ester.ee/record=b1766979*est Experimental analysis of the dynamic performance of Si, GaAs and SiC diodesBlinov, Andrei; Vinnikov, Dmitri; Rang, ToomasBEC 2012 : 2012 13th Biennial Baltic Electronics Conference : proceedings of the 13th Biennial Baltic Electronics Conference : October 3-5, 2012, Tallinn, Estonia2012 / p. 49-52 : ill Experimental study of surface distortions in silicon carbide caused by diffusion weldingMizsei, Janos; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasBEC 2012 : 2012 13th Biennial Baltic Electronics Conference : proceedings of the 13th Biennial Baltic Electronics Conference : October 3-5, 2012, Tallinn, Estonia2012 / p. 53-56 : ill Feasibility study of Si and SiC MOSFETs in high-gain DC/DC converter for renewable energy applicationsBlinov, Andrei; Chub, Andrii; Vinnikov, Dmitri; Rang, ToomasProceedings : IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society : Austria Center Vienna, Vienna, Austria, 10-14 November, 20132013 / p. 5975-5978 : ill https://doi.org/10.1109/IECON.2013.6700115 Conference Proceedings at Scopus Article at Scopus Félvezető technológia számítógépes szimulációjaRang, Toomas; Tarnay, K.; Mizsei, JanosHíradástechnika = Journal on communications, computers, convergence, contents, companies1980 / p. 327-328 Finite element modelling for the optimization of microheating in disposable molecular diagnosticsPardy, Tamas; Rang, Toomas; Tulp, IndrekInternational journal of computational methods and experimental measurements2017 / p. 13-22 : ill https://doi.org/10.2495/CMEM-V5-N1-13-22 Journal metrics at Scopus Article at Scopus Finite element modelling for the optimization of microheating in disposable molecular diagnostics [Electronic resource]Pardy, Tamas; Rang, Toomas; Tulp, Indrek14th International Conference on Simulation and Experiments in Heat Transfer and its Applications : Heat Transfer 2016 : 7-9 September, 2016 Ancona, Italy : unedited papers2016 / p. [144-155] : ill. [USB] Finite element modelling of the resistive heating of disposable molecular diagnostics devicesPardy, Tamas; Rang, Toomas; Tulp, IndrekComputational methods and experimental measurements XVII2015 / p. 381-391 : ill http://dx.doi.org/10.2495/CMEM150341 First principles simulations of phenol and methanol detector based on pristine graphene nanosheet and armchair graphene nanoribbonsRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSensors2019 / art. 2731, 14 p. : ill https://doi.org/10.3390/s19122731 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS Foreford : twenty years of Baltic Electronics Conference in TallinnRang, ToomasProceedings of the Estonian Academy of Sciences. Engineering2006 / 3-2, p. 244-245 Formation of Diffusion welded Al contacts to semiconductor silicon carbideKorolkov, Oleg2004 Formation of large area Al contacts on 6H- and 4H-SiC substratesKorolkov, Oleg; Rang, ToomasSilicon Carbide and Related Materials : ECSCRM2000 : proceedings of the 3rd European Conference on Silicon Carbide and Related Materials : Kloster Banz, Germany, September 20002001 / p. 603-606 : ill Formation of large area Al contacts on 6H- and 4H-SiC substratesKorolkov, Oleg; Rang, ToomasAbstracts of the 3rd European Conference on Silicon Carbide and Related Materials : ECSCRM'2000 : Sept. 3-7, 2000, Kloster Banz, Germany2000 / p. 188 https://www.scientific.net/MSF.353-356.603 A fully differential, 200MHz, programmable gain, level-shifting, hybrid amplifier/power combiner/test buffer, using pre-distortion for enhanced linearityKampus, Vahur; Rang, Toomas; Knaller, DanielPRIME 2018 : 14th Conference on PhD Research in Microelectronics and Electronics2018 / p. 5-8 : ill https://doi.org/10.1109/PRIME.2018.8430372 GaAs based diffusion welded high voltage diode stacks [Electronic resource]Toompuu, Jana; Korolkov, Oleg; Sleptšuk, Natalja; Voitovitš, Viktor; Rang, ToomasIEEE International Conference on Semiconductor Electronics CD-ROM Proceedings2010 / [4] p https://ieeexplore.ieee.org/document/5549505 Generalized analytical model for SiC polytypic heterojunctionsRang, Toomas; Tabun, Indrek; Rang, Galina; Koel, AntsEstonian journal of engineering2011 / 2, p. 151-157 : ill Globaliseerumisest ja konkursivõimest ülikoolimaailmasRang, Toomas; Hendre, EnnMente et Manu2002 / 19., 26. veebr., lk. 2 https://www.ester.ee/record=b1242496*est High performance GaAs power diodesVoitovitš, Viktor; Rang, Toomas; Rang, Galina; Pikkov, MihhailBEC 2008 : 2008 International Biennial Baltic Electronics Conference : proceedings of the 11th Biennial Baltic Electronics Conference : Tallinn University of Technology : October 6-8, 2008, Tallinn, Estonia2008 / p. 111-114 : ill High quality LPE GaAs power diodes with DLTS methodRang, ToomasPublic service review : European Union2009 / p. 423 High quality metal ceramic interfaces using diffusion welding technologyKorolkov, Oleg; Rang, ToomasProceedings of the ASDAM'96, Oct. 20-24, 1996, Bratislava, Slovakia1996 / p. 309-312 High voltage diffusion‐welded stacks on the basis of SiC Schottky diodesKorolkov, Oleg; Sleptšuk, Natalja; Annus, Paul; Land, Raul; Rang, ToomasICSRM 2015 : program guide2015 / p. 73 High voltage GaAs diode stacks : the choice of epistructures for assemblingRang, Toomas; Voitovitš, Viktor; Kuznetsova, NataljaDesign, Test, Integration and Packaging of MEMS/MOEMS - DTIP2004 : 12-14 May 2004, Montreux, Switzerland2004 / p. 199-202 : ill High-voltage diffusion‐welded stacks on the basis of SiC Schottky diodesKorolkov, Oleg; Sleptšuk, Natalja; Annus, Paul; Land, Raul; Rang, ToomasSilicon carbide and related materials 2015 (ICSRM 2015) : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy2016 / p. 790-794 : ill https://doi.org/10.4028/www.scientific.net/MSF.858.790 Conference Proceedings at Scopus Article at Scopus Hot spots caused by contact inhomogeneities in 4H- and 6H-SiC Schottky structuresKurel, Raido; Rang, ToomasAdvanced Computational Methods in Heat Transfer VI2000 / p. 437-444 https://www.witpress.com/elibrary/wit-transactions-on-engineering-sciences/27/4468 I²L új irányrat a bipoláris technikában IRang, ToomasMérés és automatika: megjelenik a Méréstechnikai és Automatizálási Tudományos Egyesület Szerkesztésében1979 / p. 191-195 I²L, új irányrat a bipoláris technikában IIRang, ToomasMérés és automatika: megjelenik a Méréstechnikai és Automatizálási Tudományos Egyesület Szerkesztésében1979 / p. 279-283 Innovatsioon - võimalus või vajadusRang, ToomasArengusuundumused Eestis ja Võrumaal1997 / lk. 11-18 Instrument-free Lab-on-a-Chip DNA amplification test for