A step félvezetőtechnológiai szimulációs programTarnay, K.; Drozdy, G.; Masszi, F.; Rang, ToomasMérés és automatika: megjelenik a Méréstechnikai és Automatizálási Tudományos Egyesület Szerkesztésében1981 / p. 460-464

A7 I²L kapu modellezese a TRAN-TRAN nemlineáris aramkölakalizös program segítségévelRang, ToomasHíradástechnika = Journal on communications, computers, convergence, contents, companies1980 / p. 216-220

Ambient temperature influence on current suppressing effect caused by self-heating phenomenon at 6H-SiC Schottky interfacesKurel, Raido; Rang, ToomasBEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedings1998 / p. 253-254: ill

An analysis of critical parameters of SiC JBS structuresKurel, Raido; Rang, Toomas; Poirier, LaurentProceedings of the Estonian Academy of Sciences. Engineering2006 / 3-2, p. 284-299 : ill

Analog front end components for bio-impedance measurement : current source design and implementation = Bioimpedantsi mõõteseadme analoogosa komponendid : vooluallika disain ja realisatsioonKasemaa, Argo2011 https://digi.lib.ttu.ee/i/?590

Analysis of barrier inhomogeneities of P-type Al/4H-SiC Schottky barrier diodesZiko, Mehadi Hasan; Koel, Ants; Rang, Toomas; Toompuu, JanaSilicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 20192020 / p. 960-972 https://doi.org/10.4028/www.scientific.net/MSF.1004.960 Conference proceedings at Scopus Article at Scopus

Analysis of deep level centers in GaAs pin-diode structuresKorolkov, Oleg; Toompuu, Jana; Rang, ToomasElektronika ir elektrotechnika = Electronics and electrical engineering2013 / [4 p. ] : ill

Analysis of deep level spectrum in GaAs p+-p-i-n-n+ structuresToompuu, Jana; Sleptšuk, Natalja; Korolkov, Oleg; Rang, ToomasMaterials characterization VII2015 / p. 283-294 : ill

Analysis of peak current for current crowding effect in 4H- and 6H-SiC Schottky structuresKurel, Raido; Rang, ToomasThe 7th Biennial Conference on Electronics and Microsystem Technology "Baltic Electronics Conference" : BEC 2000 : October 8 - 11, 2000, Tallinn, Estonia : conference proceedings2000 / p. 235-236 : ill

Analysis of the basic Schottky parameters for diffusion-welded aluminium contacts to p- and n-type SiCKorolkov, Oleg; Ljutov, Jevgeni; Kuznetsova, Natalja; Ruut, Jana; Rang, ToomasBEC 2004 : proceedings of the 9th Biennial Baltic Electronics Conference : October 3-6, 2004, Tallinn, Estonia2004 / p. 51-53 : ill

Andursignaalide töötlemine ja andursüsteemid : metoodiline juhend1989 https://www.ester.ee/record=b1240066*est

Andursignaalide töötlemine ja andursüsteemid : metoodiline juhend1988 https://www.ester.ee/record=b1239930*est

Application of power line communication technology in street lighting controlFarkas, Tekla D.; Kiraly, Tamás; Pardy, Tamas; Rang, Toomas; Rang, GalinaInternational journal of design and nature and ecodynamics2018 / p. 176–186 : ill https://doi.org/10.2495/DNE-V13-N2-176-186 Journal metrics at Scopus Article at Scopus Article at WOS

Arukad põhjendused pole veel kedagi veennud : [TTÜ arengutest tulevikus]Rang, ToomasMente et Manu2004 / 3. nov., lk. 2, 4 : fot https://www.ester.ee/record=b1242496*est

ASIC for alcohol sensorKasemaa, Argo; Rang, ToomasBEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedings1998 / p. 283-286: ill

Az I²L sztatikus zavar védettségeRang, ToomasMérés és automatika: megjelenik a Méréstechnikai és Automatizálási Tudományos Egyesület Szerkesztésében1980 / p. 466-468

Balti elektroonika konverents (BEC'96)Rang, ToomasSAT-Meedia ja Elektroonika1996 / 8, lk. 14-15: ill

Balti elektroonikakonverents 2002 : [TTÜ elektroonikainstituudi korraldusel toimuvast rahvusvahelisest konverentsist BEC'2002]Rang, ToomasMente et Manu2002 / 8. okt., lk. 1 : ill https://www.ester.ee/record=b1242496*est

Balti elektroonikakonverents BEC 2010Rang, ToomasTallinna Tehnikaülikooli aastaraamat 20102011 / lk. 279-280

Balti elektroonikakonverentsidRang, ToomasTallinna Tehnikaülikooli aastaraamat 20112012 / lk. 308-316

Baltic Electronics Conference 1996 : (BEC' 96)Rang, ToomasBaltic electronics1995 / 1, p. 38

Baltic Electronics Conference (BEC) series : long and winding roadRang, ToomasBEC 2010 : 2010 12th Biennial Baltic Electronics Conference : proceedings of the 12th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 4-6, 2010, Tallinn, Estonia2010 / p. 11-16

Baltic Electronics Conference BEC'96Rang, ToomasBaltic electronics1996 / 3, p. 25-26

BEC : Baltic Electronics Conference : proceedings of the 4th Biennial Conference, October 9-14, 1994, Tallinn (Estonia)Rang, Toomas; Min, Mart; Ubar, Raimund-Johannes1994

BEC 2002 : proceedings of the 8th Biennial Baltic Electronics Conference : October 6-9, 2002, Tallinn, EstoniaRang, Toomas2002 http://www.ester.ee/record=b2150914*est

BEC 2004 : proceedings of the 9th Biennial Baltic Electronics Conference : October 3-6, 2004, Tallinn, Estonia2004 http://www.ester.ee/record=b2150914*est

BEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics ConferenceRang, Toomas2006 http://www.ester.ee/record=b2150914*est

BEC 2006 järelkajad : [intervjuu Toomas Rangiga elektroonikute konverentsi teemal]Rang, Toomas; Ummelas, MartMente et Manu2006 / 18. okt., lk. 2 : fot https://www.ester.ee/record=b1242496*est

BEC 2008 : 2008 International Biennial Baltic Electronics Conference : proceedings of the 11th Biennial Baltic Electronics Conference : Tallinn University of Technology : October 6-8, 2008, Tallinn, EstoniaRang, Toomas2008 http://www.ester.ee/record=b2150914*est

BEC 2010 : 2010 12th Biennial Baltic Electronics Conference : proceedings of the 12th Biennial Baltic Electronics Conference : Tallinn University of Technology : October 4-6, 2010, Tallinn, EstoniaRang, Toomas2010 http://www.ester.ee/record=b2150914*est

BEC 2012 : 2012 13th Biennial Baltic Electronics Conference : proceedings of the 13th Biennial Baltic Electronics Conference : October 3-5, 2012, Tallinn, Estonia2012 http://www.ester.ee/record=b2150914*est

BEC 2014 : 2014 14th Biennial Baltic Electronics Conference : proceedings of the 14th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 6-8, 2014, Tallinn, EstoniaRang, Toomas2014 http://www.ester.ee/record=b2150914*est

BEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, EstoniaRang, Toomas2016 http://www.ester.ee/record=b2150914*est

BEC'96 : the 5th Biennial Baltic Electronics Conference, October 7-11, 1996, Tallinn, Estonia : proceedingsRang, Toomas; Min, Mart; Ubar, Raimund-Johannes1996

BEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedingsRang, Toomas1998

Can 3D printing bring droplet microfluidics to every lab? - A systematic reviewGyimah, Nafisat; Scheler, Ott; Rang, Toomas; Pardy, TamasMicromachines2021 / art. 339 https://doi.org/10.3390/mi12030339 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

Change in the parameters of electron-irradiated 4H-SIC schottky diodes as a function of the time during low-temperature isothermal annealingKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Toompuu, Jana; Sleptsuk, Natalja; Rang, ToomasSilicon Carbide and Related Materials 2018 : 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK2019 / p. 734-737 https://doi.org/10.4028/www.scientific.net/MSF.963.734 Conference proceeding at Scopus Article at Scopus

Characterization of deep level traps in semiconductor structures using numerical experimentsKoel, Ants; Rang, Toomas; Rang, GalinaMaterials characterization VII2015 / p. 253-261 : ill

Characterization of silicon carbide (SiC) and graphene-based novel semiconductor devices = Ränikarbiidil (SiC) ja grafeenil pōhinevate uudsete pooljuhtstruktuuride karakteriseerimineRashid, Muhammad Haroon2021 https://www.ester.ee/record=b5397240*est https://digikogu.taltech.ee/et/Item/a64fd50e-125c-49ad-b0a6-6ad2e01b8bfa https://doi.org/10.23658/taltech.6/2021

Characterization of the temperature dependent behavior of snappy phenomenon by the switching-off of GaAs power diode structuresKoel, Ants; Rang, Toomas; Rang, GalinaHeat transfer XIII : simulation and experiments in heat and mass transfer2014 / p. 439-449 : ill

Charge carrier transport in SiC Schottky interfaces : shape factor approachKurel, Raido; Rang, Toomas; Rang, Galina; Kasemaa, ArgoBEC 2008 : 2008 International Biennial Baltic Electronics Conference : proceedings of the 11th Biennial Baltic Electronics Conference : Tallinn University of Technology : October 6-8, 2008, Tallinn, Estonia2008 / p. 87-90 : ill

Circuit simulation program oriented physical modeling of integrated circuit elementsRang, Toomas; Tarnay, K.; Szekely, V.Periodica polytechnica. Electrical engineering = Электротехника1980 / p. 37-45 https://www.ester.ee/record=b1198855*est

Clamp mode package diffusion welded power SiC Schottky diodesKorolkov, Oleg; Kuznetsova, Natalja; Rang, ToomasBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 55-58 : ill

CMOS low power current source with reduced circuit complexityKasemaa, Argo; Rang, Toomas; Annus, PaulIEEE 9th International New Circuits and Systems Conference (NEWCAS) : Bordeaux-France, 26-29 June 2011 : [proceedings]2011 / p. 17-20 https://www.semanticscholar.org/paper/CMOS-low-power-current-source-with-reduced-circuit-Kasemaa-Rang/f5e490ce914a4c6c3195586a28147211c928c28d

