• Analysis of barrier inhomogeneities of P-type Al/4H-SiC Schottky barrier diodesZiko, Mehadi Hasan; Koel, Ants; Rang, Toomas; Toompuu, JanaSilicon Carbide and Related Materials 2019 : Selected peer-reviewed papers from International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan Materials science forum2020 / p. 960-972 https://doi.org/10.4028/www.scientific.net/MSF.1004.960 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-85089802997&origin=inward&txGid=d9ea1cc1bb56f121c6b9ca0d87873517
  • Effects of the inclusion of armchair graphene nanoribbons on the electrical conduction properties of NN-heterojunction 4H-6H/SiC diodesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasAdvanced Materials and Processing Technologies : 2nd International Conference on Sensors, Materials and Manufacturing (ICSMM 2018, November 19-21, 2018, Taiwan); International Conference on Materials Sciences and Nanomaterials (ICMSN 2018, July 11-13, 2018, United Kingdom) and the 2nd International Conference on Materials and Intelligent Manufacturing (ICMIM 2018, August 24-26, 2018, Japan)2019 / p. 29–35 : ill https://doi.org/10.4028/www.scientific.net/MSF.962.29 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-85071939660&origin=inward&txGid=cbbca1da36887a99977b5bf97c8e9fe3
  • Modeling and simulations of 4H-SiC/6H-SiC/4H-SiC single quantum-well light emitting diode using diffusion bonding techniqueRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasMicromachines2021 / art. 1499 https://doi.org/10.3390/mi12121499 https://www.scopus.com/sourceid/21100229176 https://www.scopus.com/record/display.uri?eid=2-s2.0-85120832822&origin=inward&txGid=bc0851c7a10e0969a162e223c838be39 https://jcr.clarivate.com/jcr-jp/journal-profile?journal=MICROMACHINES-BASEL&year=2022 https://www.webofscience.com/wos/woscc/full-record/WOS:000736239600001
  • Nano- and Micro-Scale simulations of Ge/3C-SiC and Ge/4H-SiC NN-heterojunction diodesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 2019 Materials science forum2020 / p. 490-496 https://doi.org/10.4028/www.scientific.net/MSF.1004.490 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-85089810011&origin=inward&txGid=62ac56cc823cce52f96865de6b58557f
  • Nano and micro-scale simulations of Si/4H-SiC and Si/3C-SiC NN-heterojunction diodesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon Carbide and Related Materials 2018 : 12thEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK2019 / p. 357–361 https://doi.org/10.4028/www.scientific.net/MSF.963.357 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-85071843869&origin=inward&txGid=57f6b4e5e5ed4d8b6319161fe45a7730
  • Nanoscale and microscale simulations of N-N junction heterostructures of 3C-4H silicon carbideRashid, Muhammad Haroon; Koel, Ants; Rang, Toomas; Gähwiler, Reto; Grosberg, Martin; Jõemaa, RaunoMaterials and contact characterisation VIII2017 / p. 235-248 : ill https://doi.org/10.2495/MC170241 https://www.scopus.com/sourceid/6000195382 https://www.scopus.com/record/display.uri?eid=2-s2.0-85039063073&origin=inward&txGid=ae51660a8a9b7f5fa98eaa8bca050af1
  • Simulations of benzene and hydrogen-sulfide gas detector based on single-walled carbon nanotube over intrinsic 4H-SiC substrateRashid, Muhammad Haroon; Koel, Ants; Rang, Toomas; Ziko, Mehadi HasanMicromachines2020 / art. 453, 13 p. : ill https://doi.org/10.3390/mi11050453 https://www.scopus.com/sourceid/21100229176 https://www.scopus.com/record/display.uri?eid=2-s2.0-85085951938&origin=inward&txGid=7adcf65370280809fcdbda7306c28fa2 https://jcr.clarivate.com/jcr-jp/journal-profile?journal=MICROMACHINES-BASEL&year=2022 https://www.webofscience.com/wos/woscc/full-record/WOS:000540761400003
  • Simulations of heterostructures based on 3C-4H and 6H-4H silicon carbide polytypesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon carbide and related materials 2017 : ICSCRM 2017 : selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and related materials, September 17-22, 2017, Washington, DC, USA2018 / p. 302-305 : ill https://doi.org/10.4028/www.scientific.net/MSF.924.302 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-85049022397&origin=inward&txGid=431a5ddd113d435bad943ef29ceddde9