pathogen detection [Online resource]Pardy, Tamas; Rang, Toomas; Kremer, Clemens; Tulp, IndrekBEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 20182018 / 4 p. : ill https://doi.org/10.1109/BEC.2018.8600991 Integraalskeemide projekteerimine : metoodiline juhend1988 https://www.ester.ee/record=b1239938*est Integrált áramköri elemek fizikai modellezése aramkölanalizös program segítségévelRang, Toomas; Tarnay, K.; Szekely, V.Híradástechnika = Journal on communications, computers, convergence, contents, companies1980 / p. 322-326 Integrated self-regulating resistive heating for isothermal nucleic acid amplification tests (NAAT) in Lab-on-a-Chip (LoC) devicesPardy, Tamas; Tulp, Indrek; Kremer, Clemens; Rang, Toomas; Stewart, RayPLoS ONE2017 / p. 1-11 : ill https://doi.org/10.1371/journal.pone.0189968 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS Interfaces to 6H-SiC substrates - technology and simulationRang, Toomas; Blum, AlfonsProceedings of the Estonian Academy of Sciences. Engineering1997 / 4, p. 250-259: ill Interpretation of some physical parameters of SiC Schottky interfaces manufactured by diffusion welding technologyRang, Toomas; Korolkov, Oleg; Ljutov, JevgeniProceedings of the Estonian Academy of Sciences. Engineering2004 / 3, p. 179-184 Investigation of additional states in the silicon carbide surface after diffusion weldingMizsei, Janos; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasICSCRM2011 : Cleveland Ohio, USA, September 11-16, 2011 : abstracts2011 / p. 356 : ill https://www.researchgate.net/publication/269377410_Investigation_of_Additional_States_in_the_Silicon_Carbide_Surface_after_Diffusion_Welding Investigation of barrier inhomogeneities and electronic transport on Al-Foil/p-Type-4H-SiCSchottky barrier Diodes using diffusion weldingZiko, Mehadi Hasan; Koel, Ants; Rang, Toomas; Rashid, Muhammad HaroonCrystals2020 / p. 636-647 https://doi.org/10.3390/cryst10080636 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS Investigation of deep level centers in i- and n-layers of GaAs pin-diodesToompuu, Jana; Korolkov, Oleg; Sleptšuk, Natalja; Rang, ToomasBEC 2014 : 2014 14th Biennial Baltic Electronics Conference : proceedings of the 14th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 6-8, 2014, Tallinn, Estonia2014 / p. 25-28 : ill Investigation of electrical characteristics of SiC based complementary JBS structuresKurel, Raido2005 https://www.ester.ee/record=b2053292*est Investigation of p-i-n GaAs structures by DLTS methodToompuu, Jana; Korolkov, Oleg; Sleptšuk, Natalja; Rang, ToomasElektronika ir elektrotechnika = Electronics and electrical engineering2010 / 4, p. 51-54 : ill https://www.researchgate.net/publication/267372152_Investigation_of_p-i-n_GaAs_structures_by_DLTS_method Investigation of subcontact layers in SiC after diffusion weldingKorolkov, Oleg; Kuznetsova, Natalja; Sitnikova, A.; Viljus, Mart; Rang, ToomasSilicon carbide and related materials 20072009 / p. 647-650 Investigation of subcontact layers in SiC after diffusion weldingKorolkov, Oleg; Kuznetsova, Natalja; Sitnikova, A.; Viljus, Mart; Rang, ToomasSilicon carbide and related materials2007 / p. 100 https://www.scientific.net/MSF.600-603.647 Investigation of the combined stress and strain situation in diffusion welded rectifying elementsKorolkov, Oleg; Rang, Toomas; Kurel, RaidoSurface treatment VI2003 / p. 307-316 https://www.witpress.com/elibrary/wit-transactions-on-engineering-sciences/39/1441 Investigation of the graphene-on-silicon-carbide and CVD graphene as a basis for bioimpedance sensor applications : posterSleptšuk, Natalja; Land, Raul; Toompuu, Jana; Lebedev, Alexander A.; Davydov, Valery; Eliseyev, Ilya; Kalinina, Evgenia; Korolkov, Oleg; Rang, ToomasePosters2018 / 1 p.: ill https://cdn.technologynetworks.com/ep/pdfs/natalja-sleptsuk-a-raul-land-a-jana-toompuu-a-alexander-lebedev-b-valery-davydov-b-ilya-eliseyev-b.pdf Investigation of the intermediate layer in the metal-silicon carbide contact obtained by diffusion welding = Difusioonkeevitusega valmistatud metalli ja ränikarbiidi vahelise üleminekuala vahekihi uurimineSleptšuk, Natalja2011 https://www.ester.ee/record=b2692547*est Ja nii nad tapsidki Ferdinandi... : [muutustest ülikoolides, ka TTÜs]Rang, ToomasMente et Manu2008 / 16. apr., lk. 2, 4 : portr. ; 30. apr., lk. 2 ; 16. mai, lk. 2 ; 30. mai, lk. 2 https://www.ester.ee/record=b1242496*est Joint optimization via deep reinforcement learning in wireless networked controlled systemsAshraf, Kanwal; Le Moullec, Yannick; Pardy, Tamas; Rang, ToomasIEEE Access2022 / p. 67152-67167 https://doi.org/10.1109/ACCESS.2022.3185244 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS Kalman Tarnay (1929 - 1998)Rang, ToomasThe 7th Biennial Conference on Electronics and Microsystem Technology "Baltic Electronics Conference" : BEC 2000 : October 8 - 11, 2000, Tallinn, Estonia : conference proceedings2000 / p. V : portr Kas ilma elektroonikata on elu Eestis võimalik?Rang, ToomasIV Välis-Eesti kongress, 29.-30. juunil 1999. a. Tallinnas : ettekannete kokkuvõtted1999 / lk. 106-108 Kolledžis elektroonika õppekaval roheline tee : [Maret Panga ja Toomas Rangi kommentaaridega]Aavik, Svea; Pank, Maret; Rang, ToomasMeie Maa2003 / 30. apr., lk. 1 Kuhu lähed, Tehnikaülikool? : [TTÜ koht Eestis, tegevuse eesmärgid, tegevusvaldkonnad, ressursid, õppekavad, õppejõud ja üliõpilased, koostöö jm.]Rang, ToomasTehnikaülikool1999 / 29. apr., lk. 5-8 Laia keelutsooniga pooljuhtmaterjalidel põhinevad pooljuhtseadisedRang, Toomas; Rang, GalinaTeadusmõte Eestis (X). Tehnikateadused. 