CMOS SP chip for resistor type semiconductor gas sensorsKasemaa, Argo; Rang, ToomasThe 7th Biennial Conference on Electronics and Microsystem Technology "Baltic Electronics Conference" : BEC 2000 : October 8 - 11, 2000, Tallinn, Estonia : conference proceedings2000 / p. 255-256 : ill

Cogniflow-drop : integrated modular system for automated generation of droplets in microfluidic applicationsJõemaa, Rauno; Gyimah, Nafisat; Ashraf, Kanwal; Pärnamets, Kaiser; Zaft, Alexander; Scheler, Ott; Rang, Toomas; Pardy, TamasIEEE Access2023 / p. 104905-104929 https://doi.org/10.1109/ACCESS.2023.3316726

Compact empirical model for droplet generation in a Lab-on-Chip cytometry systemPärnamets, Kaiser; Udal, Andres; Koel, Ants; Pardy, Tamas; Gyimah, Nafisat; Rang, ToomasIEEE Access2022 / p. 127708-127717 https://doi.org/10.1109/ACCESS.2022.3226623 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

Comparative characteristics of 6H- and 4H-SiC surfaces in diffusion weldingKorolkov, Oleg; Rang, ToomasProceedings of the Estonian Academy of Sciences. Engineering2001 / 4, p. 347-353 : ill

Comparative characteristics of diffusion welded Al contacts to 6H- and 4H-SiC substratesKorolkov, Oleg; Rang, ToomasThe 7th Biennial Conference on Electronics and Microsystem Technology "Baltic Electronics Conference" : BEC 2000 : October 8 - 11, 2000, Tallinn, Estonia : conference proceedings2000 / p. 23-26 : ill

Comparative characteristics of diffusion-welded high-voltage stacks and connected in series Schottky diodesSleptšuk, Natalja; Korolkov, Oleg; Land, Raul; Toompuu, Jana; Annus, Paul; Rang, ToomasBEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia2016 / p. 39-42 : ill http://www.ester.ee/record=b2150914*est

Comparative investigation of the graphene-on-silicon carbide and CVD graphene as a basis for biosensor applicationSleptšuk, Natalja; Lebedev, Alexander A.; Eliseyev, Ilya; Korolkov, Oleg; Toompuu, Jana; Land, Raul; Mikli, Valdek; Zubov, Alexander; Rang, ToomasModern Materials and Manufacturing 2019 : 12th International DAAAM Baltic Conference and 27th International Baltic Conference BALTMATTRIB 2019. Selected, peer reviewed papers from the conference Modern Materials and Manufacturing 2019 (MMM 2019), April 24-26, 2019, Tallinn, Estonia2019 / p. 185-190 : ill https://www.ester.ee/record=b5235278*est https://www.scientific.net/KEM.799.185 https://doi.org/10.4028/www.scientific.net/KEM.799.185 Conference proceeding at Scopus Article at Scopus

Comparison of GaAs based high voltage diode stacksVoitovitš, Viktor; Kuznetsova, Natalja; Rang, Toomas; Pikkov, Mihhail; Ruut, JanaEPE-PEMC 2004 : 11th International Power Electronics and Motion Control Conference : 2-4 September 2004, Riga, Latvia : proceedings. Vol. 2 of 7, Devices, control of converters, measurements and sensors2004 / p. 2-391 - 2-394 : ill

Comparison of individual SiC JBS chips and JBS stacks connected in series by diffusion weldingSleptšuk, Natalja; Korolkov, Oleg; Toompuu, Jana; Rang, ToomasBEC 2010 : 2010 12th Biennial Baltic Electronics Conference : proceedings of the 12th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 4-6, 2010, Tallinn, Estonia2010 / p. 81-84 : ill

Comparison of the dynamic behaviour of complementary 6H- and 4H-SiC Schottky structures using numerical simulationRang, Toomas; Kurel, RaidoProceedings of the Estonian Academy of Sciences. Engineering2004 / 3, p. 173-178

Comparison of turn-on characteristics of thyristor structures based on wide bandgap materialsRang, Toomas; Vaselo, Aleksandr; Rang, Galina; Pikkov, MihhailProceedings of the Estonian Academy of Sciences. Engineering2007 / 4, p. 445-454 : ill

Complementary multi guard ring JBS structures: numerical analysisKoel, Ants; Rang, Toomas; Rang, GalinaBEC 2010 : 2010 12th Biennial Baltic Electronics Conference : proceedings of the 12th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 4-6, 2010, Tallinn, Estonia2010 / p. 85-88 : ill

Computer aided examination of I²L structuresRang, ToomasInternational journal of electronics1981 / p. 445-463 https://doi.org/10.1080/00207218108901286

Computer aided examination of the avalanche multiplication in Si, GaA and IkP complementary pn-junctionsRang, ToomasModelling, simulation and control1985 / p. 23-40

Computer aided modeling of high frequency power M-S structuresRang, Toomas; Udal, AndresProceedings of the seventh Colloquium on Microwave Communication : Budapest, 6-10 Sept. 19821982 / p. 238-241

Computer aided simulation of dynamic behaviour of the I²L flip-flopRang, ToomasMicroelectronics '82 : proceedings of the 3. Microelectronics Conference of the Socialist Countries ; from 5.-7. May 1982, Siófok, Hungary1982 / p. 153-154

Computer aided simulation of power Scottky DiodesRang, Toomas; Koel, Ants; Udal, AndresModeling, Simulation and Control1985 / p. 1-13

Computer-aided examination of the I²L current source and the behaviour of the I²L flip-flop used in static memory cellsRang, ToomasPeriodica polytechnica. Electrical engineering = Электротехника1981 / p. 159-165 : joon https://www.ester.ee/record=b1198855*est https://pp.bme.hu/ee/article/view/4776/3881

Contact manufacturing technologies for wide band-gap semiconductor materials (invited)Rang, ToomasBEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedings1998 / p. 17-28: ill

Current crowding phenomenon in JBC structuresRang, Toomas; Kurel, Raido; Higelin, G.; Poirier, LaurentComputer Methods and Experimental Measurements for Surface Effects and Contact Mechanics VII2005 / p. 387-396 https://www.witpress.com/elibrary/wit-transactions-on-engineering-sciences/49/15383

Current suppressing effect in alloy metal and 6H-SiC substrate Schottky contactsRang, Toomas; Blum, AlfonsBEC'96 : the 5th Biennial Baltic Electronics Conference, October 7-11, 1996, Tallinn, Estonia : proceedings1996 / p. 81-84: ill

Design of Cyber Bio-analytical Physical Systems : formal methods, architectures, and multi-system interaction strategiesAshraf, Kanwal; Le Moullec, Yannick; Pardy, Tamas; Rang, ToomasMicroprocessors and microsystems2023 / art. 104780, 14 p. : ill https://doi.org/10.1016/j.micpro.2023.104780

Design of two stage high efficiency power amplifier in 0.13um technology for 2.4 GHz ISM band applicationsPatankar, Udayan Sunil; Koel, Ants; Rang, ToomasJournal of Advanced Research in Dynamical and Control Systems2018 / p. 822–829 http://www.jardcs.org/backissues/abstract.php?archiveid=3585

Development of a low-cost, wireless smart thermostat for isothermal DNA amplification in lab-on-a-chip devicesPardy, Tamas; Sink, Henri; Koel, Ants; Rang, ToomasMicromachines2019 / art. 437, 13 p. : ill https://doi.org/10.3390/mi10070437 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

Development of automated detection and wireless reporting for a handheld point-of-care testPardy, Tamas; Filograno, Leonardo; Baumann, Cindy; Rang, Toomas2020 17th Biennial Baltic electronics conference, Tallinn, Estonia, October 6-8, 2020 : proceedings2021 / 4 p. : ill https://doi.org/10.1109/BEC49624.2020.9276773

Development of e-learning course: myths and realityRang, Toomas; Rang, GalinaSymposium "Topical Problems of Education in the Field of Electrical and Power Engineering" : Kuressaare, Estonia, January 19-24, 20042004 / p. 9-11

Development of national standard for voltage unit based on solid-state references = Pinge mõõtühiku riigietaloni arendamise Zener-tüüpi etalonpingeallikate baasilPokatilov, Andrei; Kübarsepp, Toomas2008 https://www.ester.ee/record=b2425069*est

Development of temperature control solutions for non-instrumented nucleic acid amplification tests (NINAAT)Pardy, Tamas; Rang, Toomas; Tulp, IndrekMicromachines2017 / p. 1-11 : ill http://dx.doi.org/10.3390/mi8060180

Diffusion welded Al contacts to p-type SiCKorolkov, Oleg; Rang, Toomas; Syrkin, A.; Dmitriev, V.Silicon Carbide and Related Materials 2002 : ECSCRM20022003 / p. 697-700

Diffusion welded contacts and related art applied to semiconductor materialsKorolkov, Oleg; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasElektronika ir elektrotechnika = Electronics and electrical engineering2011 / p. 67-70 : ill https://eejournal.ktu.lt/index.php/elt/article/view/359

Diffusion welded contacts for silicon semiconductor devicesKorolkov, Oleg; Rang, ToomasProceedings of the International Conference and Exhibition Micro Materials : MicroMat '97, April 16-18, 1997, Berlin, Germany1997 / p. 1035-1037

Diffusion welding contacts to 6H-SiC substratesKorolkov, Oleg; Rang, Toomas43. Internationales Wissenschaftliches Kolloquium, 21.-24.09.19981998 / p. 47-48

Diffusion welding techniques for power SiC Schottky packagingKorolkov, Oleg; Rang, Toomas; Syrkin, A.; Dmitriev, V.Final programm of the 12th International Conference on Silicon Carbide and Related Materials : ICSCRM2005 : Pittsburgh, PA, USA2005 / p. 71

Diffusion welding techniques for power SiC Schottky packagingKorolkov, Oleg; Rang, Toomas; Syrkin, A.; Dmitriev, V.Silicon carbide and related materials 20052006 / p. 919-922

Diffusion welding technology as a method of metallization of ceramic substratesKorolkov, Oleg; Rang, ToomasBEC'96 : the 5th Biennial Baltic Electronics Conference, October 7-11, 1996, Tallinn, Estonia : proceedings1996 / p. 479-482: ill

Diffusion welding technology for 6H-SiC substratesKorolkov, Oleg; Rang, ToomasBEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedings1998 / p. 251-252: ill

