A new high power factor single-phase diode rectifier with optimum ripple-power conversionSakkos, Tiiu; Sarv, VelloBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 229-232 : ill

A new high power factor three-phase diode rectifier using zero-sequence inductance in the third-harmonic filterSakkos, Tiiu; Sarv, VelloThe 4th International Conference Electric Power Quality and Supply Reliability : August 29...31, 2004, Pedase, Estonia : proceedings2004 / p. 67-70 : ill

A new low-distorting single-phase diode rectifier employing optimum ripple-power conversionSakkos, Tiiu; Sarv, Vello5th International Conference : Electric Power Quality and Supply Reliability : August 23-26, 2006, Viimsi, Estonia : conference proceedings2006 / p. 23-26 : ill

A power fast reverse turn-on diode thyristor ТБР143Graujnis, V.; Kovrov, A.; Kuzmin, V.; Hanstin, R.; Toomla, O.Automation, simulation & measurement : ASM'91 : 3rd biennal conference, Tallinn, October 7-11, 1991. Section S / Tallinn Technical University1992 / p. 132-138: ill

A unity-power factor three-phase diodeelementsSakkos, Tiiu; Sarv, VelloPEDC'99 : International Workshop on Power Electronics Equipment for Power Quality Improvement : Slubice, 19991999 / p. 72-85

Blood flow detection with diode laserMeigas, Kalju; Hinrikus, Hiie; Kattai, Rain; Lass, JaanusMedical physics2000 / 6, [CD-ROM], Digest of Papers of the 2000 World Congress on Medical Physics and Biomedical Engineering and [...] : Chicago 2000 : July 23-28, 2000, Chicago's Navy Pier, [3] p. : ill

Change in the parameters of electron-irradiated 4H-SIC schottky diodes as a function of the time during low-temperature isothermal annealingKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Toompuu, Jana; Sleptsuk, Natalja; Rang, ToomasSilicon Carbide and Related Materials 2018 : 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK2019 / p. 734-737 https://doi.org/10.4028/www.scientific.net/MSF.963.734 Conference proceeding at Scopus Article at Scopus

Characterization of the throughput beam of a ten-photodiode transmission trapdetectorKübarsepp, Toomas; White, MalcolmMetrologia2011 / p. 359-364 : ill https://iopscience.iop.org/article/10.1088/0026-1394/48/5/017/meta

Compact two-element transmission trap detector for 1550 nm wavelengthVaigu, Aigar; Kübarsepp, Toomas; Manoocheri, FarshidMeasurement science and technology2015 / p. 1-6 : ill

Comparative results of low temperature annealing of lightly doped n-layers of silicon carbide irradiated by protons and electronsKozlovski, Vitali V.; Korolkov, Oleg; Lebedev, Alexander A.; Toompuu, Jana; Sleptsuk, NataljaSilicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 20192020 / p. 231-236 https://doi.org/10.4028/www.scientific.net/MSF.1004.231 Conference Proceedings at Scopus Article at Scopus

Degragation of 600-V 4H-SiC Schottky diodes under irradation with 0,9 MeV electronsLebedev, Alexander A.; Davydovskaja, K. S.; Kozlovski, Vitali V.; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, Jana11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]2016 / p. 49

Dimensional accuracy for multi-element photodetectorDhoska, Klodian; Vabson, Viktor; Hermaste, Aigar; Kübarsepp, ToomasProceedings of NEWRAD 20142014 / p. 352 : ill

Dynamic characteristic evaluation of a 600V reverse blocking IGBT deviceKorkh, Oleksandr; Blinov, AndreiAdvances in Information, Electronic and Electrical Engineering (AIEEE) : proceedings of the 5th IEEE Workshop, november 24-25, 2017, Riga, Latvia2018 / p. 1-5 : ill https://doi.org/10.1109/AIEEE.2017.8270527

Esimene sõprus takisti ja dioodigaSinivee, VeljoHorisont2008 / 1, lk. 47-49 : ill

Experimental analysis of the dynamic performance of Si, GaAs and SiC diodesBlinov, Andrei; Vinnikov, Dmitri; Rang, ToomasBEC 2012 : 2012 13th Biennial Baltic Electronics Conference : proceedings of the 13th Biennial Baltic Electronics Conference : October 3-5, 2012, Tallinn, Estonia2012 / p. 49-52 : ill

