Two-dimensional nonisothermal analysis of the current crowding effect at nonuniform SiC Schottky contacts using device simulator DYNAMIT-2DT
autor
vastutusandmed
Raido Kurel and Andres Udal
ilmumiskoht
Tallinn
kirjastus/väljaandja
ilmumisaasta
leheküljed
p. 51-54 : ill
ISBN
9985-59-292-1
märkused
Bibliogr.: 13 ref
Kurel, R., Udal, A. Two-dimensional nonisothermal analysis of the current crowding effect at nonuniform SiC Schottky contacts using device simulator DYNAMIT-2DT // BEC 2002 : proceedings of the 8th Biennial Baltic Electronics Conference : October 6-9, 2002, Tallinn, Estonia. Tallinn : [Tallinn Technical University], 2002. p. 51-54 : ill.