Diffusion welding technology for wide bandgap materialsRang, Toomas; Korolkov, OlegProceedings of the European COPEX Seminar, June 17-19, 1997, Vienna, Austria1997 / p. 124-127

Digital twin for controlled generation of water-in-oil microdroplets with required sizeGyimah, Nafisat; Scheler, Ott; Rang, Toomas; Pardy, Tamas2022 23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 25-27 April 2022, St Julian, Malta : proceedings2022 / p. 85-91 https://doi.org/10.1109/EuroSimE54907.2022.9758876

DLTS measurements on 4H-SiC JBS-diodes with boron implanted local p-n junctionsIvanov, Pavel; Korolkov, Oleg; Samsonova, Tatyana; Sleptšuk, Natalja; Potapov, Alexander; Toompuu, Jana; Rang, ToomasMaterials science forum2011 / p. 409-412

Education environment for electronics and microsystemsAjaots, Maido; Min, Mart; Rang, Toomas; Ubar, Raimund-JohannesMicroelectronics education : proceedings of the European Workshop, Grenoble, France, 5-6 Feb 19961996 / p. 145-148: ill

Education environment for electronics and microsystemsAjaots, Maido; Min, Mart; Rang, Toomas; Ubar, Raimund-JohannesFirst European Workshop on Microelectronics Education, Villard de Lans, France, February 5-6, 1996 : proceedings1996 / p. 39

Effects of the inclusion of armchair graphene nanoribbons on the electrical conduction properties of NN-heterojunction 4H-6H/SiC diodesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasAdvanced Materials and Processing Technologies : 2nd International Conference on Sensors, Materials and Manufacturing (ICSMM 2018, November 19-21, 2018, Taiwan); International Conference on Materials Sciences and Nanomaterials (ICMSN 2018, July 11-13, 2018, United Kingdom) and the 2nd International Conference on Materials and Intelligent Manufacturing (ICMIM 2018, August 24-26, 2018, Japan)2019 / p. 29–35 : ill https://doi.org/10.4028/www.scientific.net/MSF.962.29 Conference proceeding at Scopus Article at Scopus

Ela ise ja lase ka teistel elada! : [T.Rangi nägemus Tehnikaülikooli arengust eelseisvaks viieks aastaks]Rang, ToomasMente et Manu2005 / 12. jaan., lk. 5-6. (TTÜ 2005-2010) https://www.ester.ee/record=b1242496*est

Electron microscopy study of contact layers in n-type 4H-SiC after diffusion weldingKorolkov, Oleg; Sleptšuk, Natalja; Sitnikova, A.; Rang, ToomasBEC 2008 : 2008 International Biennial Baltic Electronics Conference : proceedings of the 11th Biennial Baltic Electronics Conference : Tallinn University of Technology : October 6-8, 2008, Tallinn, Estonia2008 / p. 91-94 : ill

Electronics design and testUbar, Raimund-Johannes; Kruus, Margus; Rang, ToomasPublic service review : European Union. 132007 / p. 52-53

Electronics in EstoniaRang, ToomasBEC'96 : the 5th Biennial Baltic Electronics Conference, October 7-11, 1996, Tallinn, Estonia : proceedings1996 / p. 49-56: ill

Elektroonika - mis see on?Rang, ToomasElektroonika 2004 : XI rahvusvahelise telekommunikatsioonipäeva materjalid2004 / lk. 7-9

Elektroonika Eestis - tööstus, haridus, teadusRang, ToomasTallinna Tehnikaülikooli aastaraamat 19961997 / lk. 221-230

Elektroonika Eestis - tööstus, teadus, haridus - järelmõtteidRang, ToomasInsenerikultuur Eestis. 31997 / lk. 139-147 https://www.ester.ee/record=b1063622*est

Elektroonika kui Eesti innovatsioonisüsteemi infrastruktuurMin, Mart; Rang, Toomas; Ubar, Raimund-JohannesEesti teadlaste kongress, 11.-15. augustini 1996. a. Tallinnas : ettekannete kokkuvõtted1996 / lk. 265 https://www.ester.ee/record=b1052731*est

Elektroonikainseneride harimisest meil ja mujalRang, ToomasElektroonika 2000 : VII rahvusvahelise telekommunikatsioonipäeva konverentsi ettekannete materjalid2000 / lk. 7-14

Elektroonikaspetsialistide koolitus tööstuse tarbeks - Elektroonikainstituudi visioonRang, ToomasRaadiotehnika 2001 : VIII rahvusvahelise telekommunikatsioonipäeva materjalid2001 / lk. 110-114 : ill

Elektroonikud pidasid konverentsi : [BEC'98]Rang, ToomasTehnikaülikool1998 / 12. okt., lk. 1

11th Baltic Electronics conference BEC2008Rang, ToomasEstonian journal of engineering2010 / 1, p. 5-6 : ill

Estonian electronic industryRang, ToomasAutomation, simulation & measurement : ASM'91 : 3rd biennal conference, Tallinn, October 7-11, 1991. Section S / Tallinn Technical University1992 / p. 4-10: ill

Estonian electronic industry - May 1995Rang, Toomas; Tani, Harry; Tamm, UljasBaltic electronics1995 / 1, p. 12-16: ill

Et progressirongist mitte maha jääda : [V Balti Elektroonika Konverents]Rang, ToomasTehnikaülikool1996 / 11. okt., lk. 1-2 https://www.ester.ee/record=b5309277*est

E-õppe müüdid ja tegelikkus : omad ja laenatud kogemusedRang, ToomasAvaja2004 / 21. jaan., lk. 8 : portr

Exercises. Final test questions : supplementary material in the course "Microelectronics"Rang, Toomas2003 https://www.ester.ee/record=b1766979*est

Experimental analysis of the dynamic performance of Si, GaAs and SiC diodesBlinov, Andrei; Vinnikov, Dmitri; Rang, ToomasBEC 2012 : 2012 13th Biennial Baltic Electronics Conference : proceedings of the 13th Biennial Baltic Electronics Conference : October 3-5, 2012, Tallinn, Estonia2012 / p. 49-52 : ill

Experimental study of surface distortions in silicon carbide caused by diffusion weldingMizsei, Janos; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasBEC 2012 : 2012 13th Biennial Baltic Electronics Conference : proceedings of the 13th Biennial Baltic Electronics Conference : October 3-5, 2012, Tallinn, Estonia2012 / p. 53-56 : ill

Feasibility study of Si and SiC MOSFETs in high-gain DC/DC converter for renewable energy applicationsBlinov, Andrei; Chub, Andrii; Vinnikov, Dmitri; Rang, ToomasProceedings : IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society : Austria Center Vienna, Vienna, Austria, 10-14 November, 20132013 / p. 5975-5978 : ill

Félvezető technológia számítógépes szimulációjaRang, Toomas; Tarnay, K.; Mizsei, JanosHíradástechnika = Journal on communications, computers, convergence, contents, companies1980 / p. 327-328

Finite element modelling for the optimization of microheating in disposable molecular diagnosticsPardy, Tamas; Rang, Toomas; Tulp, IndrekInternational journal of computational methods and experimental measurements2017 / p. 13-22 : ill http://dx.doi.org/10.2495/CMEM-V5-N1-13-22

Finite element modelling for the optimization of microheating in disposable molecular diagnostics [Electronic resource]Pardy, Tamas; Rang, Toomas; Tulp, Indrek14th International Conference on Simulation and Experiments in Heat Transfer and its Applications : Heat Transfer 2016 : 7-9 September, 2016 Ancona, Italy : unedited papers2016 / p. [144-155] : ill. [USB]

Finite element modelling of the resistive heating of disposable molecular diagnostics devicesPardy, Tamas; Rang, Toomas; Tulp, IndrekComputational methods and experimental measurements XVII2015 / p. 381-391 : ill http://dx.doi.org/10.2495/CMEM150341

First principles simulations of phenol and methanol detector based on pristine graphene nanosheet and armchair graphene nanoribbonsRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSensors2019 / art. 2731, 14 p. : ill https://doi.org/10.3390/s19122731 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

Foreford : twenty years of Baltic Electronics Conference in TallinnRang, ToomasProceedings of the Estonian Academy of Sciences. Engineering2006 / 3-2, p. 244-245

Formation of Diffusion welded Al contacts to semiconductor silicon carbideKorolkov, Oleg2004

Formation of large area Al contacts on 6H- and 4H-SiC substratesKorolkov, Oleg; Rang, ToomasSilicon Carbide and Related Materials : ECSCRM2000 : proceedings of the 3rd European Conference on Silicon Carbide and Related Materials : Kloster Banz, Germany, September 20002001 / p. 603-606 : ill

Formation of large area Al contacts on 6H- and 4H-SiC substratesKorolkov, Oleg; Rang, ToomasAbstracts of the 3rd European Conference on Silicon Carbide and Related Materials : ECSCRM'2000 : Sept. 3-7, 2000, Kloster Banz, Germany2000 / p. 188

A fully differential, 200MHz, programmable gain, level-shifting, hybrid amplifier/power combiner/test buffer, using pre-distortion for enhanced linearityKampus, Vahur; Rang, Toomas; Knaller, DanielPRIME 2018 : 14th Conference on PhD Research in Microelectronics and Electronics2018 / p. 5-8 : ill https://doi.org/10.1109/PRIME.2018.8430372

GaAs based diffusion welded high voltage diode stacks [Electronic resource]Toompuu, Jana; Korolkov, Oleg; Sleptšuk, Natalja; Voitovitš, Viktor; Rang, ToomasIEEE International Conference on Semiconductor Electronics CD-ROM Proceedings2010 / [4] p

Generalized analytical model for SiC polytypic heterojunctionsRang, Toomas; Tabun, Indrek; Rang, Galina; Koel, AntsEstonian journal of engineering2011 / 2, p. 151-157 : ill

Globaliseerumisest ja konkursivõimest ülikoolimaailmasRang, Toomas; Hendre, EnnMente et Manu2002 / 19., 26. veebr., lk. 2 https://www.ester.ee/record=b1242496*est

High performance GaAs power diodesVoitovitš, Viktor; Rang, Toomas; Rang, Galina; Pikkov, MihhailBEC 2008 : 2008 International Biennial Baltic Electronics Conference : proceedings of the 11th Biennial Baltic Electronics Conference : Tallinn University of Technology : October 6-8, 2008, Tallinn, Estonia2008 / p. 111-114 : ill

