A DLTS study of 4H-SiC-based p-n junctions fabricated by boron implantation

vastutusandmed
P. A. Ivanov, A. S. Potapov, T. P. Samsonova, O. Korol’kov, and N. Sleptsuk
allikas
ajakirja aastakäik number kuu
Vol. 45, 10
ilmumisaasta
leheküljed
p. 1306-1310 : ill
ISSN
1063-7826
märkused
Bibliogr.: 13 ref
keel
inglise
Ivanov, P.A., Potapov, A.S., Samsonova, T.P., Korolkov, O., Sleptsuk, N. A DLTS study of 4H-SiC-based p-n junctions fabricated by boron implantation // Semiconductors (2011) Vol. 45, 10, p. 1306-1310 : ill. https://doi.org/10.1134/S1063782611100101