Fault diagnosis of output-side diode-bridge in isolated DC-DC series resonant converterBakeer, Abualkasim Ahmed Ali; Chub, Andrii; Vinnikov, Dmitri2022 IEEE 7th International Energy Conference (ENERGYCON)2022 https://doi.org/10.1109/ENERGYCON53164.2022.9830339

High-attenuation tunnel-type detector for calibration of single-photon devicesKübarsepp, Toomas; Pokatilov, Andrei; Vabson, Viktor; Dhoska, KlodianProceedings of NEWRAD 20142014 / p. 115-116 : ill

High-sensitivity compact moving particles detector with an external-cavity laser diodeMeigas, KaljuTallinna Tehnikaülikooli Toimetised1994 / lk. 82-88: ill

Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide schottky diodesKozlovski, Vitali V.; Korolkov, Oleg; Davydovskaya, Klavdia S.; Lebedev, Alexander A.; Levinshteǐn, Michael E.; Sleptšuk, Natalja; Strel'Chuk, Anatolii M.; Toompuu, JanaTechnical Physics Letter2020 / p. 287 - 289 https://doi.org/10.1134/S1063785020030244 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

Investigation of charge carrier lifetime temperature-dependence in 4H-SiC diodesVelmre, Enn; Udal, AndresSilicon carbide and related materials 20062007 / p. 375-378 https://www.researchgate.net/publication/250348987_Investigation_of_Charge_Carrier_Lifetime_Temperature-Dependence_in_4H-SiC_Diodes

Investigation of P-i-n GaAs structures by DLTS method : the deep level transient spectroscopy in application to GaAs p-i-n structures for identification of deep levelsToompuu, Jana2010 https://www.amazon.com/Investigation-p-i-n-GaAs-structures-method/dp/383839223X

Large area 4H-SiC power Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailAbstracts of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany2000 / p. 303-304

Leakage currents in 4H-SiC JBS diodesIvanov, Pavel; Korolkov, Oleg; Sleptšuk, NataljaSemiconductors2012 / p. 397-400 : ill https://link.springer.com/article/10.1134/S106378261203013X

LPE technology for power GaAs diode structuresVoitovitš, Viktor; Rang, Toomas; Rang, GalinaEstonian journal of engineering2010 / 1, p. 11-22 : ill

Measurement of charge carrier lifetime temperature-dependence in 4H-SiC power diodesUdal, Andres; Velmre, EnnProceedings of the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) : Research Triangle Park, North-Carolina, USA, Oct. 10-15, 1999. Vol. 12000 / p. 781-784 https://www.scientific.net/MSF.338-342.781

An MPPT algorithm for PV systems based on a simplified photo-diode modelRestrepo, Carlos; Gonzalez-Castano, Catalina; Munoz, Javier; Chub, Andrii; Vidal-Idiarte, Enric; Giral, RobertoIEEE Access2021 / p. 33189-33202 https://doi.org/10.1109/ACCESS.2021.3061340 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

New active diode-switched transformer filters to improve power factor of three-phase diode rectifiers with capacitive smoothingSakkos, Tiiu; Sarv, VelloProceedings of the Estonian Academy of Sciences. Engineering1997 / 3, p. 158-170: ill

Non-destructive eddy current measurments for silicon carbide heterostructure analysisSahakyan, Armen; Koel, Ants; Rang, ToomasMaterials and contact characterisation VIII2017 / p. 49-60 : ill http://dx.doi.org/10.2495/MC170061

Numerical simulations for reverse recovery process investigations of LPE GaAs power diodesKoel, Ants; Rang, Toomas; Voitovitš, Viktor; Toompuu, JanaBEC 2012 : 2012 13th Biennial Baltic Electronics Conference : proceedings of the 13th Biennial Baltic Electronics Conference : October 3-5, 2012, Tallinn, Estonia2012 / p. 39-42 : ill

Numerical simulations of wideband SiC N-N heterostructure diodePatankar, Udayan Sunil; Koel, Ants; Pardy, TamasLAEDC 2020 : Latin American Electron Devices Conference, San José, Costa Rica, February 25-28, 20202020 / 4 p https://doi.org/10.1109/LAEDC49063.2020.9073489

A numerical transient analysis of a bulk-barrier diodeUdal, AndresSolid state electronics : an international journal1983 / p. 1130-1131 https://www.ester.ee/record=b1202249*est