High quality LPE GaAs power diodes with DLTS methodRang, ToomasPublic service review : European Union2009 / p. 423

High quality metal ceramic interfaces using diffusion welding technologyKorolkov, Oleg; Rang, ToomasProceedings of the ASDAM'96, Oct. 20-24, 1996, Bratislava, Slovakia1996 / p. 309-312

High voltage diffusion‐welded stacks on the basis of SiC Schottky diodesKorolkov, Oleg; Sleptšuk, Natalja; Annus, Paul; Land, Raul; Rang, ToomasICSRM 2015 : program guide2015 / p. 73

High voltage GaAs diode stacks : the choice of epistructures for assemblingRang, Toomas; Voitovitš, Viktor; Kuznetsova, NataljaDesign, Test, Integration and Packaging of MEMS/MOEMS - DTIP2004 : 12-14 May 2004, Montreux, Switzerland2004 / p. 199-202 : ill

High-voltage diffusion‐welded stacks on the basis of SiC Schottky diodesKorolkov, Oleg; Sleptšuk, Natalja; Annus, Paul; Land, Raul; Rang, ToomasSilicon carbide and related materials 2015 (ICSRM 2015) : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy2016 / p. 790-794 : ill http://dx.doi.org/10.4028/www.scientific.net/MSF.858.790

Hot spots caused by contact inhomogeneities in 4H- and 6H-SiC Schottky structuresKurel, Raido; Rang, ToomasAdvanced Computational Methods in Heat Transfer VI2000 / p. 437-444 https://www.witpress.com/elibrary/wit-transactions-on-engineering-sciences/27/4468

I²L új irányrat a bipoláris technikában IRang, ToomasMérés és automatika: megjelenik a Méréstechnikai és Automatizálási Tudományos Egyesület Szerkesztésében1979 / p. 191-195

I²L, új irányrat a bipoláris technikában IIRang, ToomasMérés és automatika: megjelenik a Méréstechnikai és Automatizálási Tudományos Egyesület Szerkesztésében1979 / p. 279-283

Innovatsioon - võimalus või vajadusRang, ToomasArengusuundumused Eestis ja Võrumaal1997 / lk. 11-18

Instrument-free Lab-on-a-Chip DNA amplification test for pathogen detection  [Online resource]Pardy, Tamas; Rang, Toomas; Kremer, Clemens; Tulp, IndrekBEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 20182018 / 4 p. : ill https://doi.org/10.1109/BEC.2018.8600991

Integraalskeemide projekteerimine : metoodiline juhend1988 https://www.ester.ee/record=b1239938*est

Integrált áramköri elemek fizikai modellezése aramkölanalizös program segítségévelRang, Toomas; Tarnay, K.; Szekely, V.Híradástechnika = Journal on communications, computers, convergence, contents, companies1980 / p. 322-326

Integrated self-regulating resistive heating for isothermal nucleic acid amplification tests (NAAT) in Lab-on-a-Chip (LoC) devicesPardy, Tamas; Tulp, Indrek; Kremer, Clemens; Rang, Toomas; Stewart, RayPLoS ONE2017 / p. 1-11 : ill https://doi.org/10.1371/journal.pone.0189968

Interfaces to 6H-SiC substrates - technology and simulationRang, Toomas; Blum, AlfonsProceedings of the Estonian Academy of Sciences. Engineering1997 / 4, p. 250-259: ill

Interpretation of some physical parameters of SiC Schottky interfaces manufactured by diffusion welding technologyRang, Toomas; Korolkov, Oleg; Ljutov, JevgeniProceedings of the Estonian Academy of Sciences. Engineering2004 / 3, p. 179-184

Investigation of additional states in the silicon carbide surface after diffusion weldingMizsei, Janos; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasICSCRM2011 : Cleveland Ohio, USA, September 11-16, 2011 : abstracts2011 / p. 356 : ill

Investigation of barrier inhomogeneities and electronic transport on Al-Foil/p-Type-4H-SiCSchottky barrier Diodes using diffusion weldingZiko, Mehadi Hasan; Koel, Ants; Rang, Toomas; Rashid, Muhammad HaroonCrystals2020 / p. 636-647 https://doi.org/10.3390/cryst10080636 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

Investigation of deep level centers in i- and n-layers of GaAs pin-diodesToompuu, Jana; Korolkov, Oleg; Sleptšuk, Natalja; Rang, ToomasBEC 2014 : 2014 14th Biennial Baltic Electronics Conference : proceedings of the 14th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 6-8, 2014, Tallinn, Estonia2014 / p. 25-28 : ill

Investigation of electrical characteristics of SiC based complementary JBS structuresKurel, Raido2005 https://www.ester.ee/record=b2053292*est

Investigation of p-i-n GaAs structures by DLTS methodToompuu, Jana; Korolkov, Oleg; Sleptšuk, Natalja; Rang, ToomasElektronika ir elektrotechnika = Electronics and electrical engineering2010 / 4, p. 51-54 : ill

Investigation of subcontact layers in SiC after diffusion weldingKorolkov, Oleg; Kuznetsova, Natalja; Sitnikova, A.; Viljus, Mart; Rang, ToomasSilicon carbide and related materials 20072009 / p. 647-650

Investigation of subcontact layers in SiC after diffusion weldingKorolkov, Oleg; Kuznetsova, Natalja; Sitnikova, A.; Viljus, Mart; Rang, ToomasSilicon carbide and related materials2007 / p. 100 https://www.scientific.net/MSF.600-603.647

Investigation of the combined stress and strain situation in diffusion welded rectifying elementsKorolkov, Oleg; Rang, Toomas; Kurel, RaidoSurface treatment VI2003 / p. 307-316 https://www.witpress.com/elibrary/wit-transactions-on-engineering-sciences/39/1441

Investigation of the graphene-on-silicon-carbide and CVD graphene as a basis for bioimpedance sensor applications : posterSleptšuk, Natalja; Land, Raul; Toompuu, Jana; Lebedev, Alexander A.; Davydov, Valery; Eliseyev, Ilya; Kalinina, Evgenia; Korolkov, Oleg; Rang, ToomasePosters2018 / 1 p.: ill https://cdn.technologynetworks.com/ep/pdfs/natalja-sleptsuk-a-raul-land-a-jana-toompuu-a-alexander-lebedev-b-valery-davydov-b-ilya-eliseyev-b.pdf

Investigation of the intermediate layer in the metal-silicon carbide contact obtained by diffusion welding = Difusioonkeevitusega valmistatud metalli ja ränikarbiidi vahelise üleminekuala vahekihi uurimineSleptšuk, Natalja2011 https://www.ester.ee/record=b2692547*est

Ja nii nad tapsidki Ferdinandi... : [muutustest ülikoolides, ka TTÜs]Rang, ToomasMente et Manu2008 / 16. apr., lk. 2, 4 : portr. ; 30. apr., lk. 2 ; 16. mai, lk. 2 ; 30. mai, lk. 2 https://www.ester.ee/record=b1242496*est

Joint optimization via deep reinforcement learning in wireless networked controlled systemsAshraf, Kanwal; Le Moullec, Yannick; Pardy, Tamas; Rang, ToomasIEEE Access2022 / p. 67152-67167 https://doi.org/10.1109/ACCESS.2022.3185244 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

Kalman Tarnay (1929 - 1998)Rang, ToomasThe 7th Biennial Conference on Electronics and Microsystem Technology "Baltic Electronics Conference" : BEC 2000 : October 8 - 11, 2000, Tallinn, Estonia : conference proceedings2000 / p. V : portr

Kas ilma elektroonikata on elu Eestis võimalik?Rang, ToomasIV Välis-Eesti kongress, 29.-30. juunil 1999. a. Tallinnas : ettekannete kokkuvõtted1999 / lk. 106-108

Kolledžis elektroonika õppekaval roheline tee : [Maret Panga ja Toomas Rangi kommentaaridega]Aavik, Svea; Pank, Maret; Rang, ToomasMeie Maa2003 / 30. apr., lk. 1

Kuhu lähed, Tehnikaülikool? : [TTÜ koht Eestis, tegevuse eesmärgid, tegevusvaldkonnad, ressursid, õppekavad, õppejõud ja üliõpilased, koostöö jm.]Rang, ToomasTehnikaülikool1999 / 29. apr., lk. 5-8

Laia keelutsooniga pooljuhtmaterjalidel põhinevad pooljuhtseadisedRang, Toomas; Rang, GalinaTeadusmõte Eestis (X). Tehnikateadused. 3 : [artiklikogumik]2019 / lk. 169-176 : ill., fot https://www.ester.ee/record=b5208765*est

Large area 4H-SiC power Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailProceedings of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany2000 / p. 890-893

Large area 4H-SiC power Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailAbstracts of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany2000 / p. 303-304

Large area 6H-SiC Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailProceedings of the Estonian Academy of Sciences. Engineering2000 / 2, p. 155-159 : ill https://artiklid.elnet.ee/record=b1004045*est

Large area high quality interfaces to SiC substrates - technology and modellingRang, Toomas; Korolkov, Oleg; Kurel, Raido; Pikkov, MihhailMaterials mechanics, fracture mechanics, micro mechanics1999 / p. 574-579: ill

Life-time characterization of LEDsPaisnik, Kristo; Rang, Galina; Rang, ToomasEstonian journal of engineering2011 / 3, p. 241-251 : ill

Low noise LDO architecture with consideration for low voltage operationMihhailov, Juri; Strik, Viktor; Strik, Sergei; Rang, ToomasBEC 2014 : 2014 14th Biennial Baltic Electronics Conference : proceedings of the 14th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 6-8, 2014, Tallinn, Estonia2014 / p. 41-44 : ill

Low power CMOS current source for shortened square wave signalsKasemaa, Argo; Rang, ToomasBEC 2010 : 2010 12th Biennial Baltic Electronics Conference : proceedings of the 12th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 4-6, 2010, Tallinn, Estonia2010 / p. 89-92 : ill

Low-cost, portable dual-channel pressure pump for droplet microfluidicsJõemaa, Rauno; Grosberg, Martin; Rang, Toomas; Pardy, Tamas2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO), 23-27 May 2022, Opatija, Croatia : proceedings2022 / p. 205-211 : ill https://doi.org/10.23919/MIPRO55190.2022.9803371

Low-temperature annealing of lightly doped n-4H-SiC layers after irradiation with fast electronsKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSemiconductors2019 / p. 975−978 https://doi.org/10.1134/S1063782619070133 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

