Comparison of the power losses in 1700V Si IGBT and SiC MOSFET modules including reverse conduction [Electronic resource]

autor
Platek, Tadeusz
vastutusandmed
Jacek Rąbkowski, Tadeusz Płatek
ilmumiskoht
[S.l.]
kirjastus/väljaandja
ilmumisaasta
leheküljed
[10] p. : ill. [USB]
konverentsi nimetus, aeg
17th European Conference on Power Electronics and Applications, EPE 2015 ECCE Europe, 8-10 September, 2015
konverentsi toimumispaik
Geneva, Switzerland
ISBN
9789075815238
märkused
Bibliogr.: 10 ref
TTÜ struktuuriüksus
keel
inglise
Rabkowski, J., Platek, T. Comparison of the power losses in 1700V Si IGBT and SiC MOSFET modules including reverse conduction [Electronic resource] // EPE'15 ECCE Europe : 8-10 September 2015, Geneva, Switzerland : 17th European Conference on Power Electronics and Applications. [S.l.] : CERN, 2015. [10] p. : ill. [USB]. http://dx.doi.org/10.1109/EPE.2015.7309444