• Stress relaxation mechanism by strain in the Si-SiO2 system and its influence on the interface propertiesKropman, Daniel; Seeman, Viktor; Dolgov, Sergei; Heinmaa, Ivo; Medvid, ArturPhysica Status Solidi (C) Current Topics in Solid State Physics2016 / p. 790 - 792 https://doi.org/10.1002/pssc.201600051 https://www.scopus.com/sourceid/4700152710 https://www.scopus.com/record/display.uri?eid=2-s2.0-84992626289&origin=resultslist&sort=plf-f&src=s&sid=cdfc52fb027a72eafe4f96d734f78c62&sot=b&sdt=b&s=DOI%2810.1002%2Fpssc.201600051%29&sl=27&sessionSearchId=cdfc52fb027a72eafe4f96d734f78c62&relpos=0 https://www.webofscience.com/wos/woscc/full-record/WOS:000399448900017