LPE technology for power GaAs diode structuresVoitovitš, Viktor; Rang, Toomas; Rang, GalinaEstonian journal of engineering2010 / 1, p. 11-22 : ill

Lugupeetud TÜ rektor prof. J. Aaviksoo : pöördumineUibu, Jaak; Roosimaa, Toivo; Einasto, R.; Vooglaid, Ülo; Tõnstein, A.; Naelapea, A. E.; Rang, Toomas; Koslov, VladimirSirp2000 / 20. apr., lk. 20

Maaelektriku teatmik1975 https://www.ester.ee/record=b1304264*est

Majanduskomisjon 2010–2016Rang, ToomasUuele kvaliteedile ja väärikale positsioonile : Tallinna Tehnikaülikool 2000-20152018 / lk. 248-263 http://www.ester.ee/record=b4775778*est https://digi.lib.ttu.ee/i/?10910

Materials and contact characterisation VIII2017 https://www.witpress.com/books/978-1-78466-197-7

Metallization technologies for wide band-gap semiconductor substrates : (invited paper)Rang, Toomas; Korolkov, Oleg; Pikkov, MihhailProceedings of the 6th Nexuspan Workshop Microsystems Technology Activities in Baltic Region : 23-24 April, 1999, Vilnius, Lithuania1999 / p. 27-30

Method of samples preparation intended for research of deep centers in i-, n-, and p-layers of GaAs p+-pin-n+ structures and result of analysisToompuu, Jana; Sleptšuk, Natalja; Korolkov, Oleg; Rang, ToomasBEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia2016 / p. 35-38 : ill http://www.ester.ee/record=b2150914*est

Microheating solution for molecular diagnostics devices = Mikrosoojendamine molekulaardiagnostika seadistesPardy, Tamas2018 https://digi.lib.ttu.ee/i/?9249

Mille poolest erineb TTÜ... : [intervjuu Toomas Rangiga]Rang, ToomasAvaja2003 / 18. dets., lk. 2 : fot

Model-based system architecture for event-triggered wireless control of bio-analytical devicesAshraf, Kanwal; Le Moullec, Yannick; Pardy, Tamas; Rang, Toomas2021 24th Euromicro Conference on Digital System Design (DSD), 01-03 September 20212021 / p. 465–471 : ill https://doi.org/10.1109/DSD53832.2021.00076

Modeling and simulations of 4H-SiC/6H-SiC/4H-SiC single quantum-well light emitting diode using diffusion bonding techniqueRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasMicromachines2021 / art. 1499 https://doi.org/10.3390/mi12121499 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

Modeling in semiconductor electronicsJavor, A.; Rang, Toomas; Szekely, V.; Tarnay, K.; Velmre, Enn1993 https://www.ester.ee/record=b1031052*est

Modeling in semiconductor electronicsVelmre, Enn; Rang, ToomasBEC : Baltic Electronics Conference : proceedings of the 4th Biennial Conference, October 9-14, 1994, Tallinn (Estonia). 21994 / p. 501-516: ill

Modelling and experimental characterisation of self-regulating resistive heating elements for disposable medical diagnostics devicesPardy, Tamas; Rang, Toomas; Tulp, IndrekMaterials characterization VII2015 / p. 263-271 : ill

Modelling and experimental characterisation of thermoelectric heating for molecular diagnostics devicesPardy, Tamas; Rang, Toomas; Tulp, IndrekBEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia2016 / p. 27-30 : ill http://www.ester.ee/record=b2150914*est

Modelling of inhomogeneities of SiC Schottky interfacesRang, ToomasSoftware for Electrical Engineering Analysis and Design V : [Fifth International Conference ... : Electrosoft V]2001 / p. 3-15 : ill

Modelling of metal alloy contacts to semiconductor substrateRang, ToomasSimulation and design of microsystems and microstructures1995 / p. 251-258: ill

Modelling of the tunneling current in metal alloy contacts to 6H- and 4H-SiC substratesRang, ToomasMICROSIM II : simulation and design of microsystems and microstructures1997 / p. 23-31 : ill

Nano- and Micro-Scale simulations of Ge/3C-SiC and Ge/4H-SiC NN-heterojunction diodesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 20192020 / p. 490-496 https://doi.org/10.4028/www.scientific.net/MSF.1004.490 Conference proceedings at Scopus Article at Scopus

Nano and micro-scale simulations of Si/4H-SiC and Si/3C-SiC NN-heterojunction diodesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon Carbide and Related Materials 2018 : 12thEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK2019 / p. 357–361 https://doi.org/10.4028/www.scientific.net/MSF.963.357 Conference proceeding at Scopus Article at Scopus

Nanoscale and microscale simulations of N-N junction heterostructures of 3C-4H silicon carbideRashid, Muhammad Haroon; Koel, Ants; Rang, Toomas; Gähwiler, Reto; Grosberg, Martin; Jõemaa, RaunoMaterials and contact characterisation VIII2017 / p. 235-248 : ill http://dx.doi.org/10.2495/MC170241

New interdisciplinary master program in communicative electronics at Tallinn University of TechnologyRang, Toomas; Sleptšuk, Natalja5th International Conference on Interdisciplinarity in Education ICIE'10 : New Higher Education Programs, June 17-19, 2010, Tallinn, Estonia : proceedings2010 / p. 187-190 : ill

Non-destructive eddy current measurments for silicon carbide heterostructure analysisSahakyan, Armen; Koel, Ants; Rang, ToomasMaterials and contact characterisation VIII2017 / p. 49-60 : ill http://dx.doi.org/10.2495/MC170061

Numerical analysis of the influence of deep energy level traps in SiC Schottky structuresKoel, Ants; Rang, Toomas; Rang, GalinaHigh performance structure and materials. VI2012 / p. 439-448 : ill

Numerical simulation of P-type Al/4H-SiC Schottky barrier diodes [Online resource]Ziko, Mehadi Hasan; Koel, Ants; Rang, ToomasBEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 20182018 / 4 p.: ill https://doi.org/10.1109/BEC.2018.8600976

Numerical simulations for reverse recovery process investigations of LPE GaAs power diodesKoel, Ants; Rang, Toomas; Voitovitš, Viktor; Toompuu, JanaBEC 2012 : 2012 13th Biennial Baltic Electronics Conference : proceedings of the 13th Biennial Baltic Electronics Conference : October 3-5, 2012, Tallinn, Estonia2012 / p. 39-42 : ill

Numerical study of current crowding phenomenon in complementary 4H-SiC JBS rectifiersRang, Toomas; Higelin, G.; Kurel, RaidoSilicon Carbide and Related Materials 20032004 / p. 1045-1048 https://www.scientific.net/MSF.457-460.1045

Numerical study of turn-off phenomenon in complementary 4H-SiC JBS rectifiersRang, Toomas; Kurel, Raido; Higelin, G.BEC 2004 : proceedings of the 9th Biennial Baltic Electronics Conference : October 3-6, 2004, Tallinn, Estonia2004 / p. 47-50 : ill

Numerical two-carrier simulation of the M-S (Schottky) structuresRang, ToomasResearch report : System Theory Laboratory of Electrical Engineering, University of the Saarland1985 / s. 62

Näidisülesanded. Test : abimaterjal ainele "Mikroelektroonika"2003 http://www.ester.ee/record=b1766976*est

Odavaid LEDe tasub vältida : [TTÜ Thomas Johann Seebecki elektroonikainstituudis võeti luubi alla valgusdioodide ehk LEDide karakteristikud, tulemusi tutvustab instituudi direktor professor Toomas Rang]Rang, Toomas; Aru, ErikMente et Manu2012 / lk. 8 : fot https://www.ester.ee/record=b1242496*est

One-dimensional numerical simulation of complementary power Schottky structuresRang, ToomasIEE proceedings. Part I Solid-state and electron devices1985 / p. 253-256

Open source hardware cost-effective imaging sensors for high-throughput droplet microfluidic systemsPärnamets, Kaiser; Koel, Ants; Pardy, Tamas; Rang, ToomasProceedings of 26th International Conference : ELECTRONICS 20222022 / 6 p https://doi.org/10.1109/IEEECONF55059.2022.9810383

Optical detection methods for high-throughput fluorescent droplet microflow cytometryPärnamets, Kaiser; Pardy, Tamas; Koel, Ants; Rang, Toomas; Scheler, Ott; Le Moullec, Yannick; Afrin, FarihaMicromachines2021 / art. 345, 20 p. : ill https://doi.org/10.3390/mi12030345 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

Optical dynamics of copper-doped cadmium sulfide (CdS) and zinc sulfide (ZnS) quantum-dots core/shell nanocrystalsRashid, Muhammad Haroon; Koel, Ants; Rang, Toomas; Nasir, Nadeem; Sabir, Nadeem; Ameen, Faheem; Rasheed, AbherNanomaterials2022 / art. 2277 https://doi.org/10.3390/nano12132277 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

Panus eilsele teeb homme töötuksRang, ToomasLuup1999 / 9, lk. 24-26 https://artiklid.elnet.ee/record=b2091983*est

A parametric framework for modelling of bioelectrical signals = Parameetriline raamistik bioelektriliste signaalide modelleerimiseksMuhammad, Yar2015 http://www.ester.ee/record=b4473232*est

A parametric framework for the development of bioelectrical applications : application to a bio-impedance signal simulatorMuhammad, Yar; Annus, Paul; Le Moullec, Yannick; Rang, ToomasProceedings of the Estonian Academy of Sciences2016 / p. 345-357 : ill https://doi.org/10.3176/proc.2016.4.03

Parametric simulation of SiC Schottky JBC structuresRang, Toomas; Kurel, RaidoComputer methods and experimental measurements for surface effects and contact mechanics VIII2007 / p. 315-334 https://www.witpress.com/Secure/elibrary/papers/SECM07/SECM07030FU1.pdf

Phenol and methanol detector based on pristine graphene nano-sheet: a first principles study [Online resource]Rashid, Muhammad Haroon; Koel, Ants; Rang, ToomasBEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 20182018 / 4 p.: ill https://doi.org/10.1109/BEC.2018.8600982

Physics related modeling of power LEDsPaisnik, Kristo; Poppe, Andras; Rang, Toomas; Rang, GalinaBEC 2012 : 2012 13th Biennial Baltic Electronics Conference : proceedings of the 13th Biennial Baltic Electronics Conference : October 3-5, 2012, Tallinn, Estonia2012 / p. 57-60 : ill