Optimization of the alignment position for SPAD-detector calibrationDhoska, Klodian; Hofer, Helmuth; Lopez, Marco; Kübarsepp, Toomas; Kück, StefanDoctoral School of Energy and Geotechnology II : closing conference of the project : Pärnu, Estonia, January 12-17, 20152015 / p. 201-202 : ill

Progress in development of the resonant tunneling diodes as promising compact sources at the THz gap bottomUdal, Andres; Jaanus, Martin; Valušis, Gintaras; Kašalynas, Irmantas; Ikonic, Zoran; Indjin, DraganTHz for CBRN and explosives detection and diagnosis2017 / p. 169-178 http://doi.org/10.1007/978-94-024-1093-8_20

Pulse profile registration using self-mixing in diode laserMeigas, Kalju; Hinrikus, Hiie; Lass, Jaanus; Kattai, RainProceedings of the 20th Annual International Conference of the IEEE Engineering in Medicine and Biology Society. Vol. 20, no. 4, Biomedical Engineering Towards the Year 2000 and Beyond : Hong Kong SAR, China, October 29-November 1, 19981998 / p. 1875-1878 : ill

Recent progress in development of the resonant tunneling diode sources for the critical part of THz gapUdal, Andres; Jaanus, Martin; Valušis, Gintaras; Kašalynas, Irmantas; Ikonic, Zoran; Indjin, Dragan4th Annual Conference of COST Action MP1204 & SMMO2016 Conference : Lisbon, Portugal, 21-24 March 20162016 / [1] p

Self-mixing in a diode laser as a method for coherent photodetectionMeigas, Kalju; Hinrikus, Hiie; Lass, Jaanus; Kattai, RainProceedings of the Estonian Academy of Sciences. Engineering1998 / 4, p. 307-316

SEU study of wideband heterostructure diode for particle detectionPatankar, Udayan Sunil; Koel, Ants2021 IEEE International Conference on Consumer Electronics (ICCE)2021 / 4 p. : ill https://doi.org/10.1109/ICCE50685.2021.9427613 Conference Proceedings at Scopus Article at Scopus Article at WOS

SiC JBS diode symmetrical voltage doubler represented as the diffusion-welded stackKorolkov, Oleg; Land, Raul; Toompuu, Jana; Sleptšuk, Natalja; Rang, ToomasSilicon carbide and related materials 2017 : ICSCRM 2017 : selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and related materials, September 17-22, 2017, Washington, DC, USA2018 / p. 862–865 : ill https://doi.org/10.4028/www.scientific.net/MSF.924.862 Conference Proceedings at Scopus Article at Scopus

SiC Schottky diode for power convertersPikkov, Mihhail; Rang, ToomasPEDC 2001 : Power Electronics Devices Compatibility : 2nd conference : 3-5 September 2001, Zielona Gora, Poland2001 / p. 156-161 : ill

SiC Schottky diode for use in power convertorsPikkov, Mihhail; Rang, Toomas; Pokatilov, AndreiBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 245-246 : ill

SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSilicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece2017 / p. 697-700 : ill https://doi.org/10.4028/www.scientific.net/MSF.897.697

SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, Toomas11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]2016 / p. 42

SiC и GaAs диоды в устройствах силовой электроникиBlinov, Andrei; Vinnikov, Dmitri; Rang, ToomasТехнiчна електродинамiка : тематичний випуск : силова електрониiка та енергоефективнiсть2012 / с. 42-46 : ил

SiC-diodes forward surge current failure mechanisms : experiment and simulationUdal, Andres; Velmre, EnnMicroelectronics and reliability1997 / 10/11, p. 1671-1674

Simulations of a predictable quantum efficient detector with PC1DGran, Jarle; Kübarsepp, Toomas; Sildoja, Meelis; Manoocheri, Farshid; Ikonen, Erkki; Müller, IngmarMetrologia2012 / p. S130-S134 : ill https://research.aalto.fi/en/publications/simulations-of-predictable-quantum-efficient-detector-with-pc1d

Simulations of wide bandgap SiC N-N heterostructure diodePatankar, Udayan Sunil; Koel, Ants; Pardy, Tamas2020 IEEE International Conference on Consumer Electronics (ICCE), Las Vegas, NV, USA, January 4-6, 20202020 / 4 p https://doi.org/10.1109/ICCE46568.2020.9043130

