Investigation of silicon carbide diode structures via numerical simulations including anisotropic effectsVelmre, Enn; Udal, Andres; Masszi, F.; Nordlander, E.Simulation of semiconductor devices and processes. Vol. 61995 / p. 340-343: illhttps://link.springer.com/chapter/10.1007/978-3-7091-6619-2_83