PID controller tuning optimization using genetic algorithm for droplet size control in microfluidicsGyimah, Nafisat; Jõemaa, Rauno; Pärnamets, Kaiser; Scheler, Ott; Rang, Toomas; Pardy, Tamas2022 18th Biennial Baltic Electronics Conference (BEC)2022 / 6 p https://doi.org/10.1109/BEC56180.2022.9935596

Plaan 3000PlussRang, ToomasMente et Manu2010 / lk. 3 : fot https://artiklid.elnet.ee/record=b2286893*est

Poleemiline järelsõnaRang, ToomasMente et Manu2004 / 30. märts, lk. 2 https://www.ester.ee/record=b1242496*est

Polymer nanofiber deposition in lab-on-a-chip devices by electrospinningPardy, Tamas; Jõemaa, Rauno; Ender, Ferenc; Rang, Toomas; Hegedus, Kristof; Balogh-Weiser, Diana2020 17th Biennial Baltic electronics conference, Tallinn, Estonia, October 6-8, 2020 : proceedings2020 / 4 p. : ill https://doi.org/10.1109/BEC49624.2020.9277494

Polytypic heterojunctions for wide bandgap semiconductor materialsShenkin, Mikhail; Korolkov, Oleg; Rang, Toomas; Rang, GalinaMaterials characterization VII2015 / p. 273-282 : ill

Pooljuhtstruktuuride tööpõhimõtted. Struktuuride realisatsioonid kristallis : abimaterjal ainele "Mikroelektroonika"2003 http://www.ester.ee/record=b1782563*est

Power Stage MOSFETs Segmentation in Ripple Controlled Step-Down SMPS [Online resource]Mihhailov, Juri; Koort, Marko; Rang, ToomasBEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 20182018 / 4 p. : ill https://doi.org/10.1109/BEC.2018.8600960

Precision engineering and mechatronics trends in EstoniaAjaots, Maido; Rang, Toomas; Tamre, MartNordDesign'96 : 28.-30.8.1996, Helsinki University of Technology, Espoo, Finland : proceedings1996 / p. 289-296: ill

Preliminary investigation of diffusion welded contacts to p-type 6H-SiCKorolkov, Oleg; Rang, Toomas; Kuznetsova, Natalja; Ruut, JanaBEC 2002 : proceedings of the 8th Biennial Baltic Electronics Conference : October 6-9, 2002, Tallinn, Estonia2002 / p. 55-56 : ill

Principles of semiconductor structures. Realisation of structures in crystals : supplementary lecture material in the subject "Microelectronics"Rang, Toomas2003 http://www.ester.ee/record=b1782565*est

Process development for 3D laser lithographyKaste, N.; Filbert, A.; Mescheder, U.; Rang, Toomas; Rang, GalinaHigh performance and optimum design of structures and materials2014 / p. 139-150 : ill

Processing unit for alcohol sensorKasemaa, Argo; Rang, ToomasProceedings of the Conference Electronics'98, 19-20 May 1998, Kaunas, Lithuania1998 / p. 22-23

Product and manufacturing in electronics : supplementary material in the subject "Technologies of electronic circuits"Rang, Toomas2003 https://www.ester.ee/record=b1766953*est

Pungi-, roki- või diskotaat : [Riho Baumannist tema enda, Olavi Pihlamäe ja Toomas Rangi kommentaaridega]Rebane, Selene-Rete; Pihlamägi, Olavi; Rang, ToomasÜliõpilasleht2003 / lk. 2 : ill

Pöördumine Haridus- ja Teadusministri ning Riigikogu kultuurikomisjoni esimehe poole : [doktorikoolide probleemist]Arro, Ilmar; Kaljurand, Mihkel; Kallavus, Urve; Kübarsepp, Jakob; Lille, Ülo; Lopp, Margus; Mellikov, Enn; Min, Mart; Rang, Toomas; Rüstern, Ennu; Taklaja, Andres; Tamm, Toomas; Tammet, Tanel; Tepandi, Jaak; Ubar, Raimund-Johannes; Öpik, AndresMente et Manu2005 / 18. mai. lk. 1 https://www.ester.ee/record=b1242496*est

Pöördumine Haridus- ja Teadusministri ning Riigikogu kultuurikomisjoni esimehe poole : [doktorikoolide probleemist]Arro, Ilmar; Kaljurand, Mihkel; Kallavus, Urve; Kübarsepp, Jakob; Lille, Ülo; Lopp, Margus; Mellikov, Enn; Min, Mart; Rang, Toomas; Rüstern, Ennu; Taklaja, Andres; Tamm, Toomas; Tammet, Tanel; Tepandi, Jaak; Ubar, Raimund-Johannes; Öpik, AndresTallinna Tehnikaülikooli aastaraamat 20052006 / lk. 430-431

Rahvusvaheline Seebecki foorum Tallinnas : [20.-24. mail 2013]Rang, ToomasTallinna Tehnikaülikooli aastaraamat 20132014 / lk. 303-304

Relative complex permittivity and its dependence on frequencyGiannoukos, Georgios; Min, Mart; Rang, ToomasWorld journal of engineering2017 / p. 532-537 : ill https://doi.org/10.1108/WJE-01-2017-0007

Ränikarbiidil põhinevate jõupooljuhtseadiste disain ja karakteriseerimineRang, Toomas; Rang, GalinaTeadusmõte Eestis. 4, Tehnikateadused. 22007 / lk. 121-131 : ill

Self-heating phenomenon and current suppressing effect at 6H-SiC Schottky interfacesKurel, Raido; Rang, ToomasProceedings of the 5th NEXUSPAN Workshop on Thermal Aspects in Microsystem Technology, 6-8 May 1998, Budapest, Hungary1998 / p. 88-91

Self-heating phenomenon and current suppressing effect at the SiC Schottky interfacesRang, Toomas; Kurel, RaidoSoftware for electrical engineering analysis and design. IV1999 / p. 153-162: ill

Semiconductor based alcohol sensing elementRang, Toomas; Kasemaa, ArgoProceedings of the 6th Nexuspan Workshop Microsystems Technology Activities in Baltic Region : 23-24 April, 1999, Vilnius, Lithuania1999 / p. 82-84

SiC JBS diode symmetrical voltage doubler represented as the diffusion-welded stackKorolkov, Oleg; Land, Raul; Toompuu, Jana; Sleptšuk, Natalja; Rang, ToomasSilicon carbide and related materials 2017 : ICSCRM 2017 : selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and related materials, September 17-22, 2017, Washington, DC, USA2018 / p. 862–865 : ill https://doi.org/10.4028/www.scientific.net/MSF.924.862 Conference Proceedings at Scopus Article at Scopus

SiC Schottky diode for power convertersPikkov, Mihhail; Rang, ToomasPEDC 2001 : Power Electronics Devices Compatibility : 2nd conference : 3-5 September 2001, Zielona Gora, Poland2001 / p. 156-161 : ill

SiC Schottky diode for use in power convertorsPikkov, Mihhail; Rang, Toomas; Pokatilov, AndreiBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 245-246 : ill

SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSilicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece2017 / p. 697-700 : ill https://doi.org/10.4028/www.scientific.net/MSF.897.697

SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, Toomas11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]2016 / p. 42

SiC и GaAs диоды в устройствах силовой электроникиBlinov, Andrei; Vinnikov, Dmitri; Rang, ToomasТехнiчна електродинамiка : тематичний випуск : силова електрониiка та енергоефективнiсть2012 / с. 42-46 : ил

Silicon carbide - new challenge for power semiconductor devicesRang, Toomas; Rang, Galina2nd International Symposium "Topical Problems of Education in the Field of Electrical and Power Engineering" : Kuressaare, Estonia, January 17-22, 20052005 / p. 36-42 : ill

Silicon integrated circuit fabrication process modeling and simulationRang, Toomas; Tarnay, K.; Mizsei, JanosPeriodica polytechnica. Electrical engineering = Электротехника1980 / p. 109-113 https://www.ester.ee/record=b1198855*est

Silicon planar technology process modelingRang, Toomas; Tarnay, K.; Masszi, F.Test methods in electronics technology : third International Spring Seminar on Electronics Technology, May 15-18, 1979, Balatonfüred, Hungary1979 / p. 110-120

Simple relationship between the breakdown voltage, concentration and junction depth pn diffused junctionsRang, ToomasPhysica status solidi. A, Applied research1982 / p. K117-K119 : tab., joon https://www.ester.ee/record=b1562026*est

Simulation of deep energy traps to explain the VAC temperature dependence anomaly of diffusion welded Schottky contactsKoel, Ants; Rang, Toomas; Rang, GalinaICSCRM2011 : Cleveland Ohio, USA, September 11-16, 2011 : abstracts2011 / p. 340 : ill

Simulations of benzene and hydrogen-sulfide gas detector based on single-walled carbon nanotube over intrinsic 4H-SiC substrateRashid, Muhammad Haroon; Koel, Ants; Rang, Toomas; Ziko, Mehadi HasanMicromachines2020 / art. 453, 13 p. : ill https://doi.org/10.3390/mi11050453 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

Simulations of graphene nanoribbon field effect transistor for the detection of propane and butane gases : a first principles studyRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasNanomaterials2020 / art. 98 https://doi.org/10.3390/nano10010098 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

Simulations of heterostructures based on 3C-4H and 6H-4H silicon carbide polytypesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon carbide and related materials 2017 : ICSCRM 2017 : selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and related materials, September 17-22, 2017, Washington, DC, USA2018 / p. 302-305 : ill https://doi.org/10.4028/www.scientific.net/MSF.924.302 Conference Proceedings at Scopus Article at Scopus

Simulations of propane and butane gas sensor based on pristine armchair graphene nanoribbonRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasIOP conference series : materials science and engineering2018 / art. 012001, 8 p https://doi.org/10.1088/1757-899X/362/1/012001 Conference proceedings at Scopus Article at Scopus Article at WOS

A smart capless voltage regulator for very high bandwidth A/D and D/A converters in a standard 28nm CMOS processKampus, Vahur; Rang, ToomasBEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia2016 / p. 43-46 : ill http://www.ester.ee/record=b2150914*est

