Simulations of wide bandgap SiC N-N heterostructure diode

vastutusandmed
Udayan S Patankar, Ants Koel, Tamás Pardy
allikas
2020 IEEE International Conference on Consumer Electronics (ICCE), Las Vegas, NV, USA, January 4-6, 2020
ilmumiskoht
Danvers
kirjastus/väljaandja
ilmumisaasta
leheküljed
4 p
konverentsi nimetus, aeg
2020 IEEE International Conference on Consumer Electronics (ICCE), 4-6 Jan. 2020
konverentsi toimumispaik
Las Vegas, NV, USA
võtmesõna
carrier mobility
III-V semiconductors
semiconductor diodes
semiconductor heterojunctions
silicon compounds
technology CAD (electronics)
wide band gap semiconductors
ISSN
2158-4001
ISBN
978-7281-5186
märkused
Bibliogr.: 24 ref
keel
inglise
Patankar, U.S., Koel, A., Pardy, T. Simulations of wide bandgap SiC N-N heterostructure diode // 2020 IEEE International Conference on Consumer Electronics (ICCE), Las Vegas, NV, USA, January 4-6, 2020. Danvers : IEEE, 2020. 4 p.