Spectral properties of incoherent terahertz torch based on parabolic Ga(As,Bi)/AlGaAs quantum wellsKaraliunas, Mindaugas; Pagalys, Justas; Jakštas, Vytautas; Norkus, Ričardas; Urbanowicz, Andrzej; Devenson, Jan; Devenson, Renata; Udal, Andres; Valušis, GintarasTerahertz Emitters, Receivers, and Applications X : SPIE Optical Engineering + Applacations, 11-15 August 2019, San Diego, California, United States : proceedings SPIE digital library2019 https://doi.org/10.1117/12.2528428 Conference proceeding at Scopus Article at Scopus Article at WOS

Tartu diooditegija trügib ainulaadse tehnoloogiaga maailmaturule : [firma Clifton nõukogu liikme Toomas Rangi kommentaariga]Paris, Krister; Aru, Erik; Rang, ToomasPõhjarannik2005 / 23. märts, Ärileht, lk. 3

Temperature influence on current suppressing effect in SiC Schottky diodeKurel, Raido; Rang, ToomasProceedings of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany2000 / p. 1208-1209

Temperature influence on current suppressing effect in SiC Schottky diodeKurel, Raido; Rang, ToomasAbstracts of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany2000 / p. 217-218

The dependence of reverse recovery time on barrier capacitance and series on-resistance in Schottky diodesVeher, Oleksandr; Sleptšuk, Natalja; Toompuu, Jana; Korolkov, Oleg; Rang, ToomasMaterials and contact characterisation VIII2017 / p. 15-22 : ill http://dx.doi.org/10.2495/MC170021

The Schottky parameter test for combined diffusion welded and sputter large area contactsKorolkov, Oleg; Kuznetsova, Natalja; Rang, Toomas; Syrkin, A.; Dmitriev, V.Silicon carbide and related materials2007 / p. 737-740 https://www.scientific.net/MSF.556-557.737

Гетеродинирование инфракрасного излучения на МОМ диодеAstrak, R.V.; Soonurm, T.E.; Hinrikus, HiieТезисы докладов республиканской научно-технической конференции, посвященной 80-летию со дня изобретения радио А. С. Поповым1975 / с. 36-37 https://www.ester.ee/record=b1322122*est

Использование отрицательного сопротивления для компенсации активных потерьKulikov, V.; Toomet, MadisXVI студенческая научно-техническая конференция вузов Прибалтики, Белорусской ССР и Калининградской области, посвященная 100-летию со дня рождения В. И. Ленина : 20-25 апреля 1970 г. : (тезисы докладов). Электротехника и энергетика1970 / с. 54 https://www.ester.ee/record=b1379483*est

О расчете диодного детектора с закрытым входомEiskop, IlmarТруды по электротехнике и автоматике : сборник статей. [1]1963 / с. 77-83 : илл https://www.ester.ee/record=b2181953*est https://digikogu.taltech.ee/et/Item/c0cba674-7147-4659-abad-39f8419dd45e

О старении электролюминесцентных диодовValdna, Vello; Varvas, JüriПолупроводниковые материалы. 21972 / с. 113-116 : илл https://www.ester.ee/record=b1476073*est https://digikogu.taltech.ee/et/Item/75bd57ba-4543-4614-ab7c-3230cb13e005

Расчет ступени нагруженной диодным детекторомEiskop, IlmarТруды по электротехнике и автоматике : сборник статей. 21964 / с. 69-75 : илл https://www.ester.ee/record=b2181978*est https://digikogu.taltech.ee/et/Item/b53fe7c7-f8c2-4d67-895d-b1823e09c84b

Численное моделирование мощных диодов Шоттки на ЭВМRang, Toomas; Udal, AndresИзвестия высших учебных заведений : международный ежемесячный научно-технический журнал. Радиоэлектроника1983 / с. 92-93 https://www.ester.ee/record=b2768571*est

Численный расчет диода с точным учётом электронно-дырочного рассеянияVelmre, Enn; Udal, AndresСиловые быстродействующие полупроводниковые приборы : сборник статей1984 / с. 39-43 https://www.ester.ee/record=b1238033*est

Шумы мом диодаAstrik, R.; Soonurm, T.; Hinrikus, HiieТруды по радиотехнике : сборник статей. 21975 / с. 33-36 : илл https://www.ester.ee/record=b2190715*est https://digikogu.taltech.ee/et/Item/7c870ec1-0e49-4f2b-a354-8e2133afce48