Some comparative properties of diffusion-welded contacts to 6H and 4H silicon carbideKorolkov, Oleg; Rang, ToomasSilicon Carbide and Related Materials 2001 : ICSCRM2001 : proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28 - November 2, 2001. Part 22002 / p. 941-944 : ill

Some of comparative properties of diffusion welded contacts to 6H- and 4H-silicon carbideKorolkov, Oleg; Rang, ToomasInternational Conference on Silicon Carbide and Related Materials 2001 - ICSCRM2001 - October 28-November 2, 2001 (Epochal Tsukuba, Ibaraki, Japan) : technical digest2001 / p. 625-626 : ill

Szilicium planar technologiai eljaras szamitögepes stimulaciojaRang, Toomas; Tarnay, K.; Masszi, F.Finommechanika, mikrotechnika: az Optikai, Akusztikai és Filmtechnikai Egyesület, a Híradástechnikai Tudományos Egyesület és a Méréstechnikai és Automatizálási Tudományos Egyesület lapja1979 / p. 257-260

Static and dynamic behavior of the SiC complementary JBS structuresKurel, Raido; Rang, ToomasBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 59-62 : ill

Status quo in Estonian electronics industry?Rang, Toomas; Tamm, UljasBEC : Baltic Electronics Conference : proceedings of the 4th Biennial Conference, October 9-14, 1994, Tallinn (Estonia). 21994 / p. 585-591: ill

Steady state analysis of the commutating LC filter based dual active bridge for the isolation stage of power electronic transformer [Electronic resource]Beldjajev, Viktor; Rang, Toomas; Zakis, JanisCPE 2013 : 2013 International Conference on Compatibility and Power Electronics (CPE) : June 5-7, 2013, Ljubljana, Slovenia : conference proceedings2013 / p. 138-143 : ill [CD-ROM]

Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probeMizsei, Janos; Korolkov, Oleg; Toompuu, Jana; Rang, ToomasThe 9th European Conference on Silicon Carbide and Related Materials : abstract book : St. Petersburg Russia, 2-6 September, 20122012 / 2 p. : ill

Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probeMizsei, Janos; Korolkov, Oleg; Toompuu, Jana; Mikli, Valdek; Rang, ToomasSilicon Carbide and Related Materials 2012 : selected peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation2013 / p. 677-680 : ill

Subcontact layers in LPE structures for forming the ohmic contacts on GaAs semiconductor substratesKorolkov, Oleg; Voitovitš, Viktor; Rang, ToomasAbstract book of 13th American Conference on Crystal Growth and Epitaxy : August 12-16, 2001, Burlington, Vermont, USA2001 / p. 133

Sulle, abiturient! : Üliõpilaste vastuvõtt 1991. aRang, ToomasTehnikaülikool1991 / 25. apr., lk. 1-2

Tallinna Tehnikaülikool ja Elcoteq Tallinn AS elektroonikainseneride ettevalmistuse ühisrindelRang, ToomasElektroonika 2000 : VII rahvusvahelise telekommunikatsioonipäeva konverentsi ettekannete materjalid2000 / lk. 19-20

Tartu diooditegija trügib ainulaadse tehnoloogiaga maailmaturule : [firma Clifton nõukogu liikme Toomas Rangi kommentaariga]Paris, Krister; Aru, Erik; Rang, ToomasPõhjarannik2005 / 23. märts, Ärileht, lk. 3

Tehnikateadused. ElektrotehnikaRang, ToomasEesti entsüklopeedia. 11, Eesti üld2002 / lk. 500

Tehnikaülikool võitis EL hanke eurode tuvastamiseks : [intervjuu TTÜ elektroonikainstituudi direktori Toomas Rangiga ja professor Mart Min'iga]Rang, Toomas; Ummelas, Mart; Min, MartMente et Manu2008 / 30. jaan., lk. 3 https://artiklid.elnet.ee/record=b1118469*est

Tehnikaülikooli rektori järjekordsed valimised, ehk, Kuidas paistavad järgmise rektori ülesanded "altpoolt" vaadatunaRang, ToomasTehnikaülikool1999 / 22. nov., lk. 4-7: portr

Temperature effects in alloy metal and 6H-SiC substrate Schottky contacts caused by the current suppressing effectRang, Toomas; Blum, AlfonsProceedings of the International Conference and Exhibition Micro Materials : MicroMat '97, April 16-18, 1997, Berlin, Germany1997 / p. 591-596

Temperature influence on current suppressing effect in SiC Schottky diodeKurel, Raido; Rang, ToomasProceedings of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany2000 / p. 1208-1209

Temperature influence on current suppressing effect in SiC Schottky diodeKurel, Raido; Rang, ToomasAbstracts of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany2000 / p. 217-218

The 7th Biennial Conference on Electronics and Microsystem Technology "Baltic Electronics Conference" : BEC 2000 : October 8 - 11, 2000, Tallinn, Estonia : conference proceedingsRang, Toomas2000

The basic parameters of diffusion welded Al Schottky contacts to p- and n-SiCKorolkov, Oleg; Ruut, Jana; Kuznetsova, Natalja; Rang, ToomasSilicon Carbide and Related Materials 20032004 / p. 857-860 https://doi.org/10.4028/www.scientific.net/MSF.457-460.857

The basic Schottky parameters for combined diffusion welded and sputter metal contactsKuznetsova, Natalja; Korolkov, Oleg; Rang, Toomas; Pikkov, MihhailBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 47-50 : ill

The d.c. modeling of I²L with the non-linear circuit analysis program TRANZ-TRANRang, ToomasPeriodica polytechnica. Electrical engineering = Электротехника1981 / p. 103-114 : joon https://www.ester.ee/record=b1198855*est https://pp.bme.hu/ee/article/view/4771/3876

The dependence of reverse recovery time on barrier capacitance and series on-resistance in Schottky diodesVeher, Oleksandr; Sleptšuk, Natalja; Toompuu, Jana; Korolkov, Oleg; Rang, ToomasMaterials and contact characterisation VIII2017 / p. 15-22 : ill http://dx.doi.org/10.2495/MC170021

The diffusion welded contacts in power electronicsKorolkov, Oleg; Rang, ToomasBEC : Baltic Electronics Conference : proceedings of the 4th Biennial Conference, October 9-14, 1994, Tallinn (Estonia). 21994 / p. 573-578: ill

The electrotechnical and electronics industryRang, ToomasTechnology policy for improving competitiveness of Estonian industries1996 / p. 60-65

The measurement and tuning of SiC diode voltage doubler represented as diffusion-welded stack [Online resource]Toompuu, Jana; Sleptšuk, Natalja; Land, Raul; Korolkov, Oleg; Rang, ToomasBEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 20182018 / 4 p.: ill https://doi.org/10.1109/BEC.2018.8600963

The permeable base transistorKoel, Ants; Nilsson, H.H.; Masszi, F.; Rang, ToomasBEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedings1998 / p. 287-290: ill

The Schottky parameter test for combined diffusion welded and sputter large area contactsKorolkov, Oleg; Kuznetsova, Natalja; Rang, Toomas; Syrkin, A.; Dmitriev, V.Silicon carbide and related materials2007 / p. 737-740 https://www.scientific.net/MSF.556-557.737

The specificity of solid-phase interaction of aluminium with silicon carbide in the manufacture of diffusion-welded contacts to semiconductor devicesSleptšuk, Natalja; Korolkov, Oleg; Toompuu, Jana; Rang, Toomas; Mikli, ValdekElektronika ir elektrotechnika = Electronics and electrical engineering2012 / p. 45-48 : ill https://eejournal.ktu.lt/index.php/elt/article/view/2610

Thermal analysis of a disposable, instrument-free DNA amplification lab-on-a-chip platformPardy, Tamas; Rang, Toomas; Tulp, IndrekSensors2018 / art. 1812, 13 p. : ill https://doi.org/10.3390/s18061812 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Artice at WOS

Toode ja tootmine elektroonikas : abimaterjal ainele "Elektroonikaskeemide tehnoloogiad"2003 http://www.ester.ee/record=b1766950*est

TRANZ-TRAN : mittelineaarsete skeemide analüüsi programm : kasutusjuhend1983 https://www.ester.ee/record=b1255945*est

TRANZ-TRAN mittelineaarsete skeemide analüüsi programm : kasutusjuhend1986 https://www.ester.ee/record=b1205915*est

TRANZ-TRAN mittelineaarsete skeemide analüüsi programm : mudelite kirjeldus ja parameetrite määramine1986 https://www.ester.ee/record=b1205916*est

Tunne kolleegi. Enn Velmre : [intervjuu Enn Velmrega]Velmre, Enn; Rang, Toomas; Haldre, Eero; Oras, Anne; Min, MartAvaja2003 / lk. 3 : fot

Two dimensional modeling of the shunted emitter area for power shepistorsRang, Toomas; Saul, IndrekModeling, Simulation and Control1989 / p. 29-39

Two dimensional modelling of alloy metal Schottky contacts to 6H-SiC substrateRang, Toomas; Blum, AlfonsProceedings of the ELECTROSOFT 96, May 28-30, San-Miniato, Italy1996 / p. 347-356

Vaimust, võimust, traditsioonidest ja internetipõhisest õppest: oma mõtteid ja laenatud tarkustRang, ToomasMente et Manu2004 / 27. jaan., 10. veebr., 20. veebr., 9. märts, lk. 2 https://artiklid.elnet.ee/record=b1341909*est

Vanamoodi enam ei saa, uutmoodi veel ei oskaRang, ToomasProfit2005 / 4, lk. 22 : portr

Võta või jäta!Rang, ToomasMente et Manu2010 / lk. 2 : fot. ; 12. veebr., lk. 3 : fot https://www.ester.ee/record=b1242496*est

Väikesed interpretatsioonid pärastlõunaksRang, ToomasA & A2004 / 3, lk. 4-6 https://artiklid.elnet.ee/record=b1015743*est

Ökonoomsete negatiivse diferentsiaaltakistusega astmete ja elementide disainimine ja optimeerimineTaniloo, Rainer2005 https://www.ester.ee/record=b2073482*est

Überblick der Situation in der Deutschen Elektronik- und InformatikindustrieRang, ToomasAutomation, simulation & measurement : ASM'91 : 3rd biennal conference, Tallinn, October 7-11, 1991. Section S / Tallinn Technical University1992 / S. 11-25: Ill

Ülikool ootab ettevõtlikust, efektiivsust ja edukustRang, ToomasMente et Manu2015 / lk. 8-9 : fot

