Point defects interaction with extended defects and impurities and its influence on the Si-SiO2 system properties
autor
vastutusandmed
D.Kropman, U.Arbu, T.Kärner, Ü.Ugaste, E.Mellikov, M.Kauk, I.Heinmaa, A.Samoson, A.Medvid
allikas
Gettering and defect engineering in semiconductor technology. XI
ilmumiskoht
[S.l.]
kirjastus/väljaandja
ilmumisaasta
leheküljed
p. 333-338 : ill
ISBN
3-908451-13-2
märkused
Bibliogr.: 8 ref. (Solid state phenomena, ISSN 1012-0394 ; 108/109)
Kropman, D., Arbu, U., Kärner, T., Ugaste, Ü., Mellikov, E., Kauk, M., Heinmaa, I., Samoson, A., Medvid, A. Point defects interaction with extended defects and impurities and its influence on the Si-SiO2 system properties // Gettering and defect engineering in semiconductor technology. XI. [S.l.] : Elsevier, 2005. p. 333-338 : ill.