3 : [artiklikogumik]2019 / lk. 169-176 : ill., fot https://www.ester.ee/record=b5208765*est Large area 4H-SiC power Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailAbstracts of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany2000 / p. 303-304 Large area 4H-SiC power Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailProceedings of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany2000 / p. 890-893 Large area 6H-SiC Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailProceedings of the Estonian Academy of Sciences. Engineering2000 / 2, p. 155-159 : ill https://artiklid.elnet.ee/record=b1004045*est Large area high quality interfaces to SiC substrates - technology and modellingRang, Toomas; Korolkov, Oleg; Kurel, Raido; Pikkov, MihhailMaterials mechanics, fracture mechanics, micro mechanics1999 / p. 574-579: ill Life-time characterization of LEDsPaisnik, Kristo; Rang, Galina; Rang, ToomasEstonian journal of engineering2011 / 3, p. 241-251 : ill Low noise LDO architecture with consideration for low voltage operationMihhailov, Juri; Strik, Viktor; Strik, Sergei; Rang, ToomasBEC 2014 : 2014 14th Biennial Baltic Electronics Conference : proceedings of the 14th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 6-8, 2014, Tallinn, Estonia2014 / p. 41-44 : ill Low power CMOS current source for shortened square wave signalsKasemaa, Argo; Rang, ToomasBEC 2010 : 2010 12th Biennial Baltic Electronics Conference : proceedings of the 12th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 4-6, 2010, Tallinn, Estonia2010 / p. 89-92 : ill Low-cost, portable dual-channel pressure pump for droplet microfluidicsJõemaa, Rauno; Grosberg, Martin; Rang, Toomas; Pardy, Tamas2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO), 23-27 May 2022, Opatija, Croatia : proceedings2022 / p. 205-211 : ill https://doi.org/10.23919/MIPRO55190.2022.9803371 Low-temperature annealing of lightly doped n-4H-SiC layers after irradiation with fast electronsKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSemiconductors2019 / p. 975−978 https://doi.org/10.1134/S1063782619070133 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS LPE technology for power GaAs diode structuresVoitovitš, Viktor; Rang, Toomas; Rang, GalinaEstonian journal of engineering2010 / 1, p. 11-22 : ill Lugupeetud TÜ rektor prof. J. Aaviksoo : pöördumineUibu, Jaak; Roosimaa, Toivo; Einasto, R.; Vooglaid, Ülo; Tõnstein, A.; Naelapea, A. E.; Rang, Toomas; Koslov, VladimirSirp2000 / 20. apr., lk. 20 Maaelektriku teatmik1975 https://www.ester.ee/record=b1304264*est Majanduskomisjon 2010–2016Rang, ToomasUuele kvaliteedile ja väärikale positsioonile : Tallinna Tehnikaülikool 2000-20152018 / lk. 248-263 http://www.ester.ee/record=b4775778*est https://digi.lib.ttu.ee/i/?10910 Materials and contact characterisation VIII2017 https://www.witpress.com/books/978-1-78466-197-7 Metallization technologies for wide band-gap semiconductor substrates : (invited paper)Rang, Toomas; Korolkov, Oleg; Pikkov, MihhailProceedings of the 6th Nexuspan Workshop Microsystems Technology Activities in Baltic Region : 23-24 April, 1999, Vilnius, Lithuania1999 / p. 27-30 Method of samples preparation intended for research of deep centers in i-, n-, and p-layers of GaAs p+-pin-n+ structures and result of analysisToompuu, Jana; Sleptšuk, Natalja; Korolkov, Oleg; Rang, ToomasBEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia2016 / p. 35-38 : ill http://www.ester.ee/record=b2150914*est Microheating solution for molecular diagnostics devices = Mikrosoojendamine molekulaardiagnostika seadistesPardy, Tamas2018 https://digi.lib.ttu.ee/i/?9249 https://www.ester.ee/record=b4759173*est Mille poolest erineb TTÜ... : [intervjuu Toomas Rangiga]Rang, ToomasAvaja2003 / 18. dets., lk. 2 : fot Model-based system architecture for event-triggered wireless control of bio-analytical devicesAshraf, Kanwal; Le Moullec, Yannick; Pardy, Tamas; Rang, Toomas2021 24th Euromicro Conference on Digital System Design (DSD), 01-03 September 20212021 / p. 465–471 : ill https://doi.org/10.1109/DSD53832.2021.00076 Modeling and simulations of 4H-SiC/6H-SiC/4H-SiC single quantum-well light emitting diode using diffusion bonding techniqueRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasMicromachines2021 / art. 1499 https://doi.org/10.3390/mi12121499 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS Modeling in semiconductor electronicsJavor, A.; Rang, Toomas; Szekely, V.; Tarnay, K.; Velmre, Enn1993 https://www.ester.ee/record=b1031052*est Modeling in semiconductor electronicsVelmre, Enn; Rang, ToomasBEC : Baltic Electronics Conference : proceedings of the 4th Biennial Conference, October 9-14, 1994, Tallinn (Estonia). 21994 / p. 501-516: ill https://www.ester.ee/record=b2150914*est Modelling and experimental characterisation of self-regulating resistive heating elements for disposable medical diagnostics devicesPardy, Tamas; Rang, Toomas; Tulp, IndrekMaterials characterization VII2015 / p. 263-271 : ill Modelling and experimental characterisation of thermoelectric heating for molecular diagnostics devicesPardy, Tamas; Rang, Toomas; Tulp, IndrekBEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia2016 / p. 27-30 : ill http://www.ester.ee/record=b2150914*est Modelling of inhomogeneities of SiC Schottky interfacesRang, ToomasSoftware for Electrical Engineering Analysis and Design V : [Fifth International Conference ... : Electrosoft V]2001 / p. 3-15 : ill https://www.witpress.com/Secure/elibrary/papers/ES01/ES01000FU.pdf Modelling of metal alloy contacts to semiconductor substrateRang, ToomasSimulation and design of microsystems and microstructures1995 / p. 251-258: ill https://www.witpress.com/Secure/elibrary/papers/MIC95/MIC95030FU.pdf Modelling of the tunneling current in metal alloy contacts to 6H- and 4H-SiC substratesRang, ToomasMICROSIM II : simulation and design of microsystems and microstructures1997 / p. 23-31 : ill Nano- and Micro-Scale simulations of Ge/3C-SiC and Ge/4H-SiC NN-heterojunction diodesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 2019 Materials science forum2020 / p. 490-496 https://doi.org/10.4028/www.scientific.net/MSF.1004.490 Conference proceedings at Scopus Article at Scopus Nano and micro-scale simulations of Si/4H-SiC and Si/3C-SiC NN-heterojunction diodesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon Carbide and Related Materials 2018 : 12thEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK2019 / p. 357–361 https://doi.org/10.4028/www.scientific.net/MSF.963.357 Conference proceeding at Scopus Article at Scopus Nanoscale and microscale simulations of N-N junction heterostructures of 3C-4H silicon carbideRashid, Muhammad Haroon; Koel, Ants; Rang, Toomas; Gähwiler, Reto; Grosberg, Martin; Jõemaa, RaunoMaterials and contact characterisation VIII2017 / p. 235-248 : ill https://doi.org/10.2495/MC170241 Conference proceedings at Scopus Article at Scopus New interdisciplinary master program in communicative electronics at Tallinn University of TechnologyRang, Toomas; Sleptšuk, Natalja5th International Conference on Interdisciplinarity in Education ICIE'10 : New Higher Education Programs, June 17-19, 2010, Tallinn, Estonia : proceedings2010 / p. 187-190 : ill Non-destructive eddy current measurments for silicon carbide heterostructure analysisSahakyan, Armen; Koel, Ants; Rang, ToomasMaterials and contact characterisation VIII2017 / p. 49-60 : ill https://doi.org/10.2495/MC170061 Conference proceedings at