Nanoscale and microscale simulations of N-N junction heterostructures of 3C-4H silicon carbide

autor
vastutusandmed
Haroon Rashid, Ants Koel, Toomas Rang, Reto Gähwiler, Martin Grosberg & Rauno Jõemaa
ilmumiskoht
Southampton
kirjastus/väljaandja
ilmumisaasta
leheküljed
p. 235-248 : ill
konverentsi nimetus, aeg
8th International Conference on Computational Methods and Experiments in Materials Characterisation, 21-23 June, 2017
konverentsi toimumispaik
Tallinn, Estonia
võtmesõna
transmission spectrum
projected device density of states (PDDOS)
ISSN
1746-4471
ISBN
978-1-78466-197-7
märkused
Bibliogr.: 24 ref
keel
inglise
Rashid, M.H., Koel, A., Rang, T., Gähwiler, R., Grosberg, M., Jõemaa, R. Nanoscale and microscale simulations of N-N junction heterostructures of 3C-4H silicon carbide // Materials and contact characterisation VIII. Southampton : WIT Press, 2017. p. 235-248 : ill. (WIT transactions on engineering sciences ; 116).