prindi

A model of grain boundary scattering in polycrystalline doped semiconductors

autor
Makletsov, A.
Rimshans, J.
vastutusandmed
A.Makletsov, J.Rimshans
allikas
BEC : Baltic Electronics Conference : proceedings of the 4th Biennial Conference, October 9-14, 1994, Tallinn (Estonia). 2
ilmumiskoht
Tallinn
ilmumisaasta
1994
leheküljed
p. 529-531: ill
ISBN
9985-59-012-0
märkused
Bibl. 3 ref
Makletsov, A., Rimshans, J. A model of grain boundary scattering in polycrystalline doped semiconductors // BEC : Baltic Electronics Conference : proceedings of the 4th Biennial Conference, October 9-14, 1994, Tallinn (Estonia). 2. Tallinn, 1994. p. 529-531: ill.