Scopus Article at Scopus Numerical analysis of the influence of deep energy level traps in SiC Schottky structuresKoel, Ants; Rang, Toomas; Rang, GalinaHigh performance structure and materials. VI2012 / p. 439-448 : ill Numerical simulation of P-type Al/4H-SiC Schottky barrier diodes [Online resource]Ziko, Mehadi Hasan; Koel, Ants; Rang, ToomasBEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 20182018 / 4 p.: ill https://doi.org/10.1109/BEC.2018.8600976 Numerical simulations for reverse recovery process investigations of LPE GaAs power diodesKoel, Ants; Rang, Toomas; Voitovitš, Viktor; Toompuu, JanaBEC 2012 : 2012 13th Biennial Baltic Electronics Conference : proceedings of the 13th Biennial Baltic Electronics Conference : October 3-5, 2012, Tallinn, Estonia2012 / p. 39-42 : ill Numerical study of current crowding phenomenon in complementary 4H-SiC JBS rectifiersRang, Toomas; Higelin, G.; Kurel, RaidoSilicon Carbide and Related Materials 20032004 / p. 1045-1048 https://www.scientific.net/MSF.457-460.1045 Numerical study of turn-off phenomenon in complementary 4H-SiC JBS rectifiersRang, Toomas; Kurel, Raido; Higelin, G.BEC 2004 : proceedings of the 9th Biennial Baltic Electronics Conference : October 3-6, 2004, Tallinn, Estonia2004 / p. 47-50 : ill Numerical two-carrier simulation of the M-S (Schottky) structuresRang, ToomasResearch report : System Theory Laboratory of Electrical Engineering, University of the Saarland1985 / s. 62 Näidisülesanded. Test : abimaterjal ainele "Mikroelektroonika"2003 http://www.ester.ee/record=b1766976*est Odavaid LEDe tasub vältida : [TTÜ Thomas Johann Seebecki elektroonikainstituudis võeti luubi alla valgusdioodide ehk LEDide karakteristikud, tulemusi tutvustab instituudi direktor professor Toomas Rang]Rang, Toomas; Aru, ErikMente et Manu2012 / lk. 8 : fot https://www.ester.ee/record=b1242496*est One-dimensional numerical simulation of complementary power Schottky structuresRang, ToomasIEE proceedings. Part I Solid-state and electron devices1985 / p. 253-256 Open source hardware cost-effective imaging sensors for high-throughput droplet microfluidic systemsPärnamets, Kaiser; Koel, Ants; Pardy, Tamas; Rang, ToomasProceedings of 26th International Conference : ELECTRONICS 20222022 / 6 p https://doi.org/10.1109/IEEECONF55059.2022.9810383 Optical detection methods for high-throughput fluorescent droplet microflow cytometryPärnamets, Kaiser; Pardy, Tamas; Koel, Ants; Rang, Toomas; Scheler, Ott; Le Moullec, Yannick; Afrin, FarihaMicromachines2021 / art. 345, 20 p. : ill https://doi.org/10.3390/mi12030345 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS Optical dynamics of copper-doped cadmium sulfide (CdS) and zinc sulfide (ZnS) quantum-dots core/shell nanocrystalsRashid, Muhammad Haroon; Koel, Ants; Rang, Toomas; Nasir, Nadeem; Sabir, Nadeem; Ameen, Faheem; Rasheed, AbherNanomaterials2022 / art. 2277 https://doi.org/10.3390/nano12132277 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS Panus eilsele teeb homme töötuksRang, ToomasLuup1999 / 9, lk. 24-26 https://artiklid.elnet.ee/record=b2091983*est A parametric framework for modelling of bioelectrical signals = Parameetriline raamistik bioelektriliste signaalide modelleerimiseksMuhammad, Yar2015 http://www.ester.ee/record=b4473232*est A parametric framework for the development of bioelectrical applications : application to a bio-impedance signal simulatorMuhammad, Yar; Annus, Paul; Le Moullec, Yannick; Rang, ToomasProceedings of the Estonian Academy of Sciences2016 / p. 345-357 : ill https://doi.org/10.3176/proc.2016.4.03 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS Parametric simulation of SiC Schottky JBC structuresRang, Toomas; Kurel, RaidoComputer methods and experimental measurements for surface effects and contact mechanics VIII2007 / p. 315-334 https://www.witpress.com/Secure/elibrary/papers/SECM07/SECM07030FU1.pdf Phenol and methanol detector based on pristine graphene nano-sheet: a first principles study [Online resource]Rashid, Muhammad Haroon; Koel, Ants; Rang, ToomasBEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 20182018 / 4 p.: ill https://doi.org/10.1109/BEC.2018.8600982 Physics related modeling of power LEDsPaisnik, Kristo; Poppe, Andras; Rang, Toomas; Rang, GalinaBEC 2012 : 2012 13th Biennial Baltic Electronics Conference : proceedings of the 13th Biennial Baltic Electronics Conference : October 3-5, 2012, Tallinn, Estonia2012 / p. 57-60 : ill PID controller tuning optimization using genetic algorithm for droplet size control in microfluidicsGyimah, Nafisat; Jõemaa, Rauno; Pärnamets, Kaiser; Scheler, Ott; Rang, Toomas; Pardy, Tamas2022 18th Biennial Baltic Electronics Conference (BEC)2022 / 6 p https://doi.org/10.1109/BEC56180.2022.9935596 Plaan 3000PlussRang, ToomasMente et Manu2010 / lk. 3 : fot https://artiklid.elnet.ee/record=b2286893*est Poleemiline järelsõnaRang, ToomasMente et Manu2004 / 30. märts, lk. 2 https://www.ester.ee/record=b1242496*est Polymer nanofiber deposition in lab-on-a-chip devices by electrospinningPardy, Tamas; Jõemaa, Rauno; Ender, Ferenc; Rang, Toomas; Hegedus, Kristof; Balogh-Weiser, Diana2020 17th Biennial Baltic electronics conference, Tallinn, Estonia, October 6-8, 2020 : proceedings2020 / 4 p. : ill https://doi.org/10.1109/BEC49624.2020.9277494 Polytypic heterojunctions for wide bandgap semiconductor materialsShenkin, Mikhail; Korolkov, Oleg; Rang, Toomas; Rang, GalinaMaterials characterization VII2015 / p. 273-282 : ill Pooljuhtstruktuuride tööpõhimõtted. Struktuuride realisatsioonid kristallis : abimaterjal ainele "Mikroelektroonika"2003 http://www.ester.ee/record=b1782563*est Power Stage MOSFETs Segmentation in Ripple Controlled Step-Down SMPS [Online resource]Mihhailov, Juri; Koort, Marko; Rang, ToomasBEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 20182018 / 4 p. : ill https://doi.org/10.1109/BEC.2018.8600960 Precision engineering and mechatronics trends in EstoniaAjaots, Maido; Rang, Toomas; Tamre, MartNordDesign'96 : 28.