Ülikool vajab jõulist juhtimist : intervjuu TTÜ elektroonikainstituudi direktori professor Toomas RangigaRang, ToomasMente et Manu2010 / lk. 1, 3 : fot

Аналитико-численная модель для исследования стационарного непроводящего состояния силовых тиристоровVelmre, Enn; Rang, ToomasРасчет и проектирование измерительных преобразователей1983 / с. 57-67

Зависимость подвижности электронов и дырок от температуры и концентрации примеси в кремнииRang, Toomas; Velmre, EnnАнализ и моделирование технических устройств и систем АСУТП1977 / с. 115-120

Инженерное обеспечение САПР элементов РЭАRang, ToomasЧисленные методы и средства проектирования и испытания элементов РЭА : тезисы докладов. Том 11987 / с. 13-23 : ил https://www.ester.ee/record=b1273986*est

К расчету максимального напряжения переключения p-n-p-n-структурыVelmre, Enn; Rang, ToomasАнализ и моделирование технических устройств и систем АСУТП1977 / с. 121-126

Компараторы с обратной связьюGallai, S.; Rang, ToomasМашинное проектирование электронных устройств и систем1988 / с. 92-104

Комплексный подход к системам проектирования элементов полупроводниковой и интегральной электроникиRang, ToomasМашинное проектирование электронных устройств и систем1988 / с. 149-165

Коэффициенное ударное ионизацеи носителей заряда в  арсениде галлияRang, Toomas; Puusepp, MärtЭлектронная техника. Серия 2, Полупроводниковые приборы : научно-технический сборник1987 / с. 98-100 https://www.ester.ee/record=b2160501*est

Критические параметры эквивалентных моделей полупроводниковых приборовRang, ToomasМоделирование и управление в системах технической кибернетики1987 / с. 72-76

Лавинное размножение носителей в кремниевых арсенид-галлиевых и фосфидиндиевых дополнительных PN-переходахRang, Toomas; Velmre, EnnРасчет и проектирование систем технической кибернетики1984 / с. 3-13

Машинное моделирование цепи питания, обеспечивающей инжекторный ток для И²Л схемRang, ToomasРасчет и проектирование приборов, устройств и систем технической кибернетики1981 / с. 15-19

Моделирование концентрации носителей заряда в полупроводникахRang, ToomasИсследования по прикладной квантовой электронике1987 / с. 26-36

Моделирование логических элементов для программы нелинейного анализа съем ТРАНЗ-ТРАНHaabu,T.; Rang, ToomasXXVIII студенческая научно-техническая конференция вузов Белоруссии, Молдавии, Эстонии, Латвии, Литвы, 3-5 апр. 1984. Ч. 1, Общественные науки, физико-математические науки, химия, приборостроение, радиотехника и электроника, робототехника и гибкие автоматизированные производства : тезисы докладов1984 / с.28 https://www.ester.ee/record=b3913283*est

Моделирование подвижностей носителей. 1, Рассеивание на акустических фононах и на нейтральной и ионизированной примесиRang, ToomasАнализ и синтез сложных систем и цепей с помощью ЭВМ1986 / с. 103-116

Моделирование подвижностей носителей. 2, Рассеивание на носителях и поверхности, эффект насыщения дрейфовой скорости носителейRang, ToomasАнализ и синтез сложных систем и цепей с помощью ЭВМ1986 / с. 117-130

Моделирование технологического процесса кремниевых силовых полупроводниковых приборов на ЭВМRang, Toomas; Velmre, EnnСинтез и диагностика цифровых устройств и систем1982 / с. 107-112

Моделирование транспортных уравнений в полупроводникахRang, ToomasИсследования по прикладной квантовой электронике1987 / с. 37-42

Модель ключа на базе ВТСПRang, Toomas; Koel, AntsTallinna Tehnikaülikooli Toimetised1990 / lk. 109-116: ill

Модель межсоединений/линии передачи на базе ВТСПOrro, S.; Rang, ToomasTallinna Tehnikaülikooli Toimetised1990 / lk. 103-108

Нелинейная зарядовая модель тиристораRang, ToomasИзмерение и моделирование в электронике1987 / с. 94-100

Нелинейная модель тиристора для программы анализа цепейRang, ToomasПроблемы моделирования и измерения в электронике1986 / с. 13-19

Низкотемпературный отжиг слаболегированных слоев n-4H-SiC после облучения быстрыми электронамиKorolkov, Oleg; Kozlovski, Vitali; Lebedev, Alexander; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasФизика и техника полупроводников2019 / с. 991-994 https://doi.org/10.21883/FTP.2019.07.47879.9089

Программа определения параметров "OPTI"Rang, ToomasПроблемы моделирования и измерения в электронике1986 / с. 21-26

РадиотехникаUmborg, Jaak; Hinrikus, Hiie; Meigas, Kalju; Zahharov, Boriss; Taklaja, Andres; Rang, Toomas; Manak, I.S.; Lissenkova, A.M.; Bondarenko, A.N.; Falkova, N.V.; Krusell, Urmas1987 https://www.ester.ee/record=b1273963*est

Расчет туннельного тока в переходах металл - полупроводникRang, ToomasРасчет и проектирование измерительных преобразователей1983 / с. 69-74

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Численное моделирование мощных диодов Шоттки на ЭВМRang, Toomas; Udal, AndresИзвестия высших учебных заведений : международный ежемесячный научно-технический журнал. Радиоэлектроника1983 / с. 92-93 https://www.ester.ee/record=b2768571*est

Численное моделирование технологического процесса изготовления полупроводниковых приборов. Модель диффузииNobel, PeterXXVII студенческая научно-техническая конференция вузов Прибалтийских республик, Белорусской ССР и Молдавской ССР, 19-21 апреля 1983 г. : тезисы докладов. Часть 31983 / с. 14 https://www.ester.ee/record=b1571572*est

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Электротехника и автоматикаLaansoo, Ants; Velmre, Enn; Rang, Toomas; Freidin, Boris; Rubinštein, M.J.; Männama, Vello; Järvalt, Aldur; Bachverk, Aleksander; Rähmi, S.; Tamm, Uljas; Plakk, Mari; Logunov, Gennadi; Tagger, Jüri; Kalm, Evald; Koik, P.; Aarna, Olav1981 https://www.ester.ee/record=b1319172*est

Электротехника и автоматикаKukk, Vello; Voolaine, Andrus; Jõgi, Aksel; Pall, Martin; Ubar, Raimund-Johannes; Kitsnik, Peeter; Toomsalu, Arvo; Grigorjeva, Ksenja; Lohuaru, Tõnu; Evartson, Teet; Božitš, V.I.; Galujev, G.A.; Sudnitsõn, Aleksander; Berkman, Boriss; Rang, Toomas; Velmre, Enn1982 https://www.ester.ee/record=b1328194*est

Электротехника и автоматикаTamm, Uljas; Udal, Andres; Rang, Toomas; Freidin, Boris; Velmre, Enn; Nurste, Ivar; Laansoo, Ants; Männama, Vello; Järvalt, Aldur; Gurjanov, Boris; Pikkov, Otto; Rebane, Jüri; Aarna, Olav; Teder, Toomas1982 https://www.ester.ee/record=b1339926*est

Электротехника и автоматикаLaansoo, Ants; Väljamäe, Gunnar; Tilk, Johan; Uutma, Toomas; Peterson, Jaak; Parve, Toomas; Logunov, Gennadi; Gurjanov, Boris; Gordon, Boris; Rüstern, Ennu; Velmre, Enn; Rang, Toomas; Kõverik, Kait; Järvalt, Aldur; Sildaru, Kalev1983 https://www.ester.ee/record=b1288985*est

Электротехника и автоматикаUbar, Raimund-Johannes; Rang, Toomas; Velmre, Enn; Evartson, Teet; Voolaine, A.; Toome, Tõnis; Viilup, Agu; Sudnitsõn, Aleksander; Berkman, Boriss; Rüstern, Ennu; Leis, Paul; Keevallik, Andres; Kruus, Margus; Jüris, A.1984 https://www.ester.ee/record=b1549179*est

Электротехника и автоматикаKukk, Vello; Tarnay, K.; Szekely, V.; Baji, P.; Farkas, G.; Masszi, F.; Kerecsen-Rencz, M.; Rang, Toomas; Plakk, Paul; Plakk, Peeter; Plakk, T.; Gurjanov, Boris; Männama, Vello; Laansoo, Ants; Pikkov, Otto; Rudski, V.A.; Kõverik, Kait1986 https://www.ester.ee/record=b1296007*est

Электротехника и автоматикаMägi, Harri; Rüstern, Ennu; AArna, Olav; Kiitam, Andres; Land, Raul; Min, Mart; Ronk, Ants; Parve, Toomas; Rang, Toomas; Mahhitko, V.P.; Šendrik, M.G.; Tamm, Boris, inform.1986 https://www.ester.ee/record=b1296468*est

Электротехника и автоматикаLaansoo, Ants; Aarna, Olav; Metsanurm, Margus; Teder, Toomas; Kiitam, Andres; Saks, Eva; Land, Raul; Min, Mart; Remmel, Ülo; Ronk, Ants; Rang, Toomas1987 https://www.ester.ee/record=b1221893*est

Электротехника и автоматикаKukk, Vello; Tamm, Uljas; Pikkov, Otto; Min, Mart; Velmre, Enn; Udal, Andres; Nurste, Ivar; Freidin, Boris; Rang, Toomas; Opotski, Aleksei; Laansoo, Ants; Männama, Vello; Järvalt, Aldur; Gurjanov, Boris; Lavrov, Mihhail; Belkina, I.I.; Plakk, Paul; Plakk, Peeter; Plakk, T.1987 https://www.ester.ee/record=b1224910*est

Электротехника и автоматикаRüstern, Ennu; Keevallik, Andres; Kruus, Margus; Salum, Kaja; Berkman, Boriss; Tammemäe, Kalle; Alango, Villem; Kont, Toomas; Ubar, Raimund-Johannes; Lohuaru, Tõnu; Štraube, B.; Elst, G.; Bombik, B.; Viies, Vladimir; Gallai, S.; Rang, Toomas; Laansoo, Ants; Männama, Vello; Pikkov, Otto; Gurjanov, Boris; Opotski, Aleksei; Velmre, Enn1988 https://www.ester.ee/record=b1256708*est

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