-30.8.1996, Helsinki University of Technology, Espoo, Finland : proceedings1996 / p. 289-296: ill Preliminary investigation of diffusion welded contacts to p-type 6H-SiCKorolkov, Oleg; Rang, Toomas; Kuznetsova, Natalja; Ruut, JanaBEC 2002 : proceedings of the 8th Biennial Baltic Electronics Conference : October 6-9, 2002, Tallinn, Estonia2002 / p. 55-56 : ill Principles of semiconductor structures. Realisation of structures in crystals : supplementary lecture material in the subject "Microelectronics"Rang, Toomas2003 http://www.ester.ee/record=b1782565*est Process development for 3D laser lithographyKaste, N.; Filbert, A.; Mescheder, U.; Rang, Toomas; Rang, GalinaHigh performance and optimum design of structures and materials2014 / p. 139-150 : ill https://doi.org/10.2495/HPSM140131 Conference proceedings at Scopus Article at Scopus Processing unit for alcohol sensorKasemaa, Argo; Rang, ToomasProceedings of the Conference Electronics'98, 19-20 May 1998, Kaunas, Lithuania1998 / p. 22-23 Product and manufacturing in electronics : supplementary material in the subject "Technologies of electronic circuits"Rang, Toomas2003 https://www.ester.ee/record=b1766953*est Pungi-, roki- või diskotaat : [Riho Baumannist tema enda, Olavi Pihlamäe ja Toomas Rangi kommentaaridega]Rebane, Selene-Rete; Pihlamägi, Olavi; Rang, ToomasÜliõpilasleht2003 / lk. 2 : ill Pöördumine Haridus- ja Teadusministri ning Riigikogu kultuurikomisjoni esimehe poole : [doktorikoolide probleemist]Arro, Ilmar; Kaljurand, Mihkel; Kallavus, Urve; Kübarsepp, Jakob; Lille, Ülo; Lopp, Margus; Mellikov, Enn; Min, Mart; Rang, Toomas; Rüstern, Ennu; Taklaja, Andres; Tamm, Toomas; Tammet, Tanel; Tepandi, Jaak; Ubar, Raimund-Johannes; Öpik, AndresMente et Manu2005 / 18. mai. lk. 1 https://www.ester.ee/record=b1242496*est Pöördumine Haridus- ja Teadusministri ning Riigikogu kultuurikomisjoni esimehe poole : [doktorikoolide probleemist]Arro, Ilmar; Kaljurand, Mihkel; Kallavus, Urve; Kübarsepp, Jakob; Lille, Ülo; Lopp, Margus; Mellikov, Enn; Min, Mart; Rang, Toomas; Rüstern, Ennu; Taklaja, Andres; Tamm, Toomas; Tammet, Tanel; Tepandi, Jaak; Ubar, Raimund-Johannes; Öpik, AndresTallinna Tehnikaülikooli aastaraamat 20052006 / lk. 430-431 Rahvusvaheline Seebecki foorum Tallinnas : [20.-24. mail 2013]Rang, ToomasTallinna Tehnikaülikooli aastaraamat 20132014 / lk. 303-304 Relative complex permittivity and its dependence on frequencyGiannoukos, Georgios; Min, Mart; Rang, ToomasWorld journal of engineering2017 / p. 532-537 : ill https://doi.org/10.1108/WJE-01-2017-0007 Journal metrics at Scopus Article at Scopus Ränikarbiidil põhinevate jõupooljuhtseadiste disain ja karakteriseerimineRang, Toomas; Rang, GalinaTeadusmõte Eestis. 4, Tehnikateadused. 22007 / lk. 121-131 : ill Self-heating phenomenon and current suppressing effect at 6H-SiC Schottky interfacesKurel, Raido; Rang, ToomasProceedings of the 5th NEXUSPAN Workshop on Thermal Aspects in Microsystem Technology, 6-8 May 1998, Budapest, Hungary1998 / p. 88-91 https://www.witpress.com/elibrary/wit-transactions-on-engineering-sciences/22/5010 Self-heating phenomenon and current suppressing effect at the SiC Schottky interfacesRang, Toomas; Kurel, RaidoSoftware for electrical engineering analysis and design. IV1999 / p. 153-162: ill https://www.witpress.com/elibrary/wit-transactions-on-engineering-sciences/22/5010 Semiconductor based alcohol sensing elementRang, Toomas; Kasemaa, ArgoProceedings of the 6th Nexuspan Workshop Microsystems Technology Activities in Baltic Region : 23-24 April, 1999, Vilnius, Lithuania1999 / p. 82-84 SiC JBS diode symmetrical voltage doubler represented as the diffusion-welded stackKorolkov, Oleg; Land, Raul; Toompuu, Jana; Sleptšuk, Natalja; Rang, ToomasSilicon carbide and related materials 2017 : ICSCRM 2017 : selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and related materials, September 17-22, 2017, Washington, DC, USA2018 / p. 862–865 : ill https://doi.org/10.4028/www.scientific.net/MSF.924.862 Conference Proceedings at Scopus Article at Scopus SiC Schottky diode for power convertersPikkov, Mihhail; Rang, ToomasPEDC 2001 : Power Electronics Devices Compatibility : 2nd conference : 3-5 September 2001, Zielona Gora, Poland2001 / p. 156-161 : ill SiC Schottky diode for use in power convertorsPikkov, Mihhail; Rang, Toomas; Pokatilov, AndreiBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 245-246 : ill SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, Toomas11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]2016 / p. 42 SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSilicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece2017 / p. 697-700 : ill https://doi.org/10.4028/www.scientific.net/MSF.897.697 Conference proceedings at Scopus Article at Scopus SiC и GaAs диоды в устройствах силовой электроникиBlinov, Andrei; Vinnikov, Dmitri; Rang, ToomasТехнiчна електродинамiка : тематичний випуск : силова електрониiка та енергоефективнiсть2012 / с. 42-46 : ил Silicon carbide - new challenge for power semiconductor devicesRang, Toomas; Rang, Galina2nd International Symposium "Topical Problems of Education in the Field of Electrical and Power Engineering" : Kuressaare, Estonia, January 17-22, 20052005 / p. 36-42 : ill Silicon integrated circuit fabrication process modeling and simulationRang, Toomas; Tarnay, K.; Mizsei, JanosPeriodica polytechnica. Electrical engineering = Электротехника1980 / p. 109-113 https://www.ester.ee/record=b1198855*est Silicon planar technology process modelingRang, Toomas; Tarnay, K.; Masszi, F.Test methods in electronics technology : third International Spring Seminar on Electronics Technology, May 15-18, 1979, Balatonfüred, Hungary1979 / p. 110-120 Simple relationship between the breakdown voltage, concentration and junction depth pn diffused junctionsRang, ToomasPhysica status solidi. A, Applied research1982 / p. K117-K119 : tab., joon https://www.ester.ee/record=b1562026*est Simulation of deep energy traps to explain the VAC temperature dependence anomaly of diffusion welded Schottky contactsKoel, Ants; Rang, Toomas; Rang, GalinaICSCRM2011 : Cleveland Ohio, USA, September 11-16, 2011 : abstracts2011 / p. 340 : ill Simulations of benzene and hydrogen-sulfide gas detector based on single-walled carbon nanotube over intrinsic 4H-SiC substrateRashid, Muhammad Haroon; Koel, Ants; Rang, Toomas; Ziko, Mehadi HasanMicromachines2020 / art. 453, 13 p. : ill https://doi.org/10.3390/mi11050453 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS Simulations of graphene nanoribbon field effect transistor for the detection of propane and butane gases : a first principles studyRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasNanomaterials2020 / art. 98 https://doi.org/10.3390/nano10010098 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS Simulations of heterostructures based on 3C-4H and 6H-4H silicon carbide polytypesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon carbide and related materials 2017 : ICSCRM 2017 : selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and related materials, September 17-22, 2017, Washington, DC, USA2018 / p. 302-305 : ill https://doi.org/10.4028/www.scientific.net/MSF.924.302 Conference Proceedings at Scopus Article at Scopus Simulations of propane and butane gas sensor based on pristine armchair graphene nanoribbonRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasIOP conference series : materials science and engineering2018 / art. 012001, 8 p https://doi.org/10.1088/1757-899X/362/1/012001 Conference proceedings at Scopus Article at Scopus Article at WOS A smart capless voltage regulator for very high bandwidth A/D and D/A converters in a standard 28nm CMOS processKampus, Vahur; Rang, ToomasBEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia2016 / p. 43-46 : ill http://www.ester.ee/record=b2150914*est Some comparative properties of diffusion-welded contacts to 6H and 4H silicon carbideKorolkov, Oleg; Rang, ToomasSilicon Carbide and Related Materials 2001 : ICSCRM2001 : proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28 - November 2, 2001. Part 22002 / p. 941-944 : ill Some of comparative properties of diffusion welded contacts to 6H- and 4H-silicon carbideKorolkov, Oleg; Rang, ToomasInternational Conference on Silicon Carbide and Related Materials 2001 - ICSCRM2001 - October 28-November 2, 2001 (Epochal Tsukuba, Ibaraki, Japan) : technical digest2001 / p. 625-626 : ill https://www.researchgate.net/publication/250340293_Some_Comparative_Properties_of_Diffusion-Welded_Contacts_to_6H_and_4H_Silicon_Carbide Szilicium planar technologiai eljaras szamitögepes stimulaciojaRang, Toomas; Tarnay, K.; Masszi, F.Finommechanika, mikrotechnika: az Optikai, Akusztikai és Filmtechnikai Egyesület, a Híradástechnikai Tudományos Egyesület és a Méréstechnikai és Automatizálási Tudományos Egyesület lapja1979 / p. 257-260 Static and dynamic behavior of the SiC complementary JBS structuresKurel, Raido; Rang, ToomasBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 59-62 : ill Status quo in Estonian electronics industry?Rang, Toomas; Tamm, UljasBEC : Baltic Electronics Conference : proceedings of the 4th Biennial Conference, October 9-14, 1994, Tallinn (Estonia). 21994 / p. 585-591: ill https://www.ester.ee/record=b2150914*est Steady state analysis of the commutating LC filter based dual active bridge for the isolation stage of power electronic transformer [Electronic resource]Beldjajev, Viktor; Rang, Toomas; Zakis, JanisCPE 2013 : 2013 International Conference on Compatibility and Power Electronics (CPE) : June 5-7, 2013, Ljubljana, Slovenia : conference proceedings2013 / p. 138-143 : ill [CD-ROM] Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probeMizsei, Janos; Korolkov, Oleg; Toompuu, Jana; Rang, ToomasThe 9th European Conference on Silicon Carbide and Related Materials : abstract book : St. Petersburg Russia, 2-6 September, 20122012 / 2 p. : ill Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probeMizsei, Janos; Korolkov, Oleg; Toompuu, Jana; Mikli, Valdek; Rang, ToomasSilicon Carbide and Related Materials 2012 : selected peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation2013 / p. 677-680 : ill https://doi.org/10.4028/www.scientific.net/MSF.740-742.677 Conference Proceedings at Scopus Article at Scopus Conference Proceedings at WOS Article at WOS Subcontact layers in LPE structures for forming the ohmic contacts on GaAs semiconductor substratesKorolkov, Oleg; Voitovitš, Viktor; Rang, ToomasAbstract book of 13th American Conference on Crystal Growth and Epitaxy : August 12-16, 2001, Burlington, Vermont, USA2001 / p. 133 Sulle, abiturient! : Üliõpilaste vastuvõtt 1991. aRang, ToomasTehnikaülikool1991 / 25. apr., lk. 1-2 Tallinna Tehnikaülikool ja Elcoteq Tallinn AS elektroonikainseneride ettevalmistuse ühisrindelRang, ToomasElektroonika 2000 : VII rahvusvahelise telekommunikatsioonipäeva konverentsi ettekannete materjalid2000 / lk. 19-20 https://www.ester.ee/record=b1399956*est Tartu diooditegija trügib ainulaadse tehnoloogiaga maailmaturule : [firma Clifton nõukogu liikme Toomas Rangi kommentaariga]Paris, Krister; Aru, Erik; Rang, ToomasPõhjarannik2005 / 23. märts, Ärileht, lk. 3 Tehnikateadused. ElektrotehnikaRang, ToomasEesti entsüklopeedia. 11, Eesti üld2002 / lk. 500 Tehnikaülikool võitis EL hanke eurode tuvastamiseks : [intervjuu TTÜ elektroonikainstituudi direktori Toomas Rangiga ja professor Mart Min'iga]Rang, Toomas; Ummelas, Mart; Min, MartMente et Manu2008 / 30. jaan., lk. 3 https://artiklid.elnet.ee/record=b1118469*est Tehnikaülikooli rektori järjekordsed valimised, ehk, Kuidas paistavad järgmise rektori ülesanded "altpoolt" vaadatunaRang, ToomasTehnikaülikool1999 / 22. nov., lk. 4-7: portr Temperature effects in alloy metal and 6H-SiC substrate Schottky contacts caused by the current suppressing effectRang, Toomas; Blum, AlfonsProceedings of the International Conference and Exhibition Micro Materials : MicroMat '97, April 16-18, 1997, Berlin, Germany1997 / p. 591-596 Temperature influence on current suppressing effect in SiC Schottky diodeKurel, Raido; Rang, ToomasProceedings of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany2000 / p. 1208-1209 Temperature influence on current suppressing effect in SiC Schottky diodeKurel, Raido; Rang, ToomasAbstracts of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany2000 / p. 217-218 The 7th Biennial Conference on Electronics and Microsystem Technology "Baltic Electronics Conference" : BEC 2000 : October 8 - 11, 2000, Tallinn, Estonia : conference proceedingsRang, Toomas2000 https://www.ester.ee/record=b2150914*est The basic parameters of diffusion welded Al Schottky contacts to p- and n-SiCKorolkov, Oleg; Ruut, Jana; Kuznetsova, Natalja; Rang, ToomasSilicon Carbide and Related Materials 20032004 / p. 857-860 https://doi.org/10.4028/www.scientific.net/MSF.457-460.857 The basic Schottky parameters for combined diffusion welded and sputter metal contactsKuznetsova, Natalja; Korolkov, Oleg; Rang, Toomas; Pikkov, MihhailBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 47-50 : ill The d.c. modeling of I²L with the non-linear circuit analysis program TRANZ-TRANRang, ToomasPeriodica polytechnica. Electrical engineering = Электротехника1981 / p. 103-114 : joon https://www.ester.ee/record=b1198855*est https://pp.bme.hu/ee/article/view/4771/3876 The dependence of reverse recovery time on barrier capacitance and series on-resistance in Schottky diodesVeher, Oleksandr; Sleptšuk, Natalja; Toompuu, Jana; Korolkov, Oleg; Rang, ToomasMaterials and contact characterisation VIII2017 / p. 15-22 : ill https://doi.org/10.2495/MC170021 Conference proceedings at Scopus Article at Scopus The electrotechnical and electronics industryRang, ToomasTechnology policy for improving competitiveness of Estonian industries1996 / p. 60-65 The measurement and tuning of SiC diode voltage doubler represented as diffusion-welded stack [Online resource]Toompuu, Jana; Sleptšuk, Natalja; Land, Raul; Korolkov, Oleg; Rang, ToomasBEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 20182018 / 4 p.: ill https://doi.org/10.1109/BEC.2018.8600963 The permeable base transistorKoel, Ants; Nilsson, H.H.; Masszi, F.; Rang, ToomasBEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedings1998 / p. 287-290: ill The Schottky parameter test for combined diffusion welded and sputter large area contactsKorolkov, Oleg; Kuznetsova, Natalja; Rang, Toomas; Syrkin, A.; Dmitriev, V.Silicon carbide and related materials2007 / p. 737-740 https://www.scientific.net/MSF.556-557.737 The specificity of solid-phase interaction of aluminium with silicon carbide in the manufacture of diffusion-welded contacts to semiconductor devicesSleptšuk, Natalja; Korolkov, Oleg; Toompuu, Jana; Rang, Toomas; Mikli, ValdekElektronika ir elektrotechnika = Electronics and electrical engineering2012 / p. 45-48 : ill https://eejournal.ktu.lt/index.php/elt/article/view/2610 Thermal analysis of a disposable, instrument-free DNA amplification lab-on-a-chip platformPardy, Tamas; Rang, Toomas; Tulp, IndrekSensors2018 / art. 1812, 13 p. : ill https://doi.org/10.3390/s18061812 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Artice at WOS Toode ja tootmine elektroonikas : abimaterjal ainele "Elektroonikaskeemide tehnoloogiad"2003 http://www.ester.ee/record=b1766950*est TRANZ-TRAN : mittelineaarsete skeemide analüüsi programm : kasutusjuhend1983 https://www.ester.ee/record=b1255945*est TRANZ-TRAN mittelineaarsete skeemide analüüsi programm : kasutusjuhend1986 https://www.ester.ee/record=b1205915*est TRANZ-TRAN mittelineaarsete skeemide analüüsi programm : mudelite kirjeldus ja parameetrite määramine1986 https://www.ester.ee/record=b1205916*est Tunne kolleegi. Enn Velmre : [intervjuu Enn Velmrega]Velmre, Enn; Rang, Toomas; Haldre, Eero; Oras, Anne; Min, MartAvaja2003 / lk. 3 : fot Two dimensional modeling of the shunted emitter area for power shepistorsRang, Toomas; Saul, IndrekModeling, Simulation and Control1989 / p. 29-39 Two dimensional modelling of alloy metal Schottky contacts to 6H-SiC substrateRang, Toomas; Blum, AlfonsProceedings of the ELECTROSOFT 96, May 28-30, San-Miniato, Italy1996 / p. 347-356 Vaimust, võimust, traditsioonidest ja internetipõhisest õppest: oma mõtteid ja laenatud tarkustRang, ToomasMente et Manu2004 / 27. jaan., 10. veebr., 20. veebr., 9. märts, lk. 2 https://artiklid.elnet.ee/record=b1341909*est Vanamoodi enam ei saa, uutmoodi veel ei oskaRang, ToomasProfit2005 / 4, lk. 22 : portr Võta või jäta!Rang, ToomasMente et Manu2010 / lk. 2 : fot. ; 12. veebr., lk. 3 : fot https://www.ester.ee/record=b1242496*est Väikesed interpretatsioonid pärastlõunaksRang, ToomasA & A2004 / 3, lk. 4-6 https://artiklid.elnet.ee/record=b1015743*est Ökonoomsete negatiivse diferentsiaaltakistusega astmete ja elementide disainimine ja optimeerimineTaniloo, Rainer2005 https://www.ester.ee/record=b2073482*est Überblick der Situation in der Deutschen Elektronik- und InformatikindustrieRang, ToomasAutomation, simulation & measurement : ASM'91 : 3rd biennal conference, Tallinn, October 7-11, 1991. Section S / Tallinn Technical University1992 / S. 11-25: Ill Ülikool ootab ettevõtlikust, efektiivsust ja edukustRang, ToomasMente et Manu2015 / lk. 8-9 : fot https://artiklid.elnet.ee/record=b2725557*est Ülikool vajab jõulist juhtimist : intervjuu TTÜ elektroonikainstituudi direktori professor Toomas RangigaRang, ToomasMente et Manu2010 / lk. 1, 3 : fot Аналитико-численная модель для исследования стационарного непроводящего состояния силовых тиристоровVelmre, Enn; Rang, ToomasРасчет и проектирование измерительных преобразователей1983 / с. 57-67 Зависимость подвижности электронов и дырок от температуры и концентрации примеси в кремнииRang, Toomas; Velmre, EnnАнализ и моделирование технических устройств и систем АСУТП1977 / с. 115-120 : илл https://www.ester.ee/record=b2190987*est https://digikogu.taltech.ee/et/Item/b7c66054-0b4f-4684-9453-442bc7e6e200 Инженерное обеспечение САПР элементов РЭАRang, ToomasЧисленные методы и средства проектирования и испытания элементов РЭА : тезисы докладов. Том 11987 / с. 13-23 : ил https://www.ester.ee/record=b1273986*est К расчету максимального напряжения переключения p-n-p-n-структурыVelmre, Enn; Rang, ToomasАнализ и моделирование технических устройств и систем АСУТП1977 / с. 121-126 : илл https://www.ester.ee/record=b2190987*est https://digikogu.taltech.ee/et/Item/b7c66054-0b4f-4684-9453-442bc7e6e200 Компараторы с обратной связьюGallai, S.; Rang, ToomasМашинное проектирование электронных устройств и систем1988 / с. 92-104 Комплексный подход к системам проектирования элементов полупроводниковой и интегральной электроникиRang, ToomasМашинное проектирование электронных устройств и систем1988 / с. 149-165 Коэффициенное ударное ионизацеи носителей заряда в арсениде галлияRang, Toomas; Puusepp, MärtЭлектронная техника. Серия 2, Полупроводниковые приборы : научно-технический сборник1987 / с. 98-100 https://www.ester.ee/record=b2160501*est Критические параметры эквивалентных моделей полупроводниковых приборовRang, ToomasМоделирование и управление в системах технической кибернетики1987 / с. 72-76 Лавинное размножение носителей в кремниевых арсенид-галлиевых и фосфидиндиевых дополнительных PN-переходахRang, Toomas; Velmre, EnnРасчет и проектирование систем технической кибернетики1984 / с. 3-13 Машинное моделирование цепи питания, обеспечивающей инжекторный ток для И²Л схемRang, ToomasРасчет и проектирование приборов, устройств и систем технической кибернетики1981 / с. 15-19 : илл https://www.ester.ee/record=b1319172*est https://digikogu.taltech.ee/et/Item/4c9b1559-97b9-4d9b-bac8-6c40840ba442 Моделирование концентрации носителей заряда в полупроводникахRang, ToomasИсследования по прикладной квантовой электронике1987 / с. 26-36 Моделирование логических элементов для программы нелинейного анализа съем ТРАНЗ-ТРАНHaabu,T.; Rang, ToomasXXVIII студенческая научно-техническая конференция вузов Белоруссии, Молдавии, Эстонии, Латвии, Литвы, 3-5 апр. 1984. Ч. 1, Общественные науки, физико-математические науки, химия, приборостроение, радиотехника и электроника, робототехника и гибкие автоматизированные производства : тезисы докладов1984 / с.28 https://www.ester.ee/record=b3913283*est Моделирование подвижностей носителей. 1, Рассеивание на акустических фононах и на нейтральной и ионизированной примесиRang, ToomasАнализ и синтез сложных систем и цепей с помощью ЭВМ1986 / с. 103-116 Моделирование подвижностей носителей. 2, Рассеивание на носителях и поверхности, эффект насыщения дрейфовой скорости носителейRang, ToomasАнализ и синтез сложных систем и цепей с помощью ЭВМ1986 / с. 117-130 Моделирование технологического процесса кремниевых силовых полупроводниковых приборов на ЭВМRang, Toomas; Velmre, EnnСинтез и диагностика цифровых устройств и систем1982 / с. 107-112 Моделирование транспортных уравнений в полупроводникахRang, ToomasИсследования по прикладной квантовой электронике1987 / с. 37-42 Модель ключа на базе ВТСПRang, Toomas; Koel, AntsTallinna Tehnikaülikooli Toimetised1990 / lk. 109-116: ill Модель межсоединений/линии передачи на базе ВТСПOrro, S.; Rang, ToomasTallinna Tehnikaülikooli Toimetised1990 / lk. 103-108 Нелинейная зарядовая модель тиристораRang, ToomasИзмерение и моделирование в электронике1987 / с. 94-100 Нелинейная модель тиристора для программы анализа цепейRang, ToomasПроблемы моделирования и измерения в электронике1986 / с. 13-19 Низкотемпературный отжиг слаболегированных слоев n-4H-SiC после облучения быстрыми электронамиKorolkov, Oleg; Kozlovski, Vitali; Lebedev, Alexander; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasФизика и техника полупроводников2019 / с. 991-994 https://doi.org/10.21883/FTP.2019.07.47879.9089 Программа определения параметров "OPTI"Rang, ToomasПроблемы моделирования и измерения в электронике1986 / с. 21-26 РадиотехникаUmborg, Jaak; Hinrikus, Hiie; Meigas, Kalju; Zahharov, Boriss; Taklaja, Andres; Rang, Toomas; Manak, I.S.; Lissenkova, A.M.; Bondarenko, A.N.; Falkova, N.V.; Krusell, Urmas1987 https://www.ester.ee/record=b1273963*est Расчет туннельного тока в переходах металл - полупроводникRang, ToomasРасчет и проектирование измерительных преобразователей1983 / с. 69-74 Специализированные базы данных для программных средств моделирования и анализа элементов твердотельной электроникиOrro, S.; Rang, ToomasМашинное проектирование электронных устройств и систем1989 / с. 20-24 Сравнение разных методов оптимизацииRang, ToomasМоделирование и управление в системах технической кибернетики1987 / с. 77-84 Численное моделирование pn-структур с двойной фаски с помощью программы "FAAS"Rang, Toomas; Nurste, IvarИзмерение и моделирование в электронике1987 / с. 89-93 Численное моделирование диода шоттки на ЭВМRang, Toomas; Udal, AndresПроблемы моделирования полупроводниковых структур и сложных схем на ЭВМ1982 / с. 21-31 Численное моделирование мощных диодов Шоттки на ЭВМRang, Toomas; Udal, AndresИзвестия высших учебных заведений : международный ежемесячный научно-технический журнал. Радиоэлектроника1983 / с. 92-93 https://www.ester.ee/record=b2768571*est Численное моделирование технологического процесса изготовления полупроводниковых приборов. Модель диффузииNobel, PeterXXVII студенческая научно-техническая конференция вузов Прибалтийских республик, Белорусской ССР и Молдавской ССР, 19-21 апреля 1983 г. : тезисы докладов. Часть 31983 / с. 14 https://www.ester.ee/record=b1571572*est Численное моделирование технологического процесса полупроводниковых приборовRang, ToomasПроблемы моделирования полупроводниковых структур и сложных схем на ЭВМ1982 / с. 33-37 Электротехника и автоматикаLaansoo, Ants; Aarna, Olav; Metsanurm, Margus; Teder, Toomas; Kiitam, Andres; Saks, Eva; Land, Raul; Min, Mart; Remmel, Ülo; Ronk, Ants; Rang, Toomas1987 https://www.ester.ee/record=b1221893*est Электротехника и автоматикаKukk, Vello; Tamm, Uljas; Pikkov, Otto; Min, Mart; Velmre, Enn; Udal, Andres; Nurste, Ivar; Freidin, Boris; Rang, Toomas; Opotski, Aleksei; Laansoo, Ants; Männama, Vello; Järvalt, Aldur; Gurjanov, Boris; Lavrov, Mihhail; Belkina, I.I.; Plakk, Paul; Plakk, Peeter; Plakk, T.1987 https://www.ester.ee/record=b1224910*est Электротехника и автоматикаRüstern, Ennu; Keevallik, Andres; Kruus, Margus; Salum, Kaja; Berkman, Boriss; Tammemäe, Kalle; Alango, Villem; Kont, Toomas; Ubar, Raimund-Johannes; Lohuaru, Tõnu; Štraube, B.; Elst, G.; Bombik, B.; Viies, Vladimir; Gallai, S.; Rang, Toomas; Laansoo, Ants; Männama, Vello; Pikkov, Otto; Gurjanov, Boris; Opotski, Aleksei; Velmre, Enn1988 https://www.ester.ee/record=b1256708*est Электротехника и автоматикаMägi, Harri; Velmre, Enn; Pikkov, Mihhail; Orro, S.; Rang, Toomas; Gurjanov, Boris; Kruus, Margus; Salum, Kaja; Berkman, Boriss; Keevallik, Andres; Kasirova, Lilia; Kruus, Margus; Ellervee, Peeter; Ubar, Raimund-Johannes; Grigorjeva, Ksenja; Kont, Toomas1989 https://www.ester.ee/record=b1285446*est Электротехника и автоматикаKukk, Vello; Voolaine, Andrus; Jõgi, Aksel; Pall, Martin; Ubar, Raimund-Johannes; Kitsnik, Peeter; Toomsalu, Arvo; Grigorjeva, Ksenja; Lohuaru, Tõnu; Evartson, Teet; Božitš, V.I.; Galujev, G.A.; Sudnitsõn, Aleksander; Berkman, Boriss; Rang, Toomas; Velmre, Enn1982 https://www.ester.ee/record=b1328194*est Электротехника и автоматикаTamm, Uljas; Udal, Andres; Rang, Toomas; Freidin, Boris; Velmre, Enn; Nurste, Ivar; Laansoo, Ants; Männama, Vello; Järvalt, Aldur; Gurjanov, Boris; Pikkov, Otto; Rebane, Jüri; Aarna, Olav; Teder, Toomas1982 https://www.ester.ee/record=b1339926*est Электротехника и автоматикаLaansoo, Ants; Väljamäe, Gunnar; Tilk, Johan; Uutma, Toomas; Peterson, Jaak; Parve, Toomas; Logunov, Gennadi; Gurjanov, Boris; Gordon, Boris; Rüstern, Ennu; Velmre, Enn; Rang, Toomas; Kõverik, Kait; Järvalt, Aldur; Sildaru, Kalev1983 https://www.ester.ee/record=b1288985*est Электротехника и автоматикаUbar, Raimund-Johannes; Rang, Toomas; Velmre, Enn; Evartson, Teet; Voolaine, A.; Toome, Tõnis; Viilup, Agu; Sudnitsõn, Aleksander; Berkman, Boriss; Rüstern, Ennu; Leis, Paul; Keevallik, Andres; Kruus, Margus; Jüris, A.1984 https://www.ester.ee/record=b1549179*est Электротехника и автоматикаKukk, Vello; Tarnay, K.; Szekely, V.; Baji, P.; Farkas, G.; Masszi, F.; Kerecsen-Rencz, M.; Rang, Toomas; Plakk, Paul; Plakk, Peeter; Plakk, T.; Gurjanov, Boris; Männama, Vello; Laansoo, Ants; Pikkov, Otto; Rudski, V.A.; Kõverik, Kait1986 https://www.ester.ee/record=b1296007*est Электротехника и автоматикаMägi, Harri; Rüstern, Ennu; AArna, Olav; Kiitam, Andres; Land, Raul; Min, Mart; Ronk, Ants; Parve, Toomas; Rang, Toomas; Mahhitko, V.P.; Šendrik, M.G.; Tamm, Boris, inform.1986 https://www.ester